Variable resistive memory punchthrough access method
First Claim
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1. A method comprising:
- switching a variable resistive data cell from a high resistance state to a low resistance state by passing a write current through the variable resistive data cell in a first direction, the write current provided by a transistor being electrically coupled to the variable resistive data cell and a source line, the write current passing through the transistor in punchthrough mode; and
switching the variable resistive data cell from a low resistance state to a high resistance state by passing a write current through the variable resistive data cell in a second direction opposing the first direction, the write current provided by the transistor, the write current passing through the transistor in punchthrough mode.
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Abstract
Variable resistive punchthrough access methods are described. The methods include switching a variable resistive data cell from a high resistance state to a low resistance state by passing a write current through the magnetic tunnel junction data cell in a first direction. The write current is provided by a transistor being electrically coupled to the variable resistive data cell and a source line. The write current passes through the transistor in punchthrough mode.
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11 Claims
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1. A method comprising:
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switching a variable resistive data cell from a high resistance state to a low resistance state by passing a write current through the variable resistive data cell in a first direction, the write current provided by a transistor being electrically coupled to the variable resistive data cell and a source line, the write current passing through the transistor in punchthrough mode; and switching the variable resistive data cell from a low resistance state to a high resistance state by passing a write current through the variable resistive data cell in a second direction opposing the first direction, the write current provided by the transistor, the write current passing through the transistor in punchthrough mode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method comprising:
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applying a punchthrough voltage across a first bit line and a source line to form a write current to switch a first variable resistive data cell from a high resistance state to a low resistance state, the write current passing through a first transistor being electrically coupled to the first variable resistive data cell and the first bit line, the write current passing through the transistor in punchthrough mode; activating a common transistor to allow the write current to pass through the common transistor, the common transistor electrically coupled to the source line and the first variable resistive data cell, the common transistor electrically coupled to a second variable resistive data cell, the second variable resistive data cell electrically coupled to a second bit line via a second transistor. - View Dependent Claims (10, 11)
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Specification