Nanowire-based device having isolated electrode pair
First Claim
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1. A nanowire-based device having isolated electrodes comprising:
- a substrate electrode having a crystal orientation;
a ledge electrode that is an epitaxial semiconductor, the epitaxial semiconductor being a selective, lateral epitaxial overgrowth (LEO) that mimics the crystal orientation of the substrate electrode; and
a nanowire bridging between respective surfaces of the substrate electrode and the ledge electrode.
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Abstract
A nanowire-based device includes the pair of isolated electrodes and a nanowire bridging between respective surfaces of the isolated electrodes of the pair. Specifically, the nanowire-based device having isolated electrodes comprises: a substrate electrode having a crystal orientation; a ledge electrode that is an epitaxial semiconductor having the crystal orientation of the substrate electrode; and a nanowire bridging between respective surfaces of the substrate electrode and the ledge electrode.
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Citations
18 Claims
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1. A nanowire-based device having isolated electrodes comprising:
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a substrate electrode having a crystal orientation; a ledge electrode that is an epitaxial semiconductor, the epitaxial semiconductor being a selective, lateral epitaxial overgrowth (LEO) that mimics the crystal orientation of the substrate electrode; and a nanowire bridging between respective surfaces of the substrate electrode and the ledge electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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18. A nanowire-based device having isolated electrodes comprising:
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a substrate electrode having a crystal orientation; a ledge electrode that is an epitaxial semiconductor having the crystal orientation of the substrate electrode; an isolation layer embedded between the substrate electrode and the ledge electrode to provide electrical isolation; and a nanowire bridging between respective surfaces of the substrate electrode and the ledge electrode.
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Specification