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Capacitative pressure sensor

  • US 7,934,427 B2
  • Filed: 12/20/2009
  • Issued: 05/03/2011
  • Est. Priority Date: 10/18/2004
  • Status: Expired due to Fees
First Claim
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1. A capacitative pressure sensor comprising:

  • a silicon substrate;

    CMOS layers deposited on the silicon substrate;

    a conductive layer deposited on the CMOS layer; and

    ,a passivation layer on the conductive layer;

    a conductive membrane extending from the substrate assembly and spaced from the conductive layer;

    wherein,the conductive layer has a plurality of apertures and the silicon substrate defines a passage for fluid communication with fluid pressure exterior to the pressure sensor; and

    a cap extending from the substrate assembly to cover the membrane and form a chamber on one side of the conductive membrane that is sealed from the fluid pressure exterior to the pressure sensor.

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