Detector and inspecting apparatus

• US 7,928,382 B2
• Filed: 08/10/2006
• Issued: 04/19/2011
• Est. Priority Date: 08/12/2005
• Status: Active Grant

• Current Assignee: Ebara Corporation
• Original Assignee: Ebara Corporation
• Inventors: Suematsu, Kenichi, Yoshikawa, Shoji, Noji, Nobuharu, Hatakeyama, Masahiro, Karimata, Tsutomu
• Primary Examiner(s): Kim; Robert
• Assistant Examiner(s): Sahu; Meenakshi S
• Application Number:
  US12/063,604
• Publication Number:
  US 20090224151A1
• Time in Patent Office: 1,713 Days
• Field of Search: 250/306, 250/307, 250/310, 250/311, 250/492.2
• US Class Current: 250/310
• CPC Class Codes: H01J 2237/2441 Semiconductor detectors, e.g. diodes
• CPC Class Codes: H01J 2237/2446 Position sensitive detectors
• CPC Class Codes: H01J 37/244 Detectors; Associated components or circuits therefor
• CPC Class Codes: H01J 37/261 Details
• CPC Class Codes: H01J 37/28 with scanning beams H01J37/268, H01J37/292, H01J37/2955 take precedence

Abstract

An inspecting apparatus for reducing a time loss associated with a work for changing a detector is characterized by comprising a plurality of detectors 11, 12 for receiving an electron beam emitted from a sample W to capture image data representative of the sample W, and a switching mechanism M for causing the electron beam to be incident on one of the plurality of detectors 11, 12, where the plurality of detectors 11, 12 are disposed in the same chamber MC. The plurality of detectors 11, 12 can be an arbitrary combination of a detector comprising an electron sensor for converting an electron beam into an electric signal with a detector comprising an optical sensor for converting an electron beam into light and converting the light into an electric signal. The switching mechanism M may be a mechanical moving mechanism or an electron beam deflector.

Claims

1. An inspecting apparatus comprising:

a plurality of detectors each for receiving an electron beam emitted from a sample to acquire image data representative of the sample; and

a switching mechanism for causing the electron beam to be incident on one of said plurality of detectors,

wherein said plurality of detectors are disposed within the same vacuum chamber, and

wherein said switching mechanism comprises;

a moving mechanism for mechanically moving one of said plurality of detectors to a position at which said one of said plurality of detectors does not prevent another one of said plurality of detectors from receiving the electron beam.

2. An inspecting apparatus according to claim 1, wherein said plurality of detectors comprise:

a first detector comprising an electron sensor for converting an electron beam into an electric signal; and

a second detector comprising an electron sensor for converting an electron beam into light and converting the light into an electric signal,

wherein said electron sensors are disposed within said vacuum chamber.

3. An inspecting apparatus according to claim 2, wherein said electron sensor of said first detector is an EB-CCD sensor having a plurality of pixels, and said electron sensor of said second detector is a TDI sensor having a plurality of pixels.

4. An inspecting apparatus according to claim 1, wherein said plurality of detectors comprise:

a third detector comprising an electron sensor for converting an electron beam into an electric signal; and

a fourth detector comprising a electron sensor for converting an electron beam into an electric signal,

wherein said electron sensors in said third detector and said fourth detector are disposed within said vacuum chamber.

5. An inspecting apparatus according to claim 4, wherein said electron sensor of said third detector is an EB-CCD sensor having a plurality of pixels, and said electron sensor of said fourth detector is an EB-TDI sensor having a plurality of pixels.

6. An inspecting apparatus according to claim 1, wherein said plurality of detectors comprise:

a fifth detector comprising an electron sensor for converting an electron beam into light and converting the light into an electric signal; and

a sixth detector comprising an electron sensor for converting an electron beam into light and converting the light into an electric signal,

wherein said electron sensors in said fifth detector and said sixth detector are disposed within said vacuum chamber.

7. An inspecting apparatus according to claim 1, wherein said plurality of detectors comprise:

a fifth detector comprising an electron sensor for converting an electron beam into light and converting the light into an electric signal; and

a sixth detector comprising an electron sensor for converting an electron beam into light and converting the light into an electric signal,

wherein at least one of said electron sensors in said fifth detector and said sixth detector is disposed in the atmosphere.

8. An inspecting apparatus according to claim 6, wherein said electron sensor of said fifth detector is a CCD sensor having a plurality of pixels, and said electron sensor of said sixth detector is a TDI sensor having a plurality of pixels.

9. An inspecting apparatus according to claim 1, wherein a two-dimensional image is captured.

10. An inspecting apparatus according to claim 1, further comprising an electron amplifier for amplifying the electron beam.

11. An inspecting apparatus according to claim 1, further comprising an electro-optical system such as a lens, wherein the trajectory of the electron beam is controlled by said electro-optical system.

12. An inspecting apparatus according to claim 11, wherein said electro-optical system comprises a noise cut aperture.

13. An inspecting apparatus according to claim 11, wherein said electro-optical system comprises a projection optical system.

14. An inspecting apparatus according to claim 1, further comprising an electron source for irradiating the sample with electrons.

15. An inspecting apparatus according to claim 1, further comprising an electromagnetic wave source for irradiating the sample with an electromagnetic wave.

16. An inspecting apparatus according to claim 1, further comprising an electron source for irradiating the sample with electrons, and an electromagnetic wave source for irradiating the sample with an electromagnetic wave.

17. An inspecting apparatus according to claim 15, wherein said electromagnetic wave source is capable of generating one of UV light, DUV light, laser light, and X-ray.

18. A defect inspecting apparatus comprising the inspecting apparatus according to claim 1.

19. A device manufacturing method of inspecting a wafer for defects halfway in a process by the defect inspecting apparatus according to claim 18.

20. A defect inspecting apparatus comprising:

a primary optical system having an electron gun for emitting a primary electron beam for guiding the primary electron beam to a sample; and

a secondary optical system for guiding a secondary electron beam emitted from the sample to a detection system, said detection system comprising;

a first EB-CCD sensor for adjusting the optical axis of an electron beam;

an EB-TDI sensor for capturing an image of the sample;

a second EB-CCD sensor for evaluating a defective site based on the image captured by said EB-TDI sensor; and

a moving mechanism for mechanically moving said first and second EB-CCD sensors to a position at which any one of said EB-CCD sensors and said EB-TDI sensor receives the electron beam.

21. A defect inspecting apparatus according to claim 20, wherein said second EB-CCD sensor has a pixel size smaller than a pixel size of said first EB-CCD sensor.

22. A defect inspecting method for inspecting a sample for defects in a defect inspecting apparatus having a primary optical system for guiding the primary electron beam to a sample, and a secondary optical system for guiding a secondary electron beam emitted from the sample to a detection system comprising an EB-CCD sensor and an EB-TDI sensor, said method comprising:

adjusting an optical axis using said EB-CCD sensor;

mechanically moving said EB-CCD sensor to a position where said EB-CCD sensor does not prevent said EB-TDI sensor from receiving the electron beam;

capturing an image of a sample using said EB-TDI sensor;

specifying a defective site on the sample from the image captured by said EB-TDI sensor;

capturing an image of the defective site on the sample using said EB-CCD sensor; and

comparing the image of the defective site captured by said EB-TDI sensor with the image of the defective site captured by said EB-CCD sensor to determine a false defect or a true defect.