Devices with nanocrystals and methods of formation
First Claim
1. A method of growing nanoscale structures on a semiconductor substrate, comprising:
- implanting the semiconductor substrate with ions at a selected energy and a selected dose such that a controlled distribution of nucleation sites embedded in a surface of an insulative layer is formed, the surface disposed away from an interface formed by the insulative layer disposed on the semiconductor substrate, implanted material of the ions in the surface being the nucleation sites arranged to seed growth of nanoscale structures; and
growing conductive nanoscale structures from the nucleation sites on the insulative layer by depositing material on the nucleation sites of the implanted material in the surface.
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Abstract
An aspect relates to a method of growing nanoscale structures on a semiconductor substrate. According to various embodiments, nucleation sites are created on a surface of the substrate. The creation of the nucleation sites includes implanting ions with an energy and a dose selected to provide a controllable distribution of the nucleation sites across the surface of the substrate. Nanoscale structures are grown using the controllable distribution of nucleation sites to seed the growth of the nanoscale structures. According to various embodiments, the nanoscale structures include at least one of nanocrystals, nanowires and nanotubes. According to various nanocrystal embodiments, the nanocrystals are positioned within a gate stack and function as a floating gate for a nonvolatile device. Other aspects and embodiments are provided herein.
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Citations
34 Claims
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1. A method of growing nanoscale structures on a semiconductor substrate, comprising:
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implanting the semiconductor substrate with ions at a selected energy and a selected dose such that a controlled distribution of nucleation sites embedded in a surface of an insulative layer is formed, the surface disposed away from an interface formed by the insulative layer disposed on the semiconductor substrate, implanted material of the ions in the surface being the nucleation sites arranged to seed growth of nanoscale structures; and growing conductive nanoscale structures from the nucleation sites on the insulative layer by depositing material on the nucleation sites of the implanted material in the surface. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method of growing nanocrystals on a semiconductor substrate, comprising:
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implanting ions into a surface of an insulative layer, the surface disposed away from an interface formed by the insulative layer disposed on the semiconductor substrate, the ions implanted at a selected energy and a selected dose forming a controlled distribution of nucleation sites embedded in the surface, implanted material of the ions, implanted in the surface, being the nucleation sites arranged to seed growth of nanoscale structures; and depositing material on the implanted material to grow conductive nanocrystals from the implanted material as nucleation sites on the insulative layer. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34)
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Specification