×

Power rectifiers and method of making same

  • US 7,932,536 B2
  • Filed: 09/10/2008
  • Issued: 04/26/2011
  • Est. Priority Date: 03/09/2007
  • Status: Active Grant
First Claim
Patent Images

1. A method of manufacturing a semiconductor rectifier device, the method comprising:

  • depositing an N-drift region on an N++ substrate;

    implanting boron into the N-drift region to create a P-body layer;

    forming a plurality of trenches within the P-body layer, the trenches forming a plurality of P-body regions;

    forming a dielectric layer within each trench of the plurality of trenches;

    depositing conductive gate material to fill a remaining volume within each trench of the plurality of trenches;

    etching back the conductive gate material to form a planar surface above the plurality of P-body regions;

    depositing a layer of titanium and a layer of titanium nitride on the planar surface;

    annealing to create a layer of titanium silicide at an interface between the plurality of P-body regions and the titanium layer, and in accordance therewith, forming a δ

    p++ layer.

View all claims
  • 2 Assignments
Timeline View
Assignment View
    ×
    ×