Semiconductor material manufacture

• US 7,927,975 B2
• Filed: 02/04/2009
• Issued: 04/19/2011
• Est. Priority Date: 02/04/2009
• Status: Active Grant

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Sandhu, Gurtej S., Sinha, Nishant, Smythe, John
• Primary Examiner(s): MANDALA, MICHELLE
• Application Number:
  US12/365,734
• Publication Number:
  US 20100193897A1
• Time in Patent Office: 804 Days
• Field of Search: 438/406, 438/407, 438/403, 438/458, 438/463, 438/464, 438/520, 438/528, 257/E21.568
• US Class Current: 438/463
• CPC Class Codes: H01L 21/76254 with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond

Abstract

Electronic apparatus, systems, and methods include a semiconductor layer bonded to a bulk region of a wafer or a substrate, in which the semiconductor layer can be bonded to the bulk region using electromagnetic radiation. Additional apparatus, systems, and methods are disclosed.

Claims

1. A method comprising:

introducing ions into a donor wafer in proximity to a region of the donor wafer, the region having modifiers, the modifiers being different from bulk material of the donor wafer, the region being disposed at a distance from a surface of the donor wafer;

bonding a product wafer and the donor wafer together; and

irradiating the modifiers with electromagnetic radiation to disunite a bulk region of the donor wafer from the product wafer with the product wafer bonded to a film from the donor wafer, the electromagnetic radiation tuned to a frequency correlated to absorption by the modifiers.

2. The method of claim 1, wherein bonding the product wafer and the donor wafer together includes bonding the donor wafer and the product wafer at a dielectric layer.

3. The method of claim 1, wherein bonding the product wafer includes bonding the product wafer having devices contained in the product wafer.

4. The method of claim 1, wherein irradiating the modifiers with electromagnetic radiation includes tuning the electromagnetic radiation correlated to mixtures of material from implanting ions and the modifiers in the region.

5. The method of claim 1, wherein irradiating the modifiers with electromagnetic radiation includes limiting exposure of the electromagnetic radiation to the donor wafer.

6. A method comprising:

implanting hydrogen ions and/or helium ions into a silicon donor wafer in proximity to a region having modifiers, the modifiers being different from silicon, the region being disposed at a distance from a surface of the donor wafer;

bonding a silicon product wafer to the silicon donor wafer such that the surface of the silicon donor wafer bonds to an oxide layer of the silicon product wafer; and

exposing the modifiers to microwaves at the hydrogen and/or helium to disunite a bulk region of the silicon donor wafer from the silicon product wafer with the oxide layer of the silicon product wafer bonded to a silicon film from the silicon donor wafer, the microwaves tuned to a frequency correlated to absorption by the modifiers.

7. The method of claim 6, wherein exposing the modifiers to microwaves includes exposing the modifiers to microwaves with a peak frequency of about 5.8 GHz.

8. The method of claim 6, wherein the method includes forming the silicon film on the product wafer with the product wafer at an iso-thermal temperature less than 350°

C.

9. The method of claim 6, wherein the method includes providing the silicon donor wafer with modifiers selected from phosphorous, arsenic, boron, or combinations thereof.

10. The method of claim 6, wherein exposing the modifiers to microwaves includes activating the modifiers in the silicon donor wafer.