Push-pull memory cell configured for simultaneous programming of n-channel and p-channel non-volatile transistors
First Claim
1. In an array of push-pull memory cells arranged in a plurality of rows and columns, the array comprising a Vp line associated with each row of the array, a p-wordline associated with each row of the array, an n-wordline associated with each row of the array, a program wordline associated with each row of the array, a bit line associated with each column of the array, and a plurality of memory cells, each memory cell uniquely associated with a row in the array and a column in the array, each memory cell including a p-channel non-volatile transistor having a source coupled to the Vp line associated with its row, a drain, a floating gate and a control gate, the control gate coupled to the p-wordline associated with its row, a p-channel volatile transistor having a source coupled to the drain of the p-channel non-volatile transistor, a drain, and a control gate and a floating gate shorted together and coupled to the program wordline associated with its row, and an n-channel non-volatile transistor having a source coupled to the bit line associated with its column, a drain coupled to the drain of the p-channel volatile transistor, a floating gate and a control gate, the control gate coupled to an n-word line associated with its row, a method for simultaneously programming the n-channel and p-channel non-volatile transistors in a selected memory cell comprising:
- driving to 0 v the p-wordline and the n-wordline for any row in which programming of memory cells is to be inhibited;
driving to a positive voltage the p-wordline and the n-wordline for any row in which programming of memory cells is to be performed;
driving to a positive voltage the bit line for any column in which programming of memory cells is to be inhibited;
driving to a negative voltage the bit line for any column in which programming of memory cells is to be performed;
driving to one of 0 v and a negative voltage the program wordline for any row in which programming of memory cells is to be inhibited; and
driving to one of 0 v and a positive voltage the program wordline for any row in which programming of memory cells is to be performed.
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Abstract
A method of for programming a push-pull memory cell to simultaneously program a p-channel non-volatile transistor and an n-channel non-volatile transistor includes driving to 0v wordlines for any row in which programming of memory cells is to be inhibited; driving to a positive voltage wordlines any row in which programming of memory cells is to be performed; driving to a positive voltage the bitlines for any column in which programming of memory cells is to be inhibited; driving to a negative voltage the bitlines for any column in which programming of memory cells is to be performed; driving to one of 0v and a negative voltage a center wordline for any row in which programming of memory cells is to be inhibited; and driving to one of 0v and a positive voltage the center wordline for any row in which programming of memory cells is to be performed.
136 Citations
12 Claims
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1. In an array of push-pull memory cells arranged in a plurality of rows and columns, the array comprising a Vp line associated with each row of the array, a p-wordline associated with each row of the array, an n-wordline associated with each row of the array, a program wordline associated with each row of the array, a bit line associated with each column of the array, and a plurality of memory cells, each memory cell uniquely associated with a row in the array and a column in the array, each memory cell including a p-channel non-volatile transistor having a source coupled to the Vp line associated with its row, a drain, a floating gate and a control gate, the control gate coupled to the p-wordline associated with its row, a p-channel volatile transistor having a source coupled to the drain of the p-channel non-volatile transistor, a drain, and a control gate and a floating gate shorted together and coupled to the program wordline associated with its row, and an n-channel non-volatile transistor having a source coupled to the bit line associated with its column, a drain coupled to the drain of the p-channel volatile transistor, a floating gate and a control gate, the control gate coupled to an n-word line associated with its row, a method for simultaneously programming the n-channel and p-channel non-volatile transistors in a selected memory cell comprising:
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driving to 0 v the p-wordline and the n-wordline for any row in which programming of memory cells is to be inhibited; driving to a positive voltage the p-wordline and the n-wordline for any row in which programming of memory cells is to be performed; driving to a positive voltage the bit line for any column in which programming of memory cells is to be inhibited; driving to a negative voltage the bit line for any column in which programming of memory cells is to be performed; driving to one of 0 v and a negative voltage the program wordline for any row in which programming of memory cells is to be inhibited; and driving to one of 0 v and a positive voltage the program wordline for any row in which programming of memory cells is to be performed. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. In an array of push-pull memory cells arranged in a plurality of rows and columns and comprising a p-word line associated with each row of the array, an n-word line associated with each row of the array, a program-word line associated with each row of the array, a p-bit line associated with each column of the array, an n-bit line associated with each column of the array, a plurality of memory cells, each memory cell uniquely associated with a row in the array and a column in the array, each memory cell including a p-channel non-volatile transistor having a source coupled to the p-bit line associated with its column, a drain, a floating gate and a control gate, the control gate coupled to the p-word line associated with its row, a p-channel volatile transistor having a source coupled to the drain of the p-channel non-volatile transistor, a drain, and a control gate and a floating gate shorted together and coupled to the program-word line associated with its row, and an n-channel non-volatile transistor having a source coupled to the n-bit line associated with its column, a drain coupled to the drain of the p-channel volatile transistor, a floating gate and a control gate, the control gate coupled to the n-word line associated with its row, a method for simultaneously programming the n-channel and p-channel non-volatile transistors in a selected memory cell comprising:
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driving to 0 v the p-word line and the n-word line for any row in which programming of memory cells is to be inhibited; driving to a negative voltage the program wordline for any row in which programming of memory cells is to be inhibited; driving to a positive voltage the p-word line and the n-word line in any row in which programming of memory cells is to be performed; driving to 0 v the p-bitline for any column in which programming of memory cells is to be inhibited; driving to a positive voltage the n-bitline for any column in which programming of memory cells is to be inhibited; driving to 0 v the p-bitline for any column in which programming of memory cells is to be performed; driving to a negative voltage the n-bitline for any column in which programming of memory cells is to be performed; driving to a first negative voltage program wordline for any row in which programming of memory cells is to be inhibited; and driving to a second negative voltage more negative than the first negative voltage program wordline for any row in which programming of memory cells is to be performed. - View Dependent Claims (10, 11, 12)
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Specification