Structure and method for forming accumulation-mode field effect transistor with improved current capability
First Claim
1. An accumulation-mode field effect transistor comprising:
- a drift region of a first conductivity type;
channel regions of the first conductivity type over and in contact with the drift region;
gate trenches having sidewalls abutting the channel regions, the gate trenches extending into the drift region; and
a first plurality of silicon regions of a second conductivity type forming P-N junctions with the channel regions along vertical walls of the first plurality of silicon regions, the first plurality of silicon regions extending into the drift region so as to form P-N junctions with the drift region along bottoms of the first plurality of silicon regions, each silicon region of the first plurality of silicon regions having a top surface that is recessed relative to a top surface of an adjacent one of the channel regions.
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Abstract
An accumulation-mode field effect transistor includes a drift region of a first conductivity type, channel regions of the first conductivity type over and in contact with the drift region, and gate trenches having sidewalls abutting the channel regions. The gate trenches extend into and terminate within the drift region. The transistor further includes a first plurality of silicon regions of a second conductivity type forming P-N junctions with the channel regions along vertical walls of the first plurality of silicon regions. The first plurality of silicon regions extend into the drift region and form P-N junctions with the drift region along bottoms of the first plurality of silicon regions.
327 Citations
20 Claims
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1. An accumulation-mode field effect transistor comprising:
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a drift region of a first conductivity type; channel regions of the first conductivity type over and in contact with the drift region; gate trenches having sidewalls abutting the channel regions, the gate trenches extending into the drift region; and a first plurality of silicon regions of a second conductivity type forming P-N junctions with the channel regions along vertical walls of the first plurality of silicon regions, the first plurality of silicon regions extending into the drift region so as to form P-N junctions with the drift region along bottoms of the first plurality of silicon regions, each silicon region of the first plurality of silicon regions having a top surface that is recessed relative to a top surface of an adjacent one of the channel regions. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. An accumulation-mode field effect transistor comprising:
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a drift region of a first conductivity type; a channel region of the first conductivity type over and in contact with the drift region; a gate trench having a sidewall abutting the channel region, the gate trench extending into the drift region; and a silicon region of a second conductivity type forming a P-N junction with the channel region along a vertical wall of the silicon region, the silicon region extending into the drift region so as to form a P-N junction with the drift region along a bottom of the silicon region, the silicon region having a top surface that is recessed relative to a top surface of the channel region. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification