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Fabrication method of semiconductor device having a barrier layer containing Mn

  • US 7,935,624 B2
  • Filed: 01/18/2007
  • Issued: 05/03/2011
  • Est. Priority Date: 01/20/2006
  • Status: Active Grant
First Claim
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1. A method for fabricating a semiconductor device, comprising:

  • forming an opening defined by an inner wall surface in an insulation film;

    forming a Cu—

    Mn alloy layer in said opening;

    depositing a Cu layer on said Cu—

    Mn alloy layer and filling said opening with said Cu layer; and

    forming a barrier layer as a result of reaction between Mn atoms in said Cu—

    Mn alloy layer and said insulation film,wherein said forming said barrier layer is conducted by exposing said Cu layer to a gaseous ambient that reacts with Mn and forms a gaseous reaction product of Mn, said gaseous reaction product of Mn being a gaseous material,said gaseous ambient containing any of a formic acid, a carboxylic acid, hexafluoroacetylacetonato, H2O, and CO2.

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