Nitride semiconductor light emitting diode

• US 7,935,970 B2
• Filed: 10/24/2008
• Issued: 05/03/2011
• Est. Priority Date: 08/29/2006
• Status: Expired due to Fees

• Current Assignee: Samsung Electronics Co. Ltd. (Samsung Group)
• Original Assignee: Samsung LED Co., Ltd. (Samsung Group)
• Inventors: Shim, Ji Hye, Kim, Bum Joon, Song, Sang-Yeob
• Primary Examiner(s): Vu; David
• Assistant Examiner(s): Fox; Brandon
• Application Number:
  US12/258,292
• Publication Number:
  US 20090095965A1
• Time in Patent Office: 921 Days
• Field of Search: 257/79, 257/E33.061, 257/94, 257/97
• US Class Current: 257/79
• CPC Class Codes: H01L 33/02 characterised by the semiconductor bodies
• CPC Class Codes: H01L 33/32 containing nitrogen

Abstract

A nitride semiconductor light emitting diode (LED) comprises an n-type nitride semiconductor layer; an electron emitting layer formed on the n-type nitride semiconductor layer, the electron emitting layer being composed of a nitride semiconductor layer including a transition element of group III; an active layer formed on the electron emitting layer; and a p-type nitride semiconductor layer formed on the active layer.

Claims

1. A nitride semiconductor light emitting diode (LED) comprising:

an n-type nitride semiconductor layer;

an active layer formed on the n-type nitride semiconductor layer;

an electron emitting layer formed on the active layer, wherein the electron emitting layer comprises at least a pair of a first nitride semiconductor layer including a transition element of group III and a second nitride semiconductor layer, and wherein the inclusion of the group III transition element increases the bandgap difference between the first nitride semiconductor and the second nitride semiconductor; and

a p-type nitride semiconductor layer formed on the electron emitting layer.

2. A nitride semiconductor light emitting diode (LED) comprising:

a substrate;

an n-type nitride semiconductor layer formed on the substrate;

an active layer formed on a portion of the n-type nitride semiconductor layer;

an electron emitting layer formed on the active layer, wherein the electron emitting layer comprises at least a pair of a first nitride semiconductor layer including a transition element of group III and a second nitride semiconductor layer, and wherein the inclusion of the group III transition element increases the bandgap difference between the first nitride semiconductor and the second nitride semiconductor;

a p-type nitride semiconductor layer formed on the electron emitting layer;

a p-electrode formed on the p-type nitride semiconductor layer; and

an n-electrode formed on the n-type nitride semiconductor layer where the active layer is not formed.

3. A nitride semiconductor light emitting diode (LED) comprising:

a p-electrode;

a p-type nitride semiconductor layer formed on the p-electrode;

an electron emitting layer formed on the p-type nitride semiconductor layer, wherein the electron emitting layer comprises at least a pair of a first nitride semiconductor layer including a transition element of group III and a second nitride semiconductor layer, and wherein the inclusion of the group III transition element increases the bandgap difference between the first nitride semiconductor and the second nitride semiconductor;

an active layer formed on the electron emitting layer;

an n-type nitride semiconductor layer formed on the active layer;

a substrate formed on the n-type nitride semiconductor layer; and

an n-electrode formed on the substrate.

4. The nitride semiconductor LED according to claim 3,

wherein the substrate is any one selected from the group consisting of a GaN substrate, an SiC substrate, a ZnO substrate, and a conductive substrate.