Method of fabricating vertical structure LEDs
DC
First Claim
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1. A semiconductor light-emitting device, comprising:
- a conductive support structure;
a semiconductor structure over the conductive support structure, the semiconductor structure having a first surface and a second surface, wherein the semiconductor structure comprises a first-type semiconductor layer, an active layer, and a second-type semiconductor layer, wherein the second surface is opposite the first surface, and wherein the first surface, relative to the second surface, is proximate to the conductive support structure;
a first electrode electrically connected to the first-type semiconductor layer, wherein the first electrode is arranged between the conductive support structure and the first surface of the semiconductor structure;
a second electrode electrically connected to the second-type semiconductor layer; and
a passivation layer contacting the second surface of the semiconductor structure, the passivation layer having a first length in contact with the first-type semiconductor layer and a second length in contact with the second-type semiconductor layer, wherein the second length is greater than the first length.
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Abstract
A method of fabricating semiconductor devices, such as GaN LEDs, on insulating substrates, such as sapphire. Semiconductor layers are produced on the insulating substrate using normal semiconductor processing techniques. Trenches that define the boundaries of the individual devices are then formed through the semiconductor layers and into the insulating substrate, beneficially by using inductive coupled plasma reactive ion etching. The trenches are then filled with an easily removed layer. A metal support structure is then formed on the semiconductor layers (such as by plating or by deposition) and the insulating substrate is removed. Electrical contacts, a passivation layer, and metallic pads are then added to the individual devices, and the individual devices are then diced out.
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Citations
43 Claims
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1. A semiconductor light-emitting device, comprising:
- a conductive support structure;
a semiconductor structure over the conductive support structure, the semiconductor structure having a first surface and a second surface, wherein the semiconductor structure comprises a first-type semiconductor layer, an active layer, and a second-type semiconductor layer, wherein the second surface is opposite the first surface, and wherein the first surface, relative to the second surface, is proximate to the conductive support structure;
a first electrode electrically connected to the first-type semiconductor layer, wherein the first electrode is arranged between the conductive support structure and the first surface of the semiconductor structure;
a second electrode electrically connected to the second-type semiconductor layer; and
a passivation layer contacting the second surface of the semiconductor structure, the passivation layer having a first length in contact with the first-type semiconductor layer and a second length in contact with the second-type semiconductor layer, wherein the second length is greater than the first length. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43)
- a conductive support structure;
Specification
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Litigation Data
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Current AssigneeSuzhou Lekin Semiconductor Company Limited
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Original AssigneeLG Electronics, Inc. (LG Corporation)
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InventorsYoo, Myung Cheol, Jeong, In-Kwon, Lee, Jong-Lam
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Primary Examiner(s)Mandala; Victor
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Application NumberUS12/797,335Publication NumberTime in Patent Office314 DaysField of Search257/79, 257/99, 257/103, 257/E33.025US Class Current257/99CPC Class CodesH01C 7/006 Thin film resistorsH01C 7/008 Thermistors H01C7/02 - H01C...H01L 27/0802 Resistors onlyH01L 28/20 ResistorsH01L 33/0025 comprising only AIIIBV comp...H01L 33/007 comprising nitride compoundsH01L 33/0093 Wafer bonding; Removal of t...H01L 33/0095 Post-treatment of devices, ...H01L 33/06 within the light emitting r...H01L 33/12 with a stress relaxation st...H01L 33/32 containing nitrogenH01L 33/36 characterised by the electr...H01L 33/38 with a particular shapeH01L 33/40 Materials thereforH01L 33/44 characterised by the coatin...H01L 33/62 Arrangements for conducting...Y10S 438/958 Passivation layerY10S 438/977 Thinning or removal of subs...
