Field effect transistor using amorphous oxide film as channel layer, manufacturing method of field effect transistor using amorphous oxide film as channel layer, and manufacturing method of amorphous oxide film

• US 7,935,582 B2
• Filed: 07/09/2010
• Issued: 05/03/2011
• Est. Priority Date: 09/06/2005
• Status: Expired due to Fees

• Current Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Original Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Inventors: Iwasaki, Tatsuya
• Primary Examiner(s): Nguyen; Dao H
• Application Number:
  US12/833,850
• Publication Number:
  US 20100279462A1
• Time in Patent Office: 298 Days
• Field of Search: 257/52, 257/55, 257/57, 257/66, 257/72, 257/79, 257/98, 257/E21.441, 257/E21.46, 257/E21.461, 257/E29.145, 257/E29.273, 257/E29.299, 438/104, 438/151
• US Class Current: 438/151
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/78693 the semiconducting oxide being amorphous

Abstract

An amorphous oxide containing hydrogen (or deuterium) is applied to a channel layer of a transistor. Accordingly, a thin film transistor having superior TFT properties can be realized, the superior TFT properties including a small hysteresis, normally OFF operation, a high ON/OFF ratio, a high saturated current, and the like. Furthermore, as a method for manufacturing a channel layer made of an amorphous oxide, film formation is performed in an atmosphere containing a hydrogen gas and an oxygen gas, so that the carrier concentration of the amorphous oxide can be controlled.

Claims

1. A method for manufacturing an amorphous oxide film which contains In or Zn and which is used as a channel layer of a field effect transistor, the amorphous oxide film showing an electron carrier concentration and an electron mobility such that the electron mobility tends to increase as the electron carrier concentration increases, the method comprising the steps of:

disposing a substrate in a film-forming apparatus; and

forming the amorphous oxide film on the substrate by a sputtering method while a hydrogen gas and an oxygen gas are introduced in the film-forming apparatus at respective partial pressures of 0.001 to 0.01 Pa and 0.008 to 0.5 Pa, whereby the amorphous oxide film contains hydrogen at a concentration of 10¹⁶/cm³ to 10²⁰/cm³.

2. A method for manufacturing a field effect transistor, comprising the steps of:

forming a gate electrode;

forming a gate insulating layer;

forming a source electrode and a drain electrode; and

forming a channel layer of an amorphous oxide by a sputtering method while a hydrogen gas and an oxygen gas are introduced in a film-forming apparatus at respective partial pressures of 0.001 to 0.01 Pa and 0.008 to 0.5 Pa, whereby the amorphous oxide film contains hydrogen at a concentration of 10¹⁶/cm³ to 10²⁰/cm³, the channel layer showing an electron carrier concentration and an electron mobility such that the electron mobility tends to increase as the electron carrier concentration increases.

3. The method for manufacturing a field effect transistor according to claim 2, further comprising the step of:

increasing the amount of hydrogen contained in the channel layer formed of the amorphous oxide by ion implantation or plasma treatment in an atmosphere containing hydrogen.

4. A method for manufacturing an amorphous oxide film which contains In or Zn and which is used as a channel layer of a field effect transistor, the amorphous oxide film showing an electron carrier concentration and an electron mobility such that the electron mobility tends to increase as the electron carrier concentration increases, the method comprising the steps of:

disposing a substrate in a film-forming apparatus;

forming an amorphous oxide film on the substrate by a sputtering method; and

introducing hydrogen into the amorphous oxide film, after formation thereof, by ion implantation or plasma treatment in an atmosphere containing hydrogen, whereby the amorphous oxide film contains hydrogen at a concentration of 10¹⁶/cm³ to 10²⁰/cm³.