White light emitting device
First Claim
1. A white light emitting device comprising:
- a submount substrate having a p-side lead terminal and an n-side lead terminal formed thereon;
a first light emitter including a p-type nitride semiconductor layer, a first active layer, an n-type nitride semiconductor layer and an insulating substrate stacked sequentially from bottom to top, the p-type nitride semiconductor layer connected to the p-side lead terminal and the n-type nitride semiconductor layer connected to the n-side lead terminal;
a metal layer formed on a partial area of the insulating substrate;
a second light emitter formed on the metal layer, bonded to a partial area of the metal layer, the second light emitter including a p-type A1GaInP-based semiconductor layer, a second active layer and an n-type AlGaInP-based semiconductor layer stacked sequentially; and
first p- and n-electrodes connected to the p- and n-type nitride semiconductor layers of the first light emitter, respectively;
a second p-electrode connected to another area of the metal layer; and
a second n-electrode connected to the n-type AlGaInP-based semiconductor layer of the second light emitter.
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Accused Products
Abstract
The invention relates to a monolithic white light emitting device using wafer bonding or metal bonding. In the invention, a conductive submount substrate is provided. A first light emitter is bonded onto the conductive submount substrate by a metal layer. In the first light emitter, a p-type nitride semiconductor layer, a first active layer, an n-type nitride semiconductor layer and a conductive substrate are stacked sequentially from bottom to top. In addition, a second light emitter is formed on a partial area of the conductive substrate. In the second light emitter, a p-type AlGaInP-based semiconductor layer, an active layer and an n-type AlGaInP-based semiconductor layer are stacked sequentially from bottom to top. Further, a p-electrode is formed on an underside of the conductive submount substrate and an n-electrode is formed on a top surface of the n-type AlGaInP-based semiconductor layer.
21 Citations
8 Claims
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1. A white light emitting device comprising:
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a submount substrate having a p-side lead terminal and an n-side lead terminal formed thereon; a first light emitter including a p-type nitride semiconductor layer, a first active layer, an n-type nitride semiconductor layer and an insulating substrate stacked sequentially from bottom to top, the p-type nitride semiconductor layer connected to the p-side lead terminal and the n-type nitride semiconductor layer connected to the n-side lead terminal; a metal layer formed on a partial area of the insulating substrate; a second light emitter formed on the metal layer, bonded to a partial area of the metal layer, the second light emitter including a p-type A1GaInP-based semiconductor layer, a second active layer and an n-type AlGaInP-based semiconductor layer stacked sequentially; and first p- and n-electrodes connected to the p- and n-type nitride semiconductor layers of the first light emitter, respectively; a second p-electrode connected to another area of the metal layer; and a second n-electrode connected to the n-type AlGaInP-based semiconductor layer of the second light emitter. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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Specification