Semiconductor device and manufacturing method thereof

• US 7,932,521 B2
• Filed: 08/01/2008
• Issued: 04/26/2011
• Est. Priority Date: 09/29/2005
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Honda, Tatsuya, Akimoto, Kengo, Sone, Norihito
• Primary Examiner(s): EVERHART, CARIDAD
• Application Number:
  US12/184,407
• Publication Number:
  US 20080308797A1
• Time in Patent Office: 998 Days
• Field of Search: 257/43, 257/59, 257/E33.001, 257/E33.004, 257/E33.013, 257/E29.288, 257/E29.273, 257/E29.202, 257/E49.004, 257/72, 257/E26.004, 257/E25.004, 438/104
• US Class Current: 257/72
• CPC Class Codes: H01L 21/02164 the material being a silicon oxide, e.g. SiO2
• CPC Class Codes: H01L 21/0217 the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz H01L21/02126 and H01L21/0214 take precedence
• CPC Class Codes: H01L 21/02178 the material containing aluminium, e.g. Al2O3
• CPC Class Codes: H01L 21/02266 deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
• CPC Class Codes: H01L 21/02554 Oxides
• CPC Class Codes: H01L 21/02565 Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
• CPC Class Codes: H01L 21/02631 Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
• CPC Class Codes: H01L 21/02667 Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
• CPC Class Codes: H01L 21/428 using electromagnetic radiation, e.g. laser radiation
• CPC Class Codes: H01L 21/465 Chemical or electrical treatment, e.g. electrolytic etching to form insulating layers H01L21/469
• CPC Class Codes: H01L 21/477 Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering H01L21/38 - H01L21/449 and H01L21/461 - H01L21/475 take precedence
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/1285 using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
• CPC Class Codes: H01L 29/04 characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes characterised by physical imperfections H01L29/30
• CPC Class Codes: H01L 29/045 by their particular orientation of crystalline planes
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 29/78693 the semiconducting oxide being amorphous
• CPC Class Codes: H01L 29/78696 characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel H01L29/78612 takes precedence; transistors having a drain offset region or a lightly doped drain [LDD] H01L29/78621

Abstract

An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Claims

1. An active matrix EL display device comprising:

a thin film transistor over a substrate, the thin film transistor including;

a gate electrode;

an oxide semiconductor film adjacent to the gate electrode with an insulating film interposed therebetween; and

a pair of electrodes adjacent to the oxide semiconductor film, wherein each of the pair of electrodes comprises at least one of tungsten, molybdenum, platinum, and titanium; and

a light emitting element electrically connected to the thin film transistor, the light emitting element including;

a first electrode electrically connected to the thin film transistor;

a light emitting layer comprising an organic light emitting material formed over the first electrode; and

a second electrode formed over the light emitting layer,

wherein the oxide semiconductor film comprises an In—

Ga—

Zn—

O based oxide semiconductor.

2. The active matrix EL display device according to claim 1 further comprising an insulating layer covering a portion of the first electrode and having an opening portion to expose a portion of the first electrode therein,

wherein the opening portion has a curved side surface.

3. A television device having the active matrix EL display device according to claim 1.

4. The active matrix EL display device according to claim 1 wherein the first electrode is a cathode and the second electrode is an anode.

5. The active matrix EL display device according to claim 1 wherein the second electrode is transparent so that light emitted by the light emitting layer can be taken out to an outside of the active matrix EL display device through the second electrode.

6. The active matrix EL display device according to claim 1 wherein the first electrode is transparent so that light emitted by the light emitting layer can be taken out to an outside of the active matrix EL display device through the first electrode and the substrate.

7. The active matrix EL display device according to claim 1 wherein both of the first electrode and the second electrode are transparent so that light emitted by the light emitting layer can be taken out to an outside of the active matrix EL display device both through the first electrode and the second electrode.

8. The active matrix EL display device according to claim 1, wherein the insulating film comprises at least one of aluminum oxide, aluminum nitride, titanium oxide, and zirconium oxide.

9. The active matrix EL display device according to claim 1, wherein a thickness of the oxide semiconductor film is 200 nm or less.

10. The active matrix EL display device according to claim 1, wherein the In—

Ga—

Zn—

O based oxide semiconductor is an In—

Ga—

Zn—

O based amorphous oxide semiconductor.

11. The active matrix EL display device according to claim 1, further comprising a passivation film in contact with the oxide semiconductor film, wherein the passivation film comprises at least one of aluminum oxide and aluminum oxynitride.

12. The active matrix EL display device according to claim 1, wherein the oxide semiconductor film comprises oxide semiconductor in a state in which both amorphous state and polycrystalline state exist.

13. The active matrix EL display device according to claim 1, wherein at least a channel forming region of the oxide semiconductor film is substantially intrinsic.

14. An active matrix EL display device comprising:

a thin film transistor over a substrate, the thin film transistor including;

a gate electrode;

an oxide semiconductor film adjacent to the gate electrode with an insulating film interposed therebetween; and

a pair of electrodes formed adjacent to the oxide semiconductor film wherein each of the pair of electrodes comprises metal nitride, the metal being any one of tungsten, molybdenum, platinum, and titanium;

a light emitting element electrically connected to the thin film transistor, the light emitting element including;

a first electrode electrically connected to the thin film transistor;

a light emitting layer comprising an organic light emitting material formed over the first electrode; and

a second electrode formed over the light emitting layer,

wherein the oxide semiconductor film comprises an In—

Ga—

Zn—

O based oxide semiconductor.

15. The active matrix EL display device according to claim 14 wherein the In—

Ga—

Zn—

O based oxide semiconductor is an In—

Ga—

Zn—

O based amorphous oxide semiconductor.

16. The active matrix EL display device according to claim 14, further comprising a passivation film in contact with the oxide semiconductor film, wherein the passivation film comprises at least one of aluminum oxide and aluminum oxynitride.

17. The active matrix EL display device according to claim 14, wherein the insulating film comprises at least one of aluminum oxide, aluminum nitride, titanium oxide, and zirconium oxide.

18. The active matrix EL display device according to claim 14, wherein a thickness of the oxide semiconductor film is 200 nm or less.

19. The active matrix EL display device according to claim 14, wherein the oxide semiconductor film comprises oxide semiconductor in a state in which both amorphous state and polycrystalline state exist.

20. The active matrix EL display device according to claim 14, wherein at least a channel forming region of the oxide semiconductor film is substantially intrinsic.

21. An active matrix EL display device comprising:

a thin film transistor over a substrate, the thin film transistor including;

a gate electrode;

an oxide semiconductor film adjacent to the gate electrode with an insulating film interposed therebetween; and

a pair of transparent conductive oxide layers adjacent to the oxide semiconductor film; and

a light emitting element electrically connected to the thin film transistor, the light emitting element including;

a first electrode electrically connected to the thin film transistor;

a light emitting layer comprising an organic light emitting material formed over the first electrode; and

a second electrode formed over the light emitting layer,

wherein the oxide semiconductor film comprises an In—

Ga—

Zn—

O based oxide semiconductor.

22. The active matrix EL display device according to claim 21 wherein the In—

Ga—

Zn—

O based oxide semiconductor is an In—

Ga—

Zn—

O based amorphous oxide semiconductor.

23. The active matrix EL display device according to claim 21, further comprising a passivation film in contact with the oxide semiconductor film, wherein the passivation film comprises at least one of aluminum oxide and aluminum oxynitride.

24. The active matrix EL display device according to claim 21, wherein the insulating film comprises at least one of aluminum oxide, aluminum nitride, titanium oxide, and zirconium oxide.

25. The active matrix EL display device according to claim 21, wherein a thickness of the oxide semiconductor film is 200 nm or less.

26. The active matrix EL display device according to claim 21, wherein the oxide semiconductor film comprises oxide semiconductor in a state in which both amorphous state and polycrystalline state exist.

27. The active matrix EL display device according to claim 21, wherein at least a channel forming region of the oxide semiconductor film is substantially intrinsic.

28. An active matrix EL display device comprising:

a first thin film transistor formed over a substrate, the first thin film transistor including;

a first gate electrode;

a first oxide semiconductor film adjacent to the first gate electrode with a first insulating film interposed therebetween, and

a pair of electrodes adjacent to the first oxide semiconductor film wherein each of the pair of electrodes comprises at least one of tungsten, molybdenum, platinum, and titanium;

a light emitting element electrically connected to the first thin film transistor, the light emitting element including;

a first electrode electrically connected to the first thin film transistor;

a light emitting layer comprising an organic light emitting material formed over the first electrode; and

a second electrode formed over the light emitting layer;

a scanning line driver circuit operationally connected to the first thin film transistor; and

a signal line driver circuit operationally connected to the first thin film transistor;

wherein at least one of the scanning line driver circuit and the signal line driver circuit comprises a second thin film transistor over the substrate, the second thin film transistor including;

a second gate electrode; and

a second oxide semiconductor film adjacent to the second gate electrode with a second insulating film interposed therebetween,

wherein each of the first oxide semiconductor film and the second oxide semiconductor film comprises an In—

Ga—

Zn—

O based oxide semiconductor.

29. The active matrix EL display device according to claim 28 wherein the In—

Ga—

Zn—

O based oxide semiconductor is an In—

Ga—

Zn—

O based amorphous oxide semiconductor.

30. The active matrix EL display device according to claim 28, wherein each of the first insulating film and the second insulating film comprises at least one of aluminum oxide, aluminum nitride, titanium oxide, and zirconium oxide.

31. The active matrix EL display device according to claim 28, wherein each of the first oxide semiconductor film and the second oxide semiconductor film comprises oxide semiconductor in a state in which both amorphous state and polycrystalline state exist.

32. The active matrix EL display device according to claim 28, wherein a thickness of each of the first oxide semiconductor film and the second oxide semiconductor film is 200 nm or less.

33. The active matrix EL display device according to claim 28 further comprising a passivation film in contact with the first oxide semiconductor film, wherein the passivation film comprises at least one of aluminum oxide and aluminum oxynitride.

34. The active matrix EL display device according to claim 28, wherein each of the first oxide semiconductor film and the second oxide semiconductor film comprises oxide semiconductor in a state in which both amorphous state and polycrystalline state exist.

35. The active matrix EL display device according to claim 28, wherein at least a channel forming region of the first oxide semiconductor film and at least a channel forming region of the second oxide semiconductor film are substantially intrinsic.

36. An active matrix EL display device comprising:

a first thin film transistor formed over a substrate, the first thin film transistor including;

a first gate electrode;

a first oxide semiconductor film adjacent to the first gate electrode with a first insulating film interposed therebetween; and

a pair of electrodes adjacent to the first oxide semiconductor film wherein each of the pair of electrodes comprises metal nitride, the metal being any one of tungsten, molybdenum, platinum, and titanium;

a light emitting element electrically connected to the first thin film transistor, the light emitting element including;

a first electrode electrically connected to the first thin film transistor;

a light emitting layer comprising an organic light emitting material formed over the first electrode; and

a second electrode formed over the light emitting layer; and

a scanning line driver circuit operationally connected to the first thin film transistor; and

a signal line driver circuit operationally connected to the first thin film transistor,

wherein at least one of the scanning line driver circuit and the signal line driver circuit comprises a second thin film transistor over the substrate, the second thin film transistor including;

a second gate electrode;

a second oxide semiconductor film adjacent to the second gate electrode with a second insulating film interposed therebetween,

wherein each of the first oxide semiconductor film and the second oxide semiconductor film comprises an In—

Ga—

Zn—

O based oxide semiconductor.

37. The active matrix EL display device according to claim 36 wherein the In—

Ga—

Zn—

O based oxide semiconductor is an In—

Ga—

Zn—

O based amorphous oxide semiconductor.

38. The active matrix EL display device according to claim 36, wherein each of the first insulating film and the second insulating film comprise at least one of aluminum oxide, aluminum nitride, titanium oxide, and zirconium oxide.

39. The active matrix EL display device according to claim 36, wherein each of the first oxide semiconductor film and the second oxide semiconductor film comprises oxide semiconductor in a state in which both amorphous state and polycrystalline state exist.

40. The active matrix EL display device according to claim 36, wherein a thickness of each of the first oxide semiconductor film and the second oxide semiconductor film is 200 nm or less.

41. The active matrix EL display device according to claim 36 further comprising a passivation film in contact with the first oxide semiconductor film, wherein the passivation film comprises at least one of aluminum oxide and aluminum oxynitride.

42. The active matrix EL display device according to claim 36, wherein at least a channel forming region of the first oxide semiconductor film and at least a channel forming region of the second oxide semiconductor film are substantially intrinsic.

43. An active matrix EL display device comprising:

a first thin film transistor formed over a substrate, the first thin film transistor including;

a first gate electrode over the substrate;

a first oxide semiconductor film adjacent to the first gate electrode with a first insulating film interposed therebetween; and

a pair of transparent conductive oxide layers adjacent to the first oxide semiconductor film;

a light emitting element electrically connected to the first thin film transistor, the light emitting element including;

a first electrode electrically connected to the first thin film transistor one of the pair of electrodes;

a light emitting layer comprising an organic light emitting material formed over the first electrode; and

a second electrode formed over the light emitting layer,

a scanning line driver circuit operationally connected to the first thin film transistor; and

a signal line driver circuit operationally connected to the first thin film transistor,

wherein at least one of the scanning line driver circuit and the signal line driver circuit comprises a second thin film transistor over the substrate, the second thin film transistor including;

a second gate electrode; and

a second oxide semiconductor film adjacent to the second gate electrode with a second insulating film interposed therebetween,

wherein each of the first oxide semiconductor film and the second oxide semiconductor film comprises an In—

Ga—

Zn—

O based oxide semiconductor.

44. The active matrix EL display device according to claim 43, wherein each of the first insulating film and the second insulating film comprises at least one of aluminum oxide, aluminum nitride, titanium oxide, and zirconium oxide.

45. The active matrix EL display device according to claim 43, wherein a thickness of each of the first oxide semiconductor film and the second oxide semiconductor film is 200 nm or less.

46. The active matrix EL display device according to claim 43, wherein the In—

Ga—

Zn—

O based oxide semiconductor is an In—

Ga—

Zn—

O based amorphous oxide semiconductor.

47. The active matrix EL display device according to claim 43 further comprising a passivation film in contact with the first oxide semiconductor film, wherein the passivation film comprises at least one of aluminum oxide and aluminum oxynitride.

48. The active matrix EL display device according to claim 43, wherein at least a channel forming region of the first oxide semiconductor film and at least a channel forming region of the second oxide semiconductor film are substantially intrinsic.

49. An active matrix EL display device comprising:

a thin film transistor over a substrate, the thin film transistor including;

a gate electrode;

an oxide semiconductor film adjacent to the gate electrode with an insulating film interposed therebetween;

a pair of n-type oxide semiconductor layers adjacent to the oxide semiconductor film; and

a pair of electrodes adjacent to the pair of n-type oxide semiconductor layers, wherein each of the pair of electrodes comprises at least one of tungsten, molybdenum, platinum, and titanium; and

a light emitting element electrically connected to the thin film transistor, the light emitting element including;

a first electrode electrically connected to the thin film transistor;

a light emitting layer comprising an organic light emitting material formed over the first electrode; and

a second electrode formed over the light emitting layer,

wherein one of the pair of n-type oxide semiconductor layers is between one of the pair of electrodes and the oxide semiconductor film,

wherein the other of the pair of n-type oxide semiconductor layers is between the other of the pair of electrodes and the oxide semiconductor film, and

wherein the oxide semiconductor film comprises an In—

Ga—

Zn—

O based oxide semiconductor.

50. The active matrix EL display device according to claim 49, wherein the In—

Ga—

Zn—

O based oxide semiconductor is an In—

Ga—

Zn—

O based amorphous oxide semiconductor.

51. The active matrix EL display device according to claim 49 further comprising a passivation film in contact with the oxide semiconductor film, wherein the passivation film comprises at least one of aluminum oxide and aluminum oxynitride.

52. The active matrix EL display device according to claim 49, wherein the insulating film comprises at least one of aluminum oxide, aluminum nitride, titanium oxide, and zirconium oxide.

53. The active matrix EL display device according to claim 49, wherein the oxide semiconductor film comprises oxide semiconductor in a state in which both amorphous state and polycrystalline state exist.

54. The active matrix EL display device according to claim 49, wherein a thickness of the oxide semiconductor film is 200 nm or less.

55. The active matrix EL display device according to claim 49, wherein at least a channel forming region of the oxide semiconductor film is substantially intrinsic.

56. An active matrix EL display device comprising:

a thin film transistor over a substrate, the thin film transistor comprising;

a gate electrode;

an oxide semiconductor film adjacent to the gate electrode with an insulating film interposed therebetween;

a pair of n-type oxide semiconductor layers adjacent to the oxide semiconductor film; and

a pair of electrodes adjacent to the pair of n-type oxide semiconductor layers, wherein each of the pair of electrodes comprises a metal nitride, the metal being any one of tungsten, molybdenum, platinum, and titanium; and

a light emitting element electrically connected to the thin film transistor, the light emitting element including;

a first electrode electrically connected to the thin film transistor;

a light emitting layer comprising an organic light emitting material formed over the first electrode; and

a second electrode formed over the light emitting layer,

wherein one of the pair of n-type oxide semiconductor layers is between one of the pair of electrodes and the oxide semiconductor film,

wherein the other of the pair of n-type oxide semiconductor layers is between the other of the pair of electrodes and the oxide semiconductor film, and

wherein the oxide semiconductor film comprises an In—

Ga—

Zn—

O based oxide semiconductor.

57. The active matrix EL display device according to claim 56, wherein the In—

Ga—

Zn—

O based oxide semiconductor is an In—

Ga—

Zn—

O based amorphous oxide semiconductor.

58. The active matrix EL display device according to claim 56 further comprising a passivation film in contact with the oxide semiconductor film, wherein the passivation film comprises at least one of aluminum oxide and aluminum oxynitride.

59. The active matrix EL display device according to claim 56, wherein the insulating film comprises at least one of aluminum oxide, aluminum nitride, titanium oxide, and zirconium oxide.

60. The active matrix EL display device according to claim 56, wherein the oxide semiconductor film comprises oxide semiconductor in a state in which both amorphous state and polycrystalline state exist.

61. The active matrix EL display device according to claim 56, wherein a thickness of the oxide semiconductor film is 200 nm or less.

62. The active matrix EL display device according to claim 56, wherein at least a channel forming region of the oxide semiconductor film is substantially intrinsic.

63. An active matrix EL display device comprising:

a thin film transistor over a substrate, the thin film transistor comprising;

a gate electrode;

an oxide semiconductor film adjacent to the gate electrode with an insulating film interposed therebetween;

a pair of n-type oxide semiconductor layers adjacent to the oxide semiconductor film; and

a pair of transparent conductive oxide layers adjacent to the pair of n-type oxide semiconductor layers; and

a light emitting element electrically connected to the thin film transistor, the light emitting element including;

a first electrode electrically connected to the thin film transistor;

a light emitting layer comprising an organic light emitting material formed over the first electrode; and

a second electrode formed over the light emitting layer,

wherein one of the pair of n-type oxide semiconductor layers is between one of the pair of transparent conductive oxide layers and the oxide semiconductor film,

wherein the other of the pair of n-type oxide semiconductor layers is between the other of the pair of transparent conductive oxide layers and the oxide semiconductor film, and

wherein the oxide semiconductor film comprises an In—

Ga—

Zn—

O based oxide semiconductor.

64. The active matrix EL display device according to claim 63, wherein the In—

Ga—

Zn—

O based oxide semiconductor is an In—

Ga—

Zn—

O based amorphous oxide semiconductor.

65. The active matrix EL display device according to claim 63 further comprising a passivation film in contact with the oxide semiconductor film, wherein the passivation film comprises at least one of aluminum oxide and aluminum oxynitride.

66. The active matrix EL display device according to claim 63, wherein the insulating film comprises at least one of aluminum oxide, aluminum nitride, titanium oxide, and zirconium oxide.

67. The active matrix EL display device according to claim 63, wherein the oxide semiconductor film comprises oxide semiconductor in a state in which both amorphous state and polycrystalline state exist.

68. The active matrix EL display device according to claim 63, wherein a thickness of the oxide semiconductor film is 200 nm or less.

69. The active matrix EL display device according to claim 63, wherein at least a channel forming region of the oxide semiconductor film is substantially intrinsic.