Selective silicide process

• US 7,927,942 B2
• Filed: 12/19/2008
• Issued: 04/19/2011
• Est. Priority Date: 12/19/2008
• Status: Active Grant

• Current Assignee: ASM International NV
• Original Assignee: ASM International NV
• Inventors: Raaijmakers, Ivo
• Primary Examiner(s): Pham; Hoai V
• Application Number:
  US12/339,672
• Publication Number:
  US 20100155859A1
• Time in Patent Office: 851 Days
• Field of Search: 438/197, 438/199, 438/583, 438/682, 438/754, 438/755, 257/E21.632
• US Class Current: 438/199
• CPC Class Codes: C23C 16/405 of refractory metals or yttrium
• CPC Class Codes: C23C 16/56 After-treatment
• CPC Class Codes: H01L 21/28518 the conductive layers comprising silicides H01L21/28537 takes precedence
• CPC Class Codes: H01L 21/28562 Selective deposition
• CPC Class Codes: H01L 21/76823 transforming an insulating layer into a conductive layer
• CPC Class Codes: H01L 29/665 using self aligned silicidation, i.e. salicide formation of conductive layers comprising silicides H01L21/28518
• CPC Class Codes: H01L 29/66568 Lateral single gate silicon transistors

Abstract

A method of self-aligned silicidation on structures having high aspect ratios involves depositing a metal oxide film using atomic layer deposition (ALD) and converting the metal oxide film to metal film in order to obtain uniform step coverage. The substrate is then annealed such that the metal in regions directly overlying the patterned and exposed silicon reacts with the silicon to form uniform metal silicide at the desired locations.

Claims

1. A method for selective silicidation, comprising:

providing a substrate comprising a three-dimensional transistor structure, wherein the structure has one or more exposed vertical silicon regions;

alternately and sequentially contacting the substrate with a metal source precursor and an oxygen source precursor to form a metal oxide film about 1 to 200 nm thick directly over the exposed vertical silicon regions;

reducing the metal oxide film to a metal film; and

annealing the metal film to form a metal silicide film over the exposed vertical silicon regions.

2. The method of claim 1, further comprising a conversion step to convert the metal silicide film to a phase of lower resistivity after annealing.

3. The method of claim 1, wherein the transistor comprises a FinFET.

4. The method of claim 1, wherein the metal source precursor comprises at least one of Ni, Co, Cu, Fe, Ru, Rh, Pt and Pd.

5. The method of claim 4, wherein the metal source precursor comprises nickel.

6. The method of claim 5, wherein the metal source precursor is Ni(cp)₂.

7. The method of claim 1, wherein the oxygen source precursor is chosen from a group consisting of O₂, H₂O, O₃, oxygen plasma, oxygen radicals or oxygen atoms or a reactive oxygen gas.

8. The method of claim 1, wherein the reducing step comprises contacting the substrate with a vapor phase reducing agent.

9. The method of claim 8, wherein the vapor phase reducing agent is chosen from a group consisting of H₂, NH₃, hydrogen containing plasma, hydrogen radicals, hydrogen atoms, an alcohol, an aldehyde, and a carboxylic acid.

10. The method of claim 8, wherein the reducing step occurs at a temperature less than about 400°

C.

11. The method of claim 1, wherein the reducing step and the annealing step are conducted simultaneously.

12. The method of claim 1, wherein the annealing step is conducted at a temperature from about 200°

C. to about 500°

C.

13. The method of claim 1, wherein the annealing step has a duration sufficient for portions of the metal film overlying the exposed silicon regions of the three-dimensional structure to react to form metal silicide, wherein the duration is less than about 2 minutes.

14. The method of claim 1, wherein the thickness of the metal silicide film is between about 3 nm and about 200 nm.

15. A method for semiconductor fabrication, comprising:

depositing a metal oxide film about 1 to about 200 nm thick on a substrate comprising one or more exposed vertical silicon surfaces by atomic layer deposition (ALD);

reducing the metal oxide film to a metal film; and

annealing the metal film to form a metal silicide film in at least one region wherein the metal film contacts the vertical silicon surfaces.

16. The method of claim 15, further comprising converting the metal silicide film to a phase of lower resistivity.

17. The method of claim 16, wherein the metal silicide film is chosen from a group consisting of Ni₂Si, NiSi, NiSi₂.

18. The method of claim 17, wherein the phase of lower resistivity comprises NiSi.

19. The method of claim 15, wherein the substrate comprises a three-dimensional structure.

20. The method of claim 15, wherein the ALD process comprises:

contacting the substrate with a metal precursor;

removing any unreacted metal precursor and reaction by-products;

contacting the substrate with an oxygen precursor; and

removing any unreacted oxygen precursor and reaction by-products.

21. The method of claim 15, wherein reducing the metal oxide film to a metal film comprises contacting the metal oxide film with a vapor phase reducing agent, wherein the vapor phase reducing agent is chosen from the group consisting of H₂, NH₃, plasma, and reactive organic compounds.

22. The method of claim 21, wherein reducing the metal oxide film to a metal film is conducted at a temperature from about 250°

C. to about 350°

C.

23. The method of claim 15, wherein reducing the metal oxide film to a metal film and annealing the metal film to form a metal silicide film are conducted in a shared reaction space.

24. The method of claim 23, wherein reducing the metal oxide film to a metal film and annealing the metal film to form a metal silicide film are conducted simultaneously.

25. A method for selective silicidation, comprising:

forming a nickel oxide thin film about 1 to 200 nm thick by at least one cycle of an atomic layer deposition (ALD) process, wherein one cycle comprises;

contacting a substrate with a nickel source precursor;

contacting the substrate with an oxygen source precursor, wherein the substrate has at least one exposed vertical silicon region;

reducing the nickel oxide film to a nickel film; and

annealing the nickel film to form a nickel silicide film over the exposed vertical silicon region.

26. The method of claim 25, wherein the nickel source precursor is chosen from a group consisting of nickel betadiketonate compounds, nickel cyclopentadienyl compounds, and nickel carbonyl compounds.

27. The method of claim 26, wherein the nickel source precursor may comprise Ni(acac)₃, Ni(cp)₂ or Ni(thd)₃.

28. The method of claim 25, wherein the oxygen source precursor is chosen from a group consisting of O₂, H₂O, O₃, oxygen plasma, oxygen radicals or oxygen atoms or a reactive oxygen gas.

29. The method of claim 25, wherein reducing the nickel oxide film to a nickel film comprises contacting the nickel oxide film with a vapor phase reducing agent, wherein the vapor phase reducing agent is chosen from the group consisting of H₂, NH₃, hydrogen containing plasma, hydrogen radicals, hydrogen atoms, an alcohol, an aldehyde, and a carboxylic acid, and reactive organic compounds.

30. The method of claim 29, wherein the vapor phase reducing agent is an H₂ plasma.

31. The method of claim 25, wherein reducing the nickel oxide film to a nickel film and annealing the nickel film to form a nickel silicide film are carried out in situ.