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DRAM having deep trench capacitors with lightly doped buried plates

  • US 7,923,815 B2
  • Filed: 01/07/2008
  • Issued: 04/12/2011
  • Est. Priority Date: 01/07/2008
  • Status: Expired due to Fees
First Claim
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1. A microelectronic element comprising:

  • a semiconductor substrate;

    a first capacitor comprising a trench formed in the substrate, a first buried plate surrounding the trench, a node dielectric lining the trench, and a node disposed within the trench, and wherein the first buried plate has a first doping concentration;

    a second capacitor comprising a trench formed in the substrate, a second buried plate surrounding the trench, a node dielectric lining the trench, and a node disposed within the trench, and wherein the second buried plate has a second doping concentration;

    a first contact plug directly connected to the first buried plate for applying a first bias voltage to the first buried plate;

    a second contact plug directly connected to the second buried plate for applying a second bias voltage, different than the first bias voltage, to the second buried plate; and

    the semiconductor substrate having a non-uniform doping concentration wherein the first doping concentration differs from the second doping concentration by at least one order of magnitude.

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