Methods for identifying array areas in dies formed on a wafer and methods for setting up such methods

• US 7,925,072 B2
• Filed: 03/08/2007
• Issued: 04/12/2011
• Est. Priority Date: 03/08/2007
• Status: Active Grant

• Current Assignee: Kla-Tencor Technologies Corporation (KLA Corporation)
• Original Assignee: Kla-Tencor Technologies Corporation (KLA Corporation)
• Inventors: Cook, Michael, Gupta, Ajay, Wallingford, Richard, Namjoshi, Kaustubh (Kaust), Van Riet, Mike, Chen, Chien-Huei (Adam)
• Primary Examiner(s): RAHMJOO, MANUCHEHR
• Application Number:
  US11/683,696
• Publication Number:
  US 20080219545A1
• Time in Patent Office: 1,496 Days
• Field of Search: 382/145, 382/144, 382/141, 382/147, 382/148, 382/151, 356/388, 356/394, 356/429
• US Class Current: 382/145
• CPC Class Codes: G06T 2207/30148 Semiconductor; IC; Wafer
• CPC Class Codes: G06T 7/001 using an image reference approach

Abstract

Methods for identifying array areas in dies formed on a wafer and methods for setting up such methods are provided. One method for identifying array areas in dies formed on a wafer includes comparing an array pattern in a template image acquired in one of the array areas to a search area image acquired for the wafer. The method also includes determining areas in the search area image in which a pattern is formed that substantially matches the array pattern in the template image based on results of the comparing step. In addition, the method includes identifying the array areas in the dies formed on the wafer based on results of the determining step.

Claims

1. A computer-implemented method for identifying array areas in dies formed on a wafer, comprising:

comparing an array pattern in a template image acquired in one of the array areas to a search area image acquired for the wafer;

determining areas in the search area image in which a pattern is formed that substantially matches the array pattern in the template image based on results of said comparing; and

identifying the array areas in the dies formed on the wafer based on results of said determining, wherein said identifying comprises projecting the areas in the search area image onto an axis and determining discontinuities in the areas projected onto the axis as page breaks extending in a direction substantially perpendicular to the axis, and wherein said comparing, said determining the areas, and said identifying are performed using a computer system, wherein said identifying further comprises determining a difference histogram using one or more of the areas in the search area image located at different positions in the search area image, determining a threshold based on the difference histogram, and expanding one or more of the areas in the search area image using the threshold.

2. The method of claim 1, wherein the array pattern is resolved in the template image.

3. The method of claim 1, wherein said comparing comprises pattern matching, and wherein said determining the areas comprises applying a threshold to results of the pattern matching.

4. The method of claim 1, further comprising acquiring the search area image by acquiring a swath of image data in a first direction across the wafer and acquiring a swath of image data in a second direction across the wafer, wherein the second direction is substantially perpendicular to the first direction.

5. The method of claim 1, further comprising acquiring the template image during a first scan of the wafer and acquiring the search area image during a second scan of the wafer.

6. The method of claim 1, wherein the search area image comprises images of two or more of the array areas separated by one or more of the page breaks.

7. The method of claim 1, wherein all steps of the computer-implemented method are performed automatically.

8. The method of claim 1, wherein the template image and the search area image are acquired using bright field imaging.

9. A system configured to identify array areas in dies formed on a wafer, comprising:

an inspection subsystem configured to acquire a template image in one of the array areas and a search area image for the wafer; and

a computer subsystem configured to compare an array pattern in the template image to the search area image, to determine areas in the search area image in which a pattern is formed that substantially matches the array pattern in the template image based on results of the comparison, and to identify the array areas in the dies formed on the wafer based on results of the determination, wherein identifying the array areas comprises projecting the areas in the search area image onto an axis and determining discontinuities in the areas projected onto the axis as page breaks extending in a direction substantially perpendicular to the axis, wherein said identifying further comprises determining a difference histogram using one or more of the areas in the search area image located at different positions in the search area image, determining a threshold based on the difference histogram, and expanding one or more of the areas in the search area image using the threshold.