Solid-state image capturing device, image capturing device, and manufacturing method of solid-state image capturing device

• US 7,928,352 B2
• Filed: 09/25/2007
• Issued: 04/19/2011
• Est. Priority Date: 10/04/2006
• Status: Expired due to Fees

• Current Assignee: Sony Corporation (Sony Group Corp.)
• Original Assignee: Sony Corporation (Sony Group Corp.)
• Inventors: Toda, Atsushi
• Primary Examiner(s): Lee; John R
• Application Number:
  US11/903,953
• Publication Number:
  US 20080087800A1
• Time in Patent Office: 1,302 Days
• Field of Search: 250/208.1, 250/214.1, 348/294, 348/311, 257/291, 257/292, 257/431, 257/440, 257/450, 257/463, 257/464
• US Class Current: 250/208.1
• CPC Class Codes: H01L 27/14603 Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
• CPC Class Codes: H01L 27/14609 Pixel-elements with integrated switching, control, storage or amplification elements scanning details of imagers (circuitry of solid-state image sensors H04N25/00); circuitry of imagers H04N25/70
• CPC Class Codes: H01L 27/14621 Colour filter arrangements
• CPC Class Codes: H01L 27/14623 Optical shielding
• CPC Class Codes: H01L 27/14627 Microlenses
• CPC Class Codes: H01L 27/14645 Colour imagers
• CPC Class Codes: H01L 27/14649 Infrared imagers
• CPC Class Codes: H01L 27/14843 Interline transfer
• CPC Class Codes: H01L 31/035281 Shape of the body

Abstract

A solid-state image capturing device includes a first detecting unit for detecting a first wavelength component and a second detecting unit for detecting a second wavelength component which has a longer wavelength than at least the first wavelength component and wherein in a depth direction, an active region where a first type dopant of the second detecting unit is located is deeper than an active region where a first electroconductive type dopant of the first detecting unit is located. A signal processor modifies an output signal from at least one detecting unit based on a received signal quantity at another detecting unit and a type of filter above at least one of the detecting units.

Claims

1. A solid-state image capturing device, comprising:

a first detecting unit configured to detect a first wavelength component; and

a second detecting unit configured to detect a second wavelength component which has a longer wavelength than said first wavelength component;

and wherein, in the depth direction, an active region where a first type dopant of said second detecting unit is formed reaches deeper than an active region where said first type dopant of said first detecting unit is located; and

further wherein a signal processor modifies an output signal from at least one detecting unit based on a received signal quantity at another detecting unit and a type of filter above at least one of the detecting units.

2. The solid-state image capturing device according to claim 1, wherein an active region where the first type dopant is subjected to modulation doping, whereby the deeper from the surface, the lower the concentration of said dopant.

3. The solid-state image capturing device according to claim 2, comprising:

wherein both detecting units are subjected to said modulation doping.

4. The solid-state image capturing device according to claim 2, wherein a second electroconductive type dopant is formed such that a peak position of concentration of said second electroconductive type dopant is deeper than a peak position of concentration of said first electroconductive type dopant.

5. An image capturing device comprising:

a first detecting unit configured to detect a first wavelength component; and

a second detecting unit configured to detect a second wavelength component which is longer than at least said first wavelength component;

and wherein, a first type dopant of said second detecting unit reaches a portion deeper than a dopant of said first detecting unit; and

a correction processing unit configured to subject a signal obtained at said first detecting unit to correction using a signal obtained at said second detecting unit and further wherein a signal processor modifies an output signal from at least one detecting unit based on a received signal quantity at another detecting unit and a type of filter above at least one of the detecting units.

6. The image capturing device according to claim 5, wherein at least a first type dopant that is formed in the depth direction is subjected to modulation doping, whereby the deeper from a substrate surface, the lower the concentration of said dopant.