Nitride semiconductor light emitting device and manufacturing method of the same
First Claim
1. A nitride semiconductor light emitting device comprising:
- a conductive substrate;
a p-type nitride semiconductor layer formed on the conductive substrate;
an active layer formed on the p-type nitride semiconductor layer,an n-type nitride semiconductor layer formed on the active layer;
n-electrode electrically connected to the n-type and p-type nitride semiconductor layers; and
an n-type ohmic contact layer disposed between the n-type nitride semiconductor layer and the n-electrode and comprising a first layer and a second layer, the first layer formed of an In-containing material, and the second layer disposed between the first layer and the n-electrode and formed of a transparent conductive oxide,wherein a surface of the n-type nitride semiconductor layer where the n-type ohmic contact layer is formed is an N-polar surface.
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Abstract
There is provided a nitride semiconductor light emitting device including: a light emitting structure including n-type and p-type nitride semiconductor layers and an active layer disposed therebetween; n- and p-electrodes electrically connected to the n-type and p-type nitride semiconductor layers, respectively; and an n-type ohmic contact layer disposed between the n-type nitride semiconductor layer and the n-electrode and including a first layer and a second layer, the first layer formed of an In-containing material, and the second layer disposed on the first layer and formed of a transparent conductive oxide. The nitride semiconductor light emitting device including the n-electrode exhibits high light transmittance and superior electrical characteristics. Further, the nitride semiconductor light emitting device can be manufactured by an optimal method to ensure superb optical and electrical characteristics.
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Citations
11 Claims
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1. A nitride semiconductor light emitting device comprising:
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a conductive substrate; a p-type nitride semiconductor layer formed on the conductive substrate; an active layer formed on the p-type nitride semiconductor layer, an n-type nitride semiconductor layer formed on the active layer; n-electrode electrically connected to the n-type and p-type nitride semiconductor layers; and an n-type ohmic contact layer disposed between the n-type nitride semiconductor layer and the n-electrode and comprising a first layer and a second layer, the first layer formed of an In-containing material, and the second layer disposed between the first layer and the n-electrode and formed of a transparent conductive oxide, wherein a surface of the n-type nitride semiconductor layer where the n-type ohmic contact layer is formed is an N-polar surface. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method of manufacturing a nitride light emitting device, the method comprising:
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depositing an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer sequentially to form a light emitting structure on a single crystal growth substrate; forming a conductive substrate on the p-type nitride semiconductor layer; removing the single crystal growth substrate from the light emitting structure; forming an n-type ohmic contact layer by forming a first layer made of an In-containing material on the exposed surface of the n-type nitride semiconductor layer and a second layer made of a transparent conductive oxide on the first layer; and forming an n-electrode on the second layer of the n-type ohmic contact layer; wherein a surface of the n-type nitride semiconductor layer where the n-type ohmic contact layer is formed is an N-polar surface. - View Dependent Claims (9, 10, 11)
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Specification