Semiconductor device sealed in a resin section and method for manufacturing the same

• US 7,932,616 B2
• Filed: 04/04/2008
• Issued: 04/26/2011
• Est. Priority Date: 04/04/2007
• Status: Active Grant

• Current Assignee: Cypress Semiconductor Corporation (Infineon Technologies AG)
• Original Assignee: Spansion LLC (Infineon Technologies AG)
• Inventors: Meguro, Kouichi
• Primary Examiner(s): Sefer, A.
• Assistant Examiner(s): Nguyen, Dilinh P
• Application Number:
  US12/098,248
• Publication Number:
  US 20090020890A1
• Time in Patent Office: 1,117 Days
• Field of Search: 257/678, 257/693, 257730-731, 257/733, 257/773, 257/774, 257782-783, 257/786, 257/787, 257/778, 257/686, 257/777, 257/E23.169, 257/E23.175, 257/E23.015, 257/E23.02, 257/E23.024, 257/E23.141
• US Class Current: 257/786
• CPC Class Codes: H01L 21/304 Mechanical treatment, e.g. grinding, polishing, cutting H01L21/30625 takes precedence
• CPC Class Codes: H01L 21/568 Temporary substrate used as encapsulation process aid H01L21/4832 and H01L21/566 take precedence
• CPC Class Codes: H01L 21/6835 using temporarily an auxiliary support
• CPC Class Codes: H01L 21/76898 formed through a semiconductor substrate
• CPC Class Codes: H01L 21/78 with subsequent division of the substrate into plural individual devices cutting to change the surface-physical characteristics or shape of semiconductor bodies H01L21/304
• CPC Class Codes: H01L 2221/68345 used as a support during the manufacture of self supporting substrates
• CPC Class Codes: H01L 2221/68372 used to support a device or wafer when forming electrical connections thereto when forming bonding pads H01L24/03; when forming bump connectors H01L24/11; when forming layer connectors H01L24/27
• CPC Class Codes: H01L 2221/68377 with parts of the auxiliary support remaining in the finished device
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/04105 Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
• CPC Class Codes: H01L 2224/05554 being square
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/05647 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/12105 Bump connectors formed on an encapsulation of the semiconductor or solid-state body, e.g. bumps on chip-scale packages
• CPC Class Codes: H01L 2224/13147 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/16054 being rectangular or square
• CPC Class Codes: H01L 2224/16145 the bodies being stacked
• CPC Class Codes: H01L 2224/16147 the bump connector connecting to a bonding area disposed in a recess of the surface
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/16227 the bump connector connecting to a bond pad of the item
• CPC Class Codes: H01L 2224/1713 : Square or rectangular array
• CPC Class Codes: H01L 2224/18 : High density interconnect [HDI] connectors; Manufacturing methods related thereto
• CPC Class Codes: H01L 2224/32225 : the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/45099 : Material
• CPC Class Codes: H01L 2224/48091 : Arched
• CPC Class Codes: H01L 2224/48096 : the kinked part being in proximity to the bonding area on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/48145 : the bodies being stacked
• CPC Class Codes: H01L 2224/48227 : connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48237 : connecting the wire to a die pad of the item
• CPC Class Codes: H01L 2224/48463 : the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
• CPC Class Codes: H01L 2224/4847 : the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
• CPC Class Codes: H01L 2224/49112 : the connectors connecting a common bonding area on the semiconductor or solid-state body to different bonding areas outside the body, e.g. diverging wires
• CPC Class Codes: H01L 2224/49173 : Radial fan-out arrangements
• CPC Class Codes: H01L 2224/73265 : Layer and wire connectors
• CPC Class Codes: H01L 2224/78 : Apparatus for connecting with wire connectors
• CPC Class Codes: H01L 2224/85001 : involving a temporary auxiliary member not forming part of the bonding apparatus, e.g. removable or sacrificial coating, film or substrate
• CPC Class Codes: H01L 2225/06506 : Wire or wire-like electrical connections between devices
• CPC Class Codes: H01L 2225/0651 : Wire or wire-like electrical connections from device to substrate
• CPC Class Codes: H01L 2225/06513 : Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
• CPC Class Codes: H01L 2225/06517 : Bump or bump-like direct electrical connections from device to substrate
• CPC Class Codes: H01L 2225/06548 : Conductive via connections through the substrate, container, or encapsulation
• CPC Class Codes: H01L 2225/06568 : the devices decreasing in size, e.g. pyramidical stack
• CPC Class Codes: H01L 2225/1023 : the support being an insulating substrate
• CPC Class Codes: H01L 2225/1035 : the device being entirely enclosed by the support, e.g. high-density interconnect [HDI]
• CPC Class Codes: H01L 2225/1058 : Bump or bump-like electrical connections, e.g. balls, pillars, posts
• CPC Class Codes: H01L 23/481 : Internal lead connections, e.g. via connections, feedthrough structures
• CPC Class Codes: H01L 24/11 : Manufacturing methods for bumps on insulating substrates H01L21/4853
• CPC Class Codes: H01L 24/16 : of an individual bump connector
• CPC Class Codes: H01L 24/17 : of a plurality of bump connectors
• CPC Class Codes: H01L 24/18 : High density interconnect [HDI] connectors; Manufacturing methods related thereto interconnection structure between a plurality of semiconductor chips H01L23/5389
• CPC Class Codes: H01L 24/19 : Manufacturing methods of high density interconnect preforms
• CPC Class Codes: H01L 24/48 : of an individual wire connector
• CPC Class Codes: H01L 24/49 : of a plurality of wire connectors
• CPC Class Codes: H01L 24/73 : Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 24/82 : by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI] interconnection structure between a plurality of semiconductor chips H01L23/5389
• CPC Class Codes: H01L 24/85 : using a wire connector wire bonding in general B23K20/004
• CPC Class Codes: H01L 24/91 : Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L24/80 - H01L24/90
• CPC Class Codes: H01L 25/0652 : the devices being arranged next and on each other, i.e. mixed assemblies
• CPC Class Codes: H01L 25/0657 : Stacked arrangements of devices
• CPC Class Codes: H01L 25/105 : the devices being of a type provided for in group H01L27/00
• CPC Class Codes: H01L 25/50 : Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00 H01L21/50 takes precedence
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01004 : Beryllium [Be]
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01014 : Silicon [Si]
• CPC Class Codes: H01L 2924/01028 : Nickel [Ni]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/10161 : with a rectangular active surface
• CPC Class Codes: H01L 2924/15331 : being a ball array, e.g. BGA
• CPC Class Codes: H01L 2924/18161 : of a flip chip
• CPC Class Codes: H01L 2924/18162 : of a chip with build-up interconnect
• CPC Class Codes: H01L 2924/18165 : of a wire bonded chip

Abstract

A semiconductor device includes a first semiconductor chip having a pad electrode formed on an upper surface thereof; a resin section sealing the first semiconductor chip with the upper surface and a side surface of the first semiconductor chip being covered and a lower surface of the first semiconductor chip being exposed; a columnar electrode communicating between the upper surface and the lower surface of the resin section with the upper surface and the lower surface of the columnar electrode being exposed on the resin section and at least a part of the side surface of the columnar electrode being covered; and a bonding wire connecting the pad electrode and the columnar electrode with a part of the bonding wire being embedded in the columnar electrode as one end of the bonding wire being exposed on the lower surface of the columnar electrode and the remaining part of the bonding wire being covered with the resin section, and a method for manufacturing the same.

Claims

1. A semiconductor device comprising:

a first semiconductor chip having a pad electrode formed on an upper surface thereof;

a resin section sealing the first semiconductor chip with the upper surface and a side surface of the first semiconductor chip being covered and a lower surface of the first semiconductor chip being exposed;

a columnar electrode communicating between an upper surface and a lower surface of the resin section with an upper surface and a lower surface of the columnar electrode being exposed on the resin section and at least a part of the side surface of the columnar electrode being covered; and

a bonding wire connecting the pad electrode and the columnar electrode with a portion of a length of the bonding wire embedded in the columnar electrode so that one end of the bonding wire is exposed on the lower surface of the columnar electrode and a remaining portion of the length of the bonding wire is covered with the resin section.

2. The semiconductor device according to claim 1, wherein the side surface of the columnar electrode is surrounded by the resin section.

3. The semiconductor device according to claim 1, wherein an outer surface of the columnar electrode is exposed on the resin section.

4. The semiconductor device according to claim 1, further comprising a metal film formed on the upper surface and the lower surface of the columnar electrode.

5. The semiconductor device according to claim 1, further comprising a second semiconductor chip flip-chip bonded on the first semiconductor chip with a lower surface and a side surface of the second semiconductor chip being covered with the resin section and an upper surface of the second semiconductor chip being exposed on the resin section.

6. The semiconductor device according to claim 1, wherein the columnar electrode is made of copper or solder.

7. The semiconductor device according to claim 1, wherein the first semiconductor chip is provided in plurality and such first semiconductor chips are stacked so as to superpose the columnar electrodes for the first semiconductor chips above and below.

8. A semiconductor device comprising:

a first semiconductor chip having a pad electrode formed on an upper surface thereof;

a resin section sealing the first semiconductor chip with the upper surface and a side surface of the first semiconductor chip being covered and a lower surface of the first semiconductor chip being exposed;

a first and second columnar electrodes communicating between an upper surface and a lower surface of the resin section with an upper surface and a lower surface of each of the first and second columnar electrodes being exposed on the resin section and at least a part of the side surface of each of the first and second columnar electrodes being covered; and

a first and second bonding wires connecting the pad electrode and the first and second columnar electrodes, respectively, with a portion of a length of each of the first and second bonding wires embedded in the first and second columnar electrodes, respectively, so that one end of each of the first and second bonding wires is exposed on the lower surface of the first and second columnar electrodes, respectively, and a remaining portion of the length of each of the first and second bonding wires is covered with the resin section.