Semiconductor device including an inductor having soft magnetic thin film patterns and a fabricating method of the same

• US 7,923,814 B2
• Filed: 01/23/2007
• Issued: 04/12/2011
• Est. Priority Date: 01/24/2006
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Chung, Chul-ho, Jeong, Joo-hyun
• Primary Examiner(s): Blum; David S
• Application Number:
  US11/656,451
• Publication Number:
  US 20070170590A1
• Time in Patent Office: 1,540 Days
• Field of Search: 336/232, 336/105, 336/200, 257/528, 257/531, 257/758, 257/E29.001, 257/E27.011, 333/3
• US Class Current: 257/531
• CPC Class Codes: H01L 21/2855 by physical means, e.g. sputtering, evaporation H01L21/28518 - H01L21/28537 and H01L21/28568 take precedence
• CPC Class Codes: H01L 21/76841 Barrier, adhesion or liner layers
• CPC Class Codes: H01L 23/5227 Inductive arrangements or effects of, or between, wiring layers other inductive arrangements H01L23/645
• CPC Class Codes: H01L 23/53223 Additional layers associated with aluminium layers, e.g. adhesion, barrier, cladding layers
• CPC Class Codes: H01L 23/53238 Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
• CPC Class Codes: H01L 28/10 Inductors
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A semiconductor device includes an interlayer insulating film and an inductor. The inductor includes a first soft magnetic thin film pattern formed on the interlayer insulating film, the first soft magnetic film comprising a) at least one material selected from Fe, Co, Ni, or alloys thereof b) at least one element selected from Ti, Hf, or B, and c) N, a metal film pattern formed on the first soft magnetic thin film pattern and a second soft magnetic thin film pattern formed on the metal film pattern, the second soft magnetic thin film pattern comprising a) at least one material selected from Fe, Co, Ni, or alloys thereof; b) at least one element selected from Ti, Hf, or B; and c) N. Edges of the first soft magnetic thin film pattern, edges of the metal film pattern and edges of the second soft magnetic thin film pattern are vertically aligned.

Claims

1. A semiconductor device, comprising:

an interlayer insulating film formed on a semiconductor substrate; and

an inductor provided on the interlayer insulating film, the inductor comprising;

a first soft magnetic thin film pattern formed on the interlayer insulating film, the first soft magnetic film comprising;

a) at least one material selected from Co, Ni, an alloy thereof, or an alloy thereof with Fe;

b) at least one element selected from Ti, Hf, or B, and c) N;

a metal film pattern formed directly on the first soft magnetic thin film pattern; and

a second soft magnetic thin film pattern formed directly on the metal film pattern, the second soft magnetic thin film pattern comprising a) at least one material selected from Co, Ni, an alloy thereof, or an alloy thereof with Fe;

b) at least one element selected from Ti, Hf, or B; and

c) N, wherein;

edges of the first soft magnetic thin film pattern, edges of the metal film pattern, and edges of the second soft magnetic thin film pattern are vertically aligned, and

the first soft magnetic thin film pattern, the metal film pattern, and the second soft magnetic thin film pattern fully overlap each other.

2. The semiconductor device as claimed in claim 1, wherein the first soft magnetic thin film pattern and the second soft magnetic thin film pattern are each about 5,000-10,000 Å

thick.

3. The semiconductor device as claimed in claim 1, wherein the metal film comprises aluminum or copper.

4. The semiconductor device as claimed in claim 1, wherein the interlayer insulating film comprises SiO_x, SiON, TiO_x or TaO_x.

5. The semiconductor device as claimed in claim 1, wherein the first soft magnetic thin film pattern, the metal film pattern, and the second soft magnetic thin film pattern have a same shape.

6. The semiconductor device as claimed in claim 1, wherein the first soft magnetic thin film pattern, the metal film pattern, and the second soft magnetic thin film pattern are a spiral shape.

7. The semiconductor device as claimed in claim 1, wherein at least one of the first and second soft magnetic thin film patterns comprise Co or Ni.

8. A semiconductor device, comprising:

an interlayer insulating film formed on a semiconductor substrate and having a plurality of lower wire layers; and

an inductor and an uppermost wire layer coupled with a lower wire layer on the interlayer insulating film, the inductor and the uppermost wire layer each comprising;

a first soft magnetic thin film pattern which is formed on the interlayer insulating film, the first soft magnetic film pattern comprising;

a) at least one of Co, Ni, an alloy thereof, or an alloy thereof with Fe;

b) at least one element selected from Ti, Hf, or B; and

c) N;

a metal film pattern formed directly on the first soft magnetic thin film pattern; and

a second soft magnetic thin film pattern formed directly on the metal film pattern, the second soft magnetic film pattern comprising;

a) at least one of Co, Ni, an alloy thereof, or an alloy thereof with Fe;

b) at least one element selected from Ti, Hf, or B; and

c) N, wherein;

edges of the first soft magnetic thin film pattern, edges of the metal film pattern, and edges of the second soft magnetic thin film pattern are vertically aligned, and

the first soft magnetic thin film pattern, the metal film pattern, and the second soft magnetic thin film pattern fully overlap each other.

9. The semiconductor device as claimed in claim 8, wherein the first soft magnetic thin film pattern and the second soft magnetic thin film pattern each are about 5,000-10,000 Å

thick.

10. The semiconductor device as claimed in claim 8, wherein the metal film comprises aluminum or copper.

11. The semiconductor device as claimed in claim 8, wherein the interlayer insulating film comprises SiO_x, SiON, TiO_x or TaO_x.

12. The semiconductor device as claimed in claim 8, wherein the first soft magnetic thin film pattern, the metal film pattern, and the second soft magnetic thin film pattern have a same shape.

13. The semiconductor device as claimed in claim 8, wherein the first soft magnetic thin film pattern, the metal film pattern, and the second soft magnetic thin film pattern are a spiral shape.

14. The semiconductor device as claimed in claim 8, wherein at least one of the first and second soft magnetic thin film patterns comprise Co or Ni.