Method of manufacturing semiconductor devices

• US 7,927,985 B2
• Filed: 11/06/2009
• Issued: 04/19/2011
• Est. Priority Date: 11/10/2008
• Status: Expired due to Fees

• Current Assignee: Stanley Electric Company Limited
• Original Assignee: Stanley Electric Company Limited
• Inventors: Tanaka, Shinichi, Saito, Tatsuya, Yokobayashi, Yusuke
• Primary Examiner(s): Ghyka; Alexander G
• Assistant Examiner(s): MUSTAPHA, ABDULFATTAH B
• Application Number:
  US12/613,622
• Publication Number:
  US 20100120237A1
• Time in Patent Office: 529 Days
• Field of Search: 438 13- 48, 438/507, 257 98-103, 257/E21.09, 257/E21.001, 257/E21.121, 257/E33.067, 257/E33.068, 257/E33.074
• US Class Current: 438/507
• CPC Class Codes: H01L 21/0242 Crystalline insulating materials
• CPC Class Codes: H01L 21/0254 Nitrides
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/0095 Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination

Abstract

A growth substrate is removed from a semiconductor film, and a surface of the semiconductor film exposed by removing the growth substrate is flattened. The semiconductor film along device division lines are partially etched by dry etching to form grooves in a lattice that form streets, not reaching the metal support in the semiconductor film. The surface of the semiconductor film at the bottom of the grooves is flattened. The semiconductor film along the device division lines at the bottom of the grooves are further etched by wet etching to expose the metal support at the bottom of the grooves to finish the streets.

Claims

1. A method of manufacturing semiconductor devices which includes a support having a metal surface and a semiconductor film formed on said metal surface of said support, comprising:

a semiconductor film growing step of epitaxially growing said semiconductor film on a growth substrate;

a support forming step of forming said support on a surface of said semiconductor film such that said metal surface is attached to said surface of said semiconductor film;

a growth substrate removing step of removing said growth substrate from said semiconductor film;

a first flattening step of flattening a surface of said semiconductor film exposed by removing said growth substrate;

a first etching step of partially etching said semiconductor film along device division lines at the surface flattened at said first flattening step by dry etching to form grooves in said semiconductor film, said grooves having a lattice form and not reaching said support;

a second flattening step of flattening a surface of said semiconductor film at the bottom of said grooves;

a second etching step of further partially etching said semiconductor film along said device division lines at the bottom of said grooves by wet etching to expose said metal surface of said support at the bottom of said grooves; and

a groove forming step of forming division grooves in said support exposed at the bottom of said grooves.

2. A method according to claim 1, wherein said semiconductor film is comprised of group-III nitride semiconductor layers of a wurtzite structure and is formed along a C-axis direction of the crystal structure on said growth substrate.

3. A method according to claim 2, wherein said semiconductor film comprises an n-type semiconductor layer, an active layer, and a p-type semiconductor layer that are sequentially laid one over another on said growth substrate and each made of Al_xIn_yGa_zN, where 0≦

x≦

1, 0≦

y≦

1, 0≦

z≦

1, and x+y+z=1.

4. A method according to claim 3, wherein said second etching step includes a process of forming hexagonal pyramid-shaped protrusions deriving from the crystal structure of said semiconductor film in a surface thereof.

5. A method according to claim 1, wherein the thickness of said semiconductor film remaining on areas where said grooves are formed after said first etching step is 0.3 to 3 μ

m.

6. A method according to claim 1, wherein the flattening of said semiconductor film at said first and second flattening steps is performed by plasma dry etching using rare gas.

7. A method according to claim 1, wherein said first etching step includes a reactive ion etching process.

8. A method according to claim 1, wherein said growth substrate removing step is performed by a laser lift-off method.