Method and structure for forming strained SI for CMOS devices
First Claim
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1. A semiconductor device, comprising:
- a semiconductor substrate having at least one gap, extending under an upper portion of the semiconductor substrate and above a lower portion of the semiconductor substrate;
a gate stack on the semiconductor substrate;
a strain layer formed in at least a portion of the at least one gap; and
source and drain regions formed in the upper portion of the semiconductor substrate and on respective sides of the gate stack.
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Abstract
A semiconductor device includes a semiconductor substrate having at least one gap, extending under a portion of the semiconductor substrate. A gate stack is on the semiconductor substrate. A strain layer is formed in at least a portion of the at least one gap. The strain layer is formed only under at least one of a source region and a drain region of the semiconductor device.
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Citations
20 Claims
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1. A semiconductor device, comprising:
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a semiconductor substrate having at least one gap, extending under an upper portion of the semiconductor substrate and above a lower portion of the semiconductor substrate; a gate stack on the semiconductor substrate; a strain layer formed in at least a portion of the at least one gap; and source and drain regions formed in the upper portion of the semiconductor substrate and on respective sides of the gate stack. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A semiconductor device, comprising:
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a semiconductor substrate; a strain layer arranged in a gap formed in the semiconductor substrate such that at least a portion of the semiconductor substrate extends over the gap; and a gate stack formed on the semiconductor substrate above the gap, the gate stack including a gate body disposed on a gate dielectric and sidewall spacers formed on sides of the gate body and on a top surface of the gate dielectric; and source and drain regions formed in upper portions of the semiconductor substrate. - View Dependent Claims (11, 12, 13, 14, 15, 16)
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17. A p-type device, comprising:
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a semiconductor substrate having a gap on opposing sides of a portion of the semiconductor substrate which is substantially directly under a channel of a semiconductor device which is formed on a top surface of the semiconductor substrate; and a strain layer in the gap between an upper portion and lower portion of the semiconductor substrate and separated by the portion of the semiconductor substrate. - View Dependent Claims (18, 19, 20)
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Specification