Ion implantation with heavy halogenide compounds

• US 7,927,986 B2
• Filed: 07/22/2008
• Issued: 04/19/2011
• Est. Priority Date: 07/22/2008
• Status: Active Grant

• Current Assignee: Varian Semiconductor Equipment Associates Incorporated (Applied Materials Incorporated)
• Original Assignee: Varian Semiconductor Equipment Associates Incorporated (Applied Materials Incorporated)
• Inventors: Arevalo, Edwin, Godet, Ludovic, Papasouliotis, George D.
• Primary Examiner(s): EVERHART, CARIDAD
• Application Number:
  US12/177,750
• Publication Number:
  US 20100022076A1
• Time in Patent Office: 1,001 Days
• Field of Search: 438/513, 438/506, 438/514, 257/E21.247, 257/E21.248, 257/E21.315, 257/E21.316, 257/E21.467, 216/74, 216/75, 216/76
• US Class Current: 438/513
• CPC Class Codes: H01J 2237/31701 Ion implantation
• CPC Class Codes: H01J 37/32412 Plasma immersion ion implantation
• CPC Class Codes: H01L 21/2236 from or into a plasma phase
• CPC Class Codes: H01L 21/26513 of electrically active species
• CPC Class Codes: H01L 21/2658 of a molecular ion, e.g. decaborane

Abstract

A method of plasma doping includes providing a dopant gas comprising a dopant heavy halogenide compound gas to a plasma chamber. A plasma is formed in the plasma chamber with the dopant heavy halogenide compound gas and generates desired dopant ions and heavy fragments of precursor dopant molecule. A substrate in the plasma chamber is biased so that the desired dopant ions impact the substrate with a desired ion energy, thereby implanting the desired dopant ions and the heavy fragments of precursor dopant molecule into the substrate, wherein at least one of the ion energy and composition of the dopant heavy halogenide compound is chosen so that the implant profile in the substrate is substantially determined by the desired dopant ions.

Claims

1. A method of plasma doping comprising:

providing a dopant heavy halogenide compound gas to a plasma chamber;

forming a plasma in the plasma chamber with the dopant heavy halogenide compound gas, the plasma generating desired dopant ions and heavy fragments of precursor dopant molecule;

forming a surface layer on a substrate;

biasing the substrate in the plasma chamber so that the desired dopant ions impact the substrate with a desired ion energy,

implanting the desired dopant ions and the heavy fragments of precursor dopant molecule into at least one of the substrate and the film, the desired dopant ions being implanted at a first depth and the heavy fragments of precursor dopant molecule being implanted at a second implant depth, the second implant depth being substantially 20% of the first implant depth or less; and

removing the surface layer after the implanting,

wherein at least one of ion energy and a composition of the dopant heavy halogenide compound is chosen so that an implant profile in the substrate is substantially determined by the desired dopant ions.

2. The method of claim 1 wherein the dopant heavy halogenide compound gas comprises a dopant iodide compound gas.

3. The method of claim 1 wherein the dopant heavy halogenide compound gas comprises BI₃ P-type dopant gas feedstock.

4. The method of claim 1 wherein the dopant heavy halogenide compound gas is selected from the group consisting of PI₃ and AsI₃ N-type dopant gas feedstock.

5. The method of claim 1 wherein the dopant heavy halogenide compound gas comprises a dopant bromide compound gas.

6. The method of claim 1 wherein at least one of the ion energy and the composition of dopant heavy halogenide compound gas is chosen so that etching caused by physically sputtering and chemical etching during plasina doping is at least partially compensated by deposition that occurs during plasma doping.

7. The method of claim 1 wherein at least one of the ion energy and the composition of dopant heavy halogenide compound gas is chosen to obtain a predetermined ratio of desired dopant ions to at least one of the heavy fragments of precursor dopant molecule.

8. The method of claim 1 further comprising providing Gel₄ gas to the plasma chamber and forming a plasma in the plasma chamber with the Ge1₄ gas, the plasma creating species that cause at least one of pre-amorphization and strain upon implantation into the substrate.

9. The method of claim 1 wherein the plasma further generates dilutent gas ions.

10. The method of claim 9 wherein the composition of the dopant heavy halogenide compound is chosen to reduce a number of dilutent gas ions implanted into the substrate.

11. The method of claim 1 wherein the second depth is less than a thickness of the surface layer on the substrate.

12. The method of claim 11, wherein the substrate is substantially free of the heavy fragments of precursor dopant molecules.

13. A method of plasma doping comprising:

forming a surface layer on a substrate;

providing a dopant heavy halogenide compound gas to a plasma chamber;

forming a plasma in the plasma chamber with the dopant heavy halogenide compound gas, the plasma generating desired dopant ions and heavy fragments of precursor dopant molecule; and

biasing a substrate in the plasma chamber and directing the desired dopant ions and the heavy fragments of precursor dopant molecules toward the substrate;

implanting desired dopant ions into the substrate at a first ion energy;

trapping the heavy fragments precursor dopant molecules in the surface layer; and

removing the surface layer.

14. The method of claim 13 wherein the surface layer comprises an oxide layer.

15. The method of claim 13 wherein the dopant heavy halogenide compound gas comprises a dopant iodide compound gas.

16. The method of claim 13 wherein the dopant heavy halogenide compound gas comprises a dopant bromide compound gas.

17. The method of claim 13 wherein a projected range of the heavy fragments of precursor dopant molecule is less than a thickness of the surface layer.

18. The method of claim 13 wherein at least one of ion energy and composition of dopant heavy halogenide compound gas is chosen so that etching caused by physically sputtering and chemical etching during plasma doping is at least partially compensated by deposition that occurs during plasma doping.

19. The method of claim 13 wherein at least one of ion energy and composition of dopant heavy halogenide compound gas is chosen to obtain a predetermined ratio of desired dopant ions to at least one of the heavy fragments of precursor dopant molecule.

20. The method of claim 13 wherein the plasma further generates dilutent gas ions.

21. The method of claim 13, wherein the substrate is substantially free of the heavy fragments of precursor dopant molecules.

22. A method of ion implanting comprising:

forming a surface layer on a substrate;

generating dopant and dopant heavy halogenide compound ions;

accelerating the dopant and dopant heavy halogenide compound ions;

implanting the accelerated dopant and dopant heavy halogenide compound ions into at least one of the surface layer and the substrate with a desired ion energy, the desired dopant ions being implanted at a first implant depth and the dopant heavy halogenide compound ions being implanted at a second implant depth, the second implant depth being substantially 20% of the first implant depth or less; and

removing the surface layer after the implanting, wherein an implant profile in the substrate is substantially determined by the first implant depth of the desired dopant ions.

23. The method of claim 22 wherein the dopant heavy halogenide compound gas comprises a dopant iodide compound gas.

24. The method of claim 22 wherein the dopant heavy halogenide compound gas comprises a dopant bromide compound gas.

25. The method of claim 22, wherein the substrate is substantially free of the heavy fragments of precursor dopant molecules.