Apparatus and methods for detecting overlay errors using scatterometry

• US 7,933,016 B2
• Filed: 12/18/2009
• Issued: 04/26/2011
• Est. Priority Date: 12/05/2002
• Status: Active Grant

• Current Assignee: Kla-Tencor Technologies Corporation (KLA Corporation)
• Original Assignee: Kla-Tencor Technologies Corporation (KLA Corporation)
• Inventors: Golovanevsky, Boris, Dziura, Thaddeus G., Zalicki, Piotr, Dececco, Paola, Gross, Kenneth P., Fabrikant, Anatoly, Levy, Ady, Adel, Michael, Wack, Dan, Friedmann, Michael, Smith, Ian, Mieher, Walter D., Fielden, John, Ghinovker, Mark, Bareket, Noah, Bevis, Christopher F.
• Primary Examiner(s): Chowdhury; Tarifur
• Assistant Examiner(s): Stock, Jr.; Gordon J
• Application Number:
  US12/641,663
• Publication Number:
  US 20100091284A1
• Time in Patent Office: 494 Days
• Field of Search: None
• US Class Current: 356/401
• CPC Class Codes: G01N 2021/213 Spectrometric ellipsometry
• CPC Class Codes: G01N 21/956 Inspecting patterns on the surface of objects contactless testing of electronic circuits G01R31/308; testing currency G07D; manufacturing processes per se of semiconductor devices implementing a measuring step H01L22/10
• CPC Class Codes: G03F 7/70625 Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
• CPC Class Codes: G03F 7/70633 Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
• CPC Class Codes: G03F 7/70683 Mark designs
• CPC Class Codes: G03F 9/7049 Technique, e.g. interferometric
• CPC Class Codes: G03F 9/7084 Position of mark on substrate, i.e. position in (x, y, z) of mark, e.g. buried or resist covered mark, mark on rearside, at the substrate edge, in the circuit area, latent image mark, marks in plural levels
• CPC Class Codes: G03F 9/7088 Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection

Abstract

Disclosed are techniques, apparatus, and targets for determining overlay error between two layers of a sample. A plurality of targets is provided. Each target includes a portion of the first and second structures and each is designed to have an offset between its first and second structure portions. The targets are illuminated with electromagnetic radiation to thereby obtain spectra from each target at a −1^st diffraction order and a +1^st diffraction order. It is determined whether there are any overlay error between the first structures and the second structures using a scatterometry technique based on the detected spectra by (i) for each target, determining a first differential intensity between the −1^st diffraction order and a +1^st diffraction order, (ii) for a plurality of pairs of targets each having a first target and a second target, determining a second differential intensity between the first differential intensity of the first target and the first differential intensity of the second target, and (iii) determining any overlay error between the first structures and the second structures using a scatterometry technique based on the second differential intensities determined from each target pair.

Claims

1. A method for determining overlay between a plurality of first structures in a first layer of a sample and a plurality of second structures in a second layer of the sample, the method comprising:

providing a plurality of targets that each include a portion of the first and second structures and each is designed to have an offset between its first and second structure portions;

illuminating the targets with electromagnetic radiation to thereby obtain detected output radiation from each target at a −

1^st diffraction order and a +1^st diffraction order; and

determining any overlay error between the first structures and the second structures using a scatterometry technique based on the detected output radiation by;

for each target, determining a first differential intensity between the −

1^st diffraction order and the +1^st diffraction order,

for a plurality of pairs of targets each having a first target and a second target, determining a second differential intensity between the first differential intensity of the first target and the first differential intensity of the second target, and

determining any overlay error between the first structures and the second structures using a scatterometry technique based on the second differential intensities determined from each target pair.

2. The method of claim 1, wherein output radiation from each target at the −

1^st diffraction order and the +1^st diffraction order is detected at a plurality of sequential wavelengths.

3. The method of claim 1, wherein output radiation from each target at the −

1^st diffraction order and the +1^st diffraction order is detected at an angle that is oblique to a surface of the sample.

4. The method of claim 1, wherein output radiation from each target at the −

1^st diffraction order and the +1^st diffraction order is detected at an angle that is normal to a surface of the sample.

5. The method of claim 1, wherein the scatterometry technique comprises a linear technique.

6. The method of claim 1, wherein obtaining the output radiation comprises acquiring radiation from the targets using an optical apparatus.

7. The method of claim 6, wherein the optical apparatus is a system with two or more reflectometers capable of parallel data acquisition.

8. The method of claim 6, wherein the optical apparatus is a system with two or more reflectometers capable of serial data acquisition.

9. The method of claim 6, wherein the optical apparatus is a system with two or more polarized reflectometers capable of parallel data acquisition.

10. The method of claim 6, wherein the optical apparatus is a system with two or more polarized reflectometers capable of serial data acquisition without moving a wafer stage or moving any optical elements or a reflectometer stage.

11. A system for determining overlay between a plurality of first structures in a first layer of a sample and a plurality of second structures in a second layer of the sample, comprising:

a scatterometry module for illuminating a plurality of targets, which each include a portion of the first and second structures and each is designed to have an offset between its first and second structure portions, with electromagnetic radiation to obtain detected output radiation from each target at a −

1^st diffraction order and a +1^st diffraction order; and

a processor operable for determining any overlay error between the first structures and the second structures using a scatterometry technique based on the detected output radiation by;

for each target, determining a first differential intensity between the −

1^st diffraction order and the +1^st diffraction order,

for a plurality of pairs of targets each having a first target and a second target, determining a second differential intensity between the first differential intensity of the first target and the first differential intensity of the second target, and

determining any overlay error between the first structures and the second structures using a scatterometry technique based on the second differential intensities determined from each target pair.

12. The system of claim 11, wherein output radiation from each target at the −

1^st diffraction order and the +1^st diffraction order is detected at a plurality of sequential wavelengths.

13. The system of claim 11, wherein output radiation from each target at the −

1^st diffraction order and the +1^st diffraction order is detected at an angle that is oblique to a surface of the sample.

14. The system of claim 11, wherein output radiation from each target at the −

1^st diffraction order and the +1^st diffraction order is detected at an angle that is normal to a surface of the sample.

15. The system of claim 11, wherein the scatterometry technique comprises a linear technique.

16. The system of claim 11, wherein obtaining the output radiation comprises acquiring radiation from the targets using an optical apparatus.

17. The system of claim 16, wherein the optical apparatus is a system with two or more reflectometers capable of parallel data acquisition.

18. The system of claim 16, wherein the optical apparatus is a system with two or more reflectometers capable of serial data acquisition.

19. The system of claim 16, wherein the optical apparatus is a system with two or more polarized reflectometers capable of parallel data acquisition.

20. The system of claim 16, wherein the optical apparatus is a system with two or more polarized reflectometers capable of serial data acquisition without moving a wafer stage or moving any optical elements or a reflectometer stage.