Nitride semiconductor light emitting diode
First Claim
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1. A nitride semiconductor light emitting diode (LED) comprising:
- an n-type nitride semiconductor layer;
an active layer formed on the n-type nitride semiconductor layer;
an electron emitting layer formed on the active layer, wherein the electron emitting layer comprises at least a pair of a first nitride semiconductor layer including a transition element of group III and a second nitride semiconductor layer, and wherein the inclusion of the group III transition element increases the bandgap difference between the first nitride semiconductor and the second nitride semiconductor; and
a p-type nitride semiconductor layer formed on the electron emitting layer.
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Abstract
A nitride semiconductor light emitting diode (LED) comprises an n-type nitride semiconductor layer; an electron emitting layer formed on the n-type nitride semiconductor layer, the electron emitting layer being composed of a nitride semiconductor layer including a transition element of group III; an active layer formed on the electron emitting layer; and a p-type nitride semiconductor layer formed on the active layer.
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Citations
4 Claims
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1. A nitride semiconductor light emitting diode (LED) comprising:
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an n-type nitride semiconductor layer; an active layer formed on the n-type nitride semiconductor layer; an electron emitting layer formed on the active layer, wherein the electron emitting layer comprises at least a pair of a first nitride semiconductor layer including a transition element of group III and a second nitride semiconductor layer, and wherein the inclusion of the group III transition element increases the bandgap difference between the first nitride semiconductor and the second nitride semiconductor; and a p-type nitride semiconductor layer formed on the electron emitting layer.
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2. A nitride semiconductor light emitting diode (LED) comprising:
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a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer formed on a portion of the n-type nitride semiconductor layer; an electron emitting layer formed on the active layer, wherein the electron emitting layer comprises at least a pair of a first nitride semiconductor layer including a transition element of group III and a second nitride semiconductor layer, and wherein the inclusion of the group III transition element increases the bandgap difference between the first nitride semiconductor and the second nitride semiconductor; a p-type nitride semiconductor layer formed on the electron emitting layer; a p-electrode formed on the p-type nitride semiconductor layer; and an n-electrode formed on the n-type nitride semiconductor layer where the active layer is not formed.
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3. A nitride semiconductor light emitting diode (LED) comprising:
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a p-electrode; a p-type nitride semiconductor layer formed on the p-electrode; an electron emitting layer formed on the p-type nitride semiconductor layer, wherein the electron emitting layer comprises at least a pair of a first nitride semiconductor layer including a transition element of group III and a second nitride semiconductor layer, and wherein the inclusion of the group III transition element increases the bandgap difference between the first nitride semiconductor and the second nitride semiconductor; an active layer formed on the electron emitting layer; an n-type nitride semiconductor layer formed on the active layer; a substrate formed on the n-type nitride semiconductor layer; and an n-electrode formed on the substrate. - View Dependent Claims (4)
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Specification