Process-variation tolerant diode, standard cells including the same, tags and sensors containing the same, and methods for manufacturing the same

• US 7,932,537 B2
• Filed: 04/15/2009
• Issued: 04/26/2011
• Est. Priority Date: 12/07/2005
• Status: Active Grant

• Current Assignee: Ensurge Micropower ASA
• Original Assignee: Kovio Incorporated (Ensurge Micropower ASA)
• Inventors: Smith, Patrick, Subramanian, Vivek
• Primary Examiner(s): Pham; Thanh V
• Application Number:
  US12/424,509
• Publication Number:
  US 20090195289A1
• Time in Patent Office: 741 Days
• Field of Search: 257/46, 257/105, 257/121, 257/571, 257/910, 257/E29.195, 438/141
• US Class Current: 257/121
• CPC Class Codes: H01L 27/1285 using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
• CPC Class Codes: H01L 27/1288 employing particular masking sequences or specially adapted masks, e.g. half-tone mask
• CPC Class Codes: H01L 27/1292 using liquid deposition, e.g. printing
• CPC Class Codes: H01L 29/86 controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
• CPC Class Codes: Y10S 257/91 Diode arrays, e.g. diode read-only memory array

Abstract

Process variation-tolerant diodes and diode-connected thin film transistors (TFTs), printed or patterned structures (e.g., circuitry) containing such diodes and TFTs, methods of making the same, and applications of the same for identification tags and sensors are disclosed. A patterned structure comprising a complementary pair of diodes or diode-connected TFTs in series can stabilize the threshold voltage (V_t) of a diode manufactured using printing or laser writing techniques. The present invention advantageously utilizes the separation between the V_t of an NMOS TFT (V_tn) and the V_t of a PMOS TFT (V_tp) to establish and/or improve stability of a forward voltage drop across a printed or laser-written diode. Further applications of the present invention relate to reference voltage generators, voltage clamp circuits, methods of controlling voltages on related or differential signal transmission lines, and RFID and EAS tags and sensors.

Claims

1. Complementary diodes, comprising:

a) a first patterned semiconductor layer on a substrate, the first patterned semiconductor layer having a first conductivity type;

b) a second patterned semiconductor layer on the substrate, the second patterned semiconductor layer having a second conductivity type;

c) a first patterned gate structure on the first patterned semiconductor layer and a second patterned gate structure on the second patterned semiconductor layer,

d) a patterned insulator layer over the first and second patterned semiconductor layers, the first and second patterned gate structures, and the substrate; and

e) a first patterned metal layer on the patterned insulator layer, electrically connecting the first and second patterned semiconductor layers with the first and second patterned gate structures.

2. The complementary diodes of claim 1, wherein the first patterned semiconductor layer comprises a printed or laser written first semiconductor composition, and the second patterned semiconductor layer comprises a printed or laser written second semiconductor composition.

3. The complementary diodes of claim 1, wherein the first patterned metal layer comprises a printed metal composition.

4. The complementary diodes of claim 1, wherein the patterned gate structures comprise a second patterned metal layer on a patterned gate dielectric layer.

5. The complementary diodes of claim 1, wherein the patterned gate structures comprise a printed or laser written metal composition on a gate dielectric layer.

6. The complementary diodes of claim 1, wherein said first patterned gate structure comprises a semiconductor layer having a first conductivity type on a first gate dielectric layer, and said second patterned gate structure comprises a semiconductor layer having a second conductivity type on a second gate dielectric layer.

7. Complementary diodes, comprising:

a) a first patterned semiconductor layer on a substrate, the first patterned semiconductor layer having a first conductivity type;

b) a second patterned semiconductor layer on the substrate, the second patterned semiconductor layer having a second conductivity type;

c) a third patterned semiconductor layer on the first patterned semiconductor layer;

d) a fourth patterned semiconductor layer on the second patterned semiconductor layer;

e) a patterned insulator layer over the first, second, third and fourth patterned semiconductor layers and the substrate; and

f) a patterned metal layer on the patterned insulator layer, electrically connecting the third and fourth patterned semiconductor layers.

8. The complementary diodes of claim 7, wherein said third patterned semiconductor layer has a different mobility characteristic relative to said first patterned semiconductor layer, and said fourth patterned semiconductor layer has a different mobility characteristic relative to said second patterned semiconductor layer.

9. The complementary diodes of claim 7, wherein the first patterned semiconductor layer comprises a printed or laser written first semiconductor composition, and the second patterned semiconductor layer comprises a printed or laser written second semiconductor composition.

10. The complementary diodes of claim 7, wherein the third patterned semiconductor layer comprises a printed or laser written third semiconductor composition, and the fourth patterned semiconductor layer comprises a printed or laser written a fourth semiconductor composition.

11. The complementary diodes of claim 7, wherein the patterned metal layer comprises a printed first metal composition.