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Nonvolatile semiconductor memory device and manufacturing method thereof

  • US 7,936,004 B2
  • Filed: 01/18/2007
  • Issued: 05/03/2011
  • Est. Priority Date: 03/27/2006
  • Status: Active Grant
First Claim
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1. A nonvolatile semiconductor memory device comprising a plurality of memory strings arranged in a matrix shape in a row direction and a column direction, the plurality of memory strings including at least one memory string having a plurality of electrically programmable memory cells connected in series,wherein the at least one memory string of the plurality of memory strings comprises a pillar shaped semiconductor, a first insulation film formed around the pillar shaped semiconductor, a charge storage layer formed around the first insulation film, a second insulation film formed around the charge storage layer, and first to nth electrodes formed around the second insulation film (n is a natural number not less than 2);

  • andwherein the first to the nth electrodes of the at least one memory string are shared with a second memory string adjacent to the at least one memory string in the column direction and a third memory string adjacent to the at least one memory string in the row direction.

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