Semiconductor device
First Claim
1. A semiconductor device comprising:
- a plurality of field-effect transistors each of which is provided over a first insulating layer and uses a single-crystal semiconductor layer as a channel portion;
a second insulating layer covering the plurality of field-effect transistors;
a third insulating layer formed over the second insulating layer;
a first conductive layer connected to one of a source region and a drain region of one of the plurality of field-effect transistors through a first opening portion provided in the second insulating layer and the third insulating layer;
a second conductive layer connected to one of a source region and a drain region of another one of the plurality of field-effect transistors through a second opening portion provided in the second insulating layer and the third insulating layer;
a fourth insulating layer formed over the first conductive layer and the second conductive layer;
an organic compound layer formed in a third opening portion provided in the fourth insulating layer and over the first conductive layer; and
a third conductive layer covering the organic compound layer,wherein the first conductive layer and the second conductive layer are provided in the same layer, andwherein the second conductive layer is an antenna.
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Accused Products
Abstract
The present invention provides a semiconductor device which has a storage element having a simple structure in which an organic compound layer is sandwiched between a pair of conductive layers and a manufacturing method of such a semiconductor device. With this characteristic, a semiconductor device having a storage circuit which is nonvolatile, additionally recordable, and easily manufactured and a manufacturing method of such a semiconductor device are provided. A semiconductor device according to the present invention has a plurality of field-effect transistors provided over an insulating layer and a plurality of storage elements provided over the plurality of field-effect transistors. Each of the plurality of field-effect transistors uses a single-crystal semiconductor layer as a channel portion and each of the plurality of storage elements is an element in which a first conductive layer, an organic compound layer, and a second conductive layer are stacked in order.
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Citations
16 Claims
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1. A semiconductor device comprising:
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a plurality of field-effect transistors each of which is provided over a first insulating layer and uses a single-crystal semiconductor layer as a channel portion; a second insulating layer covering the plurality of field-effect transistors; a third insulating layer formed over the second insulating layer; a first conductive layer connected to one of a source region and a drain region of one of the plurality of field-effect transistors through a first opening portion provided in the second insulating layer and the third insulating layer; a second conductive layer connected to one of a source region and a drain region of another one of the plurality of field-effect transistors through a second opening portion provided in the second insulating layer and the third insulating layer; a fourth insulating layer formed over the first conductive layer and the second conductive layer; an organic compound layer formed in a third opening portion provided in the fourth insulating layer and over the first conductive layer; and a third conductive layer covering the organic compound layer, wherein the first conductive layer and the second conductive layer are provided in the same layer, and wherein the second conductive layer is an antenna. - View Dependent Claims (2, 3, 4, 5, 11, 12, 13, 14, 15, 16)
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6. A semiconductor device comprising:
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a plurality of field-effect transistors each of which uses a single-crystal semiconductor layer as a channel portion; an insulating layer covering the plurality of field-effect transistors; a first conductive layer over the insulating layer, the first conductive layer being connected to one of a source region and a drain region of one of the plurality of field-effect transistors; a second conductive layer over the insulating layer, the second conductive layer being connected to one of a source region and a drain region of another one of the plurality of field-effect transistors; an organic compound layer formed over the first conductive layer; and a third conductive layer covering the organic compound layer, wherein the first conductive layer and the second conductive layer are provided in the same layer, and wherein the second conductive layer is an antenna. - View Dependent Claims (7, 8, 9, 10)
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Specification