Semiconductor light-emitting device and method for forming the same

• US 7,928,455 B2
• Filed: 06/29/2005
• Issued: 04/19/2011
• Est. Priority Date: 07/15/2002
• Status: Expired due to Fees

• Current Assignee: Epistar Corporation
• Original Assignee: Epistar Corporation
• Inventors: Hsieh, Min-Hsun, Tsai, Chia-Fen
• Primary Examiner(s): Fahmy; Wael M
• Assistant Examiner(s): SALERNO, SARAH KATE
• Application Number:
  US11/160,588
• Publication Number:
  US 20050263776A1
• Time in Patent Office: 2,120 Days
• Field of Search: 257/79, 257/E33.061, 257/E33.068, 257/E33.062, 257/99, 257/88, 257/E33.06, 438/48
• US Class Current: 257/98
• CPC Class Codes: H01L 2933/0016 relating to electrodes
• CPC Class Codes: H01L 2933/0033 relating to semiconductor body packages
• CPC Class Codes: H01L 2933/0041 relating to wavelength conversion elements
• CPC Class Codes: H01L 33/005 Processes
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/42 Transparent materials
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector
• CPC Class Codes: H01L 33/50 Wavelength conversion elements
• CPC Class Codes: H01L 33/505 characterised by the shape, e.g. plate or foil

Abstract

A semiconductor light-emitting device includes a light-impervious substrate, a bonding structure, a semiconductor light-emitting stack, and a fluorescent material structure overlaying the semiconductor light-emitting stack. The semiconductor light-emitting stack is separated from a growth substrate and bonded to the light-impervious substrate via the bonding structure. A method for producing the semiconductor light-emitting device includes separating a semiconductor light-emitting stack from a growth substrate, bonding the semiconductor light-emitting stack to a light-impervious substrate, and forming a fluorescent material structure over the semiconductor light-emitting stack.

Claims

1. A semiconductor light-emitting device comprising:

a light-impervious substrate;

a bonding structure;

two or more semiconductor light-emitting stacks, partitioned by a trench, for emitting original light, wherein each of the semiconductor light-emitting stacks is separated from a growth substrate and bonded to the light-impervious substrate through the bonding structure;

a wavelength-converting structure formed of a single layer continuously overlaying top and side surfaces of the semiconductor light-emitting stacks and top surface of the bonding structure under said trenches, the wavelength-converting structure having an outer surface being in contour conformity with the top and side surfaces of the semiconductor light-emitting stacks;

first electrical connections formed on the top surface of the light emitting stacks, the electrical connections penetrating through the wavelength-converting structure; and

a protection structure formed on top of the wavelength-converting structure, the protection structure including a plurality of optical layers wherein thicknesses of the plurality of optical layers increase with their respective distance from the semiconductor light emitting stacks.

2. The semiconductor light-emitting device of claim 1, further comprising second electrical connections formed on a same side of the light-impervious substrate.

3. The semiconductor light-emitting device of claim 1, wherein the light-impervious substrate includes a transparent substrate.

4. The semiconductor light-emitting device of claim 1, further comprising a diffuser contacting the wavelength-converting structure.