×

Polarity dependent switch for resistive sense memory

  • US 7,935,619 B2
  • Filed: 05/05/2010
  • Issued: 05/03/2011
  • Est. Priority Date: 11/07/2008
  • Status: Active Grant
First Claim
Patent Images

1. A method of forming a memory unit comprising;

  • implanting dopant material more heavily in a source contact than a bit contact of a semiconductor transistor; and

    electrically connecting a resistive sense memory cell to the bit contact, the resistive sense memory cell configured to switch between a high resistance state and a low resistance state upon passing a current through the resistive sense memory cell.

View all claims
  • 2 Assignments
Timeline View
Assignment View
    ×
    ×