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Method and structure for forming strained SI for CMOS devices

  • US 7,928,443 B2
  • Filed: 01/11/2010
  • Issued: 04/19/2011
  • Est. Priority Date: 11/05/2003
  • Status: Expired due to Fees
First Claim
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1. A semiconductor device, comprising:

  • a semiconductor substrate having at least one gap, extending under an upper portion of the semiconductor substrate and above a lower portion of the semiconductor substrate;

    a gate stack on the semiconductor substrate;

    a strain layer formed in at least a portion of the at least one gap; and

    source and drain regions formed in the upper portion of the semiconductor substrate and on respective sides of the gate stack.

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