Device for generating or detecting electromagnetic radiation, and fabrication method of the same
First Claim
1. A device for generating or detecting a terahertz wave, said device comprising:
- a substrate;
a gain medium provided on the substrate, said gain medium having a quantum well structure formed of a semiconductor material, and said gain medium giving a gain to the terahertz wave by transition between subbands created in at least a quantum well in the quantum well structure;
a plurality of reflectors for confining the terahertz wave in a predetermined frequency range substantially perpendicularly to a face of the substrate; and
a spacer layer for spacing the reflectors from each other at a predetermined distance with the gain medium being sandwiched between the reflectors, said spacer layer being formed of a material different from a crystalline material of the gain medium,wherein the predetermined distance between the reflectors is determined by a thickness of the spacer layer such that the predetermined distance approximately equals to an equivalent wavelength of the terahertz wave in the device,wherein the spacer layer is composed of Si, organic resin, or ceramics,wherein the terahertz wave is reflected in a reflection area on at least one reflector among the plurality of reflectors, andwherein the reflection area on the at least one reflector is in contact with the spacer layer.
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Abstract
A device for generating or detecting electromagnetic radiation includes a substrate, a gain medium provided on the substrate, a plurality of reflectors for confining electromagnetic radiation at a predetermined frequency range and substantially perpendicular to a face of the substrate, and spacer means for spacing the reflectors from each other at a predetermined distance, with the gain medium being sandwiched between the reflectors. The gain medium has a quantum well structure formed of a semiconductor material, and gives a gain to electromagnetic radiation by transitioning between subbands created in at least a quantum well in the quantum well structure. The spacer means is formed of a material different from a material of the gain medium.
33 Citations
12 Claims
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1. A device for generating or detecting a terahertz wave, said device comprising:
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a substrate; a gain medium provided on the substrate, said gain medium having a quantum well structure formed of a semiconductor material, and said gain medium giving a gain to the terahertz wave by transition between subbands created in at least a quantum well in the quantum well structure; a plurality of reflectors for confining the terahertz wave in a predetermined frequency range substantially perpendicularly to a face of the substrate; and a spacer layer for spacing the reflectors from each other at a predetermined distance with the gain medium being sandwiched between the reflectors, said spacer layer being formed of a material different from a crystalline material of the gain medium, wherein the predetermined distance between the reflectors is determined by a thickness of the spacer layer such that the predetermined distance approximately equals to an equivalent wavelength of the terahertz wave in the device, wherein the spacer layer is composed of Si, organic resin, or ceramics, wherein the terahertz wave is reflected in a reflection area on at least one reflector among the plurality of reflectors, and wherein the reflection area on the at least one reflector is in contact with the spacer layer. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A device for generating a terahertz wave comprising:
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a first reflective minor for reflecting the terahertz wave; an epitaxial-growth layer grown in an epitaxial manner on the first reflective minor, the epitaxial-growth layer including a gain medium for giving a gain to the terahertz wave by transitioning between subbands created in at least a quantum well in a quantum well structure formed of a semiconductor material; a spacer layer formed on a surface of the epitaxial-growth layer, the spacer layer being formed of a material different from a crystalline material of the gain medium; and a second reflective minor provided on a surface of the spacer layer in order to confine the terahertz wave between the first reflective minor and the second reflective minor in a direction substantially perpendicular to an in-plane direction of the gain medium, wherein a distance between the first reflective minor and the second reflective mirror is determined by a thickness of the spacer layer such that the distance approximately equals to an equivalent wavelength of the terahertz wave in the device, wherein the spacer layer is composed of Si, organic resin, or ceramics, wherein the terahertz wave is reflected in a reflection area on at least one reflector among the plurality of reflectors, and wherein the reflection area on the at least one reflector is in contact with the spacer layer. - View Dependent Claims (9, 10, 11, 12)
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Specification