Structure and method for forming power devices with high aspect ratio contact openings

• US 7,932,556 B2
• Filed: 12/12/2008
• Issued: 04/26/2011
• Est. Priority Date: 12/14/2007
• Status: Active Grant

• Current Assignee: Semiconductor Components Industries LLC (ON Semiconductor Corporation)
• Original Assignee: Fairchild Semiconductor Corporation (ON Semiconductor Corporation)
• Inventors: Pan, James
• Primary Examiner(s): Pert; Evan
• Assistant Examiner(s): REAMES, MATTHEW L
• Application Number:
  US12/333,597
• Publication Number:
  US 20090189218A1
• Time in Patent Office: 865 Days
• Field of Search: 257/330, 257/E29.262, 438/270
• US Class Current: 257/330
• CPC Class Codes: H01L 29/0653 adjoining the input or output region of a field-effect device, e.g. the source or drain region
• CPC Class Codes: H01L 29/1095 Body region, i.e. base region, of DMOS transistors or IGBTs cell layout H01L29/0696
• CPC Class Codes: H01L 29/407 Recessed field plates, e.g. trench field plates, buried field plates
• CPC Class Codes: H01L 29/41766 with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor H01L29/41733 - H01L29/41758 take precedence
• CPC Class Codes: H01L 29/456 on silicon
• CPC Class Codes: H01L 29/66719 With a step of forming an insulating sidewall spacer
• CPC Class Codes: H01L 29/66727 with a step of recessing the source electrode
• CPC Class Codes: H01L 29/66734 with a step of recessing the gate electrode, e.g. to form a trench gate electrode
• CPC Class Codes: H01L 29/7802 Vertical DMOS transistors, i.e. VDMOS transistors
• CPC Class Codes: H01L 29/7813 with trench gate electrode, e.g. UMOS transistors trench gate electrodes per se H01L29/4236

Abstract

A field effect transistor (FET) includes body regions of a first conductivity type over a semiconductor region of a second conductivity type. Source regions of the second conductivity type extend over the body regions. Gate electrodes extend adjacent to but are insulated from the body regions by a gate dielectric layer. Contact openings extend into the body regions between adjacent gate electrodes. A seed layer extends along the bottom of each contact opening. The seed layer serves as a nucleation site for promoting growth of conductive fill material. A conductive fill material fills a lower portion of each contact opening. An interconnect layer fills an upper portion of each contact opening and is in direct contact with the conductive fill material. The interconnect layer is also in direct contact with corresponding source regions along upper sidewalls of the contact openings.

Claims

1. A field effect transistor (FET), comprising:

body regions of a first conductivity type over a semiconductor region of a second conductivity type, the body regions forming p-n junctions with the semiconductor region;

source regions of the second conductivity type over the body regions, the source regions forming p-n junctions with the body regions;

gate electrodes extending adjacent to but being insulated from the body regions by a gate dielectric;

contact openings extending into the body regions between adjacent gate electrodes;

a seed layer extending along a bottom of each contact opening, the seed layer serving as a nucleation site for promoting growth of conductive fill material;

a conductive fill material filling a lower portion of each contact opening, wherein an upper surface of the conductive fill material is below a bottom surface of the source regions; and

an interconnect layer filling an upper portion of each contact opening and being in direct contact with the conductive fill material, the interconnect layer also being in direct contact with corresponding source regions along upper sidewalls of the contact openings.

2. The FET of claim 1 further comprising dielectric spacers lining lower sidewalls of each contact opening, the dielectric spacers preventing the conductive fill material from directly contacting the body regions along lower sidewalls of the contact openings.

3. The FET of claim 1 further comprising a heavy body region of the first conductivity type extending in each body region along the bottom of each contact opening, the seed layer being in direct contact with the heavy body region.

4. The FET of claim 1, wherein each gate electrode is disposed in a trench extending adjacent the body regions and terminating within the semiconductor region.

5. The FET of claim 4, wherein each trench further includes a shield electrode disposed below the gate electrode, the gate and shield electrodes being insulated from one another by an inter-electrode dielectric layer.

6. The FET of claim 4, wherein each trench includes a thick bottom dielectric extending along the bottom of the trench below the gate electrode.

7. The FET of claim 1, wherein the gate electrodes extend laterally over the semiconductor and body regions and overlap the source regions.

8. The FET of claim 1, wherein top surfaces of the source regions are fully covered by dielectric material such that the interconnect layer makes direct contact with the source regions only along upper sidewalls of the contact openings.

9. A method of forming a field effect transistor (FET), comprising:

forming body regions of a first conductivity type in a semiconductor region of a second conductivity type, the body regions forming p-n junctions with the semiconductor region;

forming gate electrodes adjacent to but insulated from the body regions;

forming source regions of the second conductivity type in the body regions, the source regions forming p-n junctions with the body regions;

forming contact openings extending into the body regions;

forming a seed layer extending along a bottom of each contact opening;

filling a lower portion of each contact opening with a conductive fill material, wherein the seed layer serves as a nucleation site for promoting growth of the conductive fill material and an upper surface of the conductive fill material is below a bottom surface of the source regions; and

forming an interconnect layer filling an upper portion of each contact opening and being in direct contact with the conductive fill material, the interconnect layer also being in direct contact with corresponding source regions along upper sidewalls of the contact openings.

10. The method of claim 9 further comprising:

prior to filling the lower portion of each contact openings, forming dielectric spacers lining sidewalls of each contact opening.

11. The method of claim 9 further comprising:

prior to forming the seed layer, forming a heavy body region of the first conductivity type in each body region along the bottom of each contact opening.

12. The method of claim 9 further comprising:

forming trenches extending into semiconductor regions, the trenches housing the gate electrodes.

13. The method of claim 12 further comprising:

before forming the gate electrodes;

forming a shield dielectric layer lining lower sidewalls and bottom of each trench;

forming a shield electrode in a lower portion of each trench; and

forming an inter-electrode dielectric layer in each trench over the shield electrode.

14. The method of claim 12 further comprising:

before forming the gate electrode, forming a thick bottom dielectric extending along the bottom of the trench.

15. The method of claim 9, wherein the gate electrodes extend laterally over the semiconductor and body regions and overlap the source regions.

16. The method of claim 9 further comprising:

forming a dielectric cap layer over the gate electrodes and the source regions, the dielectric cap layer fully covering top surfaces of the source regions such that the interconnect layer makes direct contact with the source regions only along upper trench sidewalls of the contact openings.

17. The method of claim 9, wherein the step of filling a lower portion of each contact opening is carried out using electro-less plating.

18. The method of claim 9, wherein the seed layer comprises silicide.

19. The method of claim 9, wherein the step of forming a seed layer comprises:

forming dielectric spacers along sidewalls of each contact opening;

forming a metallic layer lining the dielectric spacers and extending along the bottom of each contact opening, the metallic layer being in direct contact with the body region along the bottom of each contact opening;

reacting the metallic layer with the body region to thereby form a silicide layer along the bottom of the trench; and

removing the un-reacted portions of the metallic layer.

20. The method of claim 19 further comprising:

after the step of filling a lower portion of each contact opening, removing exposed portions of the dielectric spacers to thereby expose vertical surfaces of the source regions along upper sidewalls of each contact opening.