Close shaped magnetic multi-layer film comprising or not comprising a metal core and the manufacture method and the application of the same

• US 7,936,595 B2
• Filed: 12/31/2006
• Issued: 05/03/2011
• Est. Priority Date: 12/31/2005
• Status: Active Grant

• Current Assignee: Institute of Physics Chinese Academy of Sciences
• Original Assignee: Institute of Physics Chinese Academy of Sciences
• Inventors: Ma, Ming, Wei, Hongxiang, Jiang, Lixian, Han, Xiufeng, Han, Yunan, Qin, Qihang
• Primary Examiner(s): Dinh; Son
• Assistant Examiner(s): LE, TOAN K
• Application Number:
  US12/159,657
• Publication Number:
  US 20090168506A1
• Time in Patent Office: 1,584 Days
• Field of Search: 365/171, 365/158, 365/66, 365/55, 365/173, 365/225.5, 257/421
• US Class Current: 365/171
• CPC Class Codes: B82Y 25/00 Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
• CPC Class Codes: G01R 33/093 using multilayer structures, e.g. giant magnetoresistance sensors thin magnetic films H01F10/00
• CPC Class Codes: G01R 33/098 comprising tunnel junctions, e.g. tunnel magnetoresistance sensors
• CPC Class Codes: G11C 11/155 with cylindrical configuration
• CPC Class Codes: G11C 11/161 details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
• CPC Class Codes: G11C 11/1655 Bit-line or column circuits
• CPC Class Codes: G11C 11/1657 Word-line or row circuits
• CPC Class Codes: G11C 11/1659 Cell access
• CPC Class Codes: G11C 11/1673 Reading or sensing circuits or methods
• CPC Class Codes: G11C 11/1675 Writing or programming circuits or methods
• CPC Class Codes: H01F 10/1936 Half-metallic, e.g. epitaxial CrO2 or NiMnSb films
• CPC Class Codes: H01F 10/3254 the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
• CPC Class Codes: H01F 10/3268 the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
• CPC Class Codes: H01F 10/329 Spin-exchange coupled multilayers wherein the magnetisation of the free layer is switched by a spin-polarised current, e.g. spin torque effect
• CPC Class Codes: H01F 41/302 for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices spin-exchange-coupled multilayers H01F10/32
• CPC Class Codes: H10B 61/22 of the field-effect transistor [FET] type
• CPC Class Codes: H10N 50/10 Magnetoresistive devices

Abstract

Each layer in the magnetic multilayer film is a closed ring or oval ring and the magnetic moment or flux of the ferromagnetic film in the magnetic unit is in close state either clockwise or counterclockwise. A metal core is put in the geometry center position in the close-shaped magnetic multilayer film. The cross section of the metal core is a corresponding circular or oval. A MRAM is made of the closed magnetic multilayer film with or without a metal core. The close-shaped magnetic multilayer film is formed by micro process method. The close-shaped magnetic multilayer film can be used broadly in a great variety of device that uses a magnetic multilayer film as the core, such as MRAM, magnetic bead in computer, magnetic sensitive sensor, magnetic logic device and spin transistor.

Claims

1. A geometric shaped magnetic multilayer film, including each layer of a conventional magnetic multilayer film deposited on a substrate, characterized in that:

the cross section of said magnetic multilayer film is a closed elliptic ring, the magnetic moment or flux of the ferromagnetic thin film in the magnetic multilayer film is in clockwise or counter-clockwise closed state;

wherein the interior minor axis of the elliptic ring shaped magnetic multilayer'"'"'s cross section is 10-100000 nm, the ratio of minor axis vs. major axis is 1;

1-1;

5, the exterior minor axis of the ellipse is 20-200000 nm, and the width of the ring is 10-100000 nm.

2. The geometric shaped magnetic multilayer film according to claim 1, characterized in that said elliptic ring whose ratio of minor axis vs. major axis equals 1:

1 is a circular ring.

3. The geometric shaped magnetic multilayer film according to claim 1, characterized in that the magnetic multilayer film whose cross section is elliptic shaped is non-pinning magnetic multilayer film, including a buffering conductive layer, a hard magnetic layer, an intermediate layer, a soft magnetic layer and a capping layer;

Said buffering conductive layer is composed of metal materials, and the thickness is 2-200 nm;

Said hard magnetic layer is composed of giant magneto resistance materials, and the thickness is 2-20 nm;

Said intermediate layer comprising non-magnetic metal layer or insulation potential barrier layer, the thickness of the intermediate layer is 0.5-10 nm;

The component materials of said soft magnetic layer are ferromagnetic materials with high spin polarization and low coercive force, and the thickness of said soft magnetic layer is 1-20 nm;

Said capping layer is composed of non-oxidable metal materials, and the thickness is 2-20 nm.

4. The geometric shaped magnetic multilayer film according to claim 3, characterized in that:

The component materials of said buffering conductive layer are Ta, Ru, Cr, Au, Ag, Pt, Ta, W, Ti, Cu, Al, or Si—

Al alloys;

The component materials of said hard magnetic layer are Co, Fe, Ni, CoFe, NiFeCo, CoFeB or CoFeSiB;

The non-magnetic metal layer of said intermediate layer is Ti, Zn, ZnMn, Cr, Ru, Cu, V or TiC;

said insulation potential barrier layer of the intermediate layer is Al₂O₃, MgO, TiO, ZnO, (ZnMn)O, CrO, VO, or TiCO;

The component materials of said soft magnetic layer are Co, Fe, Ni or the metal alloys thereof, the alloys are NiFe, CoFeSiB or NiFeSiB, or non-crystal CO_100-x-yFe_xB_y, wherein 0<

x<

100, 0<

y≦

20, or CO₂MnSi, CO₂Cr_0.6Fe_0.4Al;

The component materials of said capping layer are Ta, Cu, Ru, Pt, Ag, Au, Cr or the alloys thereof.

5. The geometric shaped magnetic multilayer film according to claim 1, characterized in that:

the closed magnetic multilayer film is pinning magnetic multilayer film, including a buffering conductive layer, an anti-ferromagnetic pinning layer, a pinned magnetic layer, an intermediate layer, a soft magnetic layer and a capping layer;

said buffering conductive layer is composed of metal materials, the thickness is 2-200 nm;

said anti-ferromagnetic pinning layer is composed of anti-ferromagnetic alloys, the thickness is 3-30 nm;

said pinned magnetic layer is composed of ferromagnetic metals of high spin polarization, and the thickness is 2-20 nm;

said intermediate layer is composed of non-magnetic metal layer or insulation potential barrier layer, the thickness of the intermediate layer is 0.5-10 nm;

said soft magnetic layer is composed of ferromagnetic materials of high spin polarizability and low coercive force, and the thickness is 1-20 nm;

said capping layer is composed of non-oxidable metal materials, and the thickness is 2-20 nm.

6. The geometric shaped magnetic multilayer film according to claim 5, characterized in that:

The component materials of said buffering conductive layer are Ta, Ru, Cr, Au, Ag, Pt, Ta, W, Ti, Cu, Al, or Si—

Al alloys;

The component materials of said antiferromagnetic pinning layer are IrMn, FeMn, PtMn, CrMn, or Pt (Cr, Mn) alloys;

The component materials of said pinned magnetic layer are Fe, Co, Ni or the alloys thereof;

The non-magnetic metal layer of said intermediate layer is Ti, Zn, ZnMn, Cr, Ru, Cu, V or TiC;

said insulation potential barrier layer of the intermediate layer is Al₂O₃, MgO, TiO, ZnO, (ZnMn)O, CrO, VO, or TiCO;

The component materials of said soft magnetic layer are Co, Fe, Ni or the metal alloys thereof, or non-crystal CO_100-x-yFe_xB_y, wherein 0<

x<

100, 0<

y≦

20, or NiFeSiB, or Heusler alloys;

The component materials of said capping layer are Ta, Cu, Ru, Pt, Ag, Au, Cr or the alloys thereof.

7. The magnetic multilayer film according to claim 1, characterized in that:

said closed magnetic multilayer film is non-pinning closed ring magnetic multilayer film with double intermediate layers, including;

a buffering conductive layer, a first hard magnetic layer, a first intermediate layer, a soft magnetic layer, a second intermediate layer, a second hard magnetic layer, and a capping layer;

Said buffering conductive layer is composed of metal materials, and the thickness of which is 2-200 nm;

Said first and second hard magnetic layers are composed of materials having large giant magneto resistance effect, and the thickness of which is 2-20 nm;

Said first and second intermediate layers are composed of non-magnetic metal layer or insulation potential barrier layer, and the thickness of the intermediate layer is 0.5-10 nm;

Said soft magnetic layer is composed of ferromagnetic materials having high spin polarizability and low coercive force, and the thickness of which is 1-20 nm;

Said capping layer is composed of non-oxidable metal materials, and the thickness is 2-20 nm.

8. The magnetic multilayer film according to claim 7, characterized in that:

The component materials of said buffering conductive layer are Ta, Ru, Cr, Au, Ag, Pt Ta, W, Ti, Cu, Al, or Si—

Al alloys;

The component materials of said first and second hard magnetic layer are Co, Fe, Ni, CoFe, NiFeCo, CoFeB or CoFeSiB;

The non-magnetic metal layer of said first and second intermediate layer are Ti, Zn, ZnMn, Cr, Ru, Cu, V, or TiC;

the insulation potential barrier layer of said intermediate layer is Al₂O₃, MgO, TiO, ZnO, (ZnMn)O, CrO, VO, or TiCO;

The component materials of said soft magnetic layer are Co, Fe, Ni or their metal alloy NiFe, CoFeSiB, NiFeSiB, or non-crystal Co_100-x-yFe_xB_y, where 0<

x<

100, 0<

y≦

20, or CO₂MnSi, CO₂Cr_0.6Fe_0.4Al;

The component materials of said capping layer are Ta, Cu, Ru, Pt, Ag, Au, Cr or the alloys thereof.

9. The magnetic multilayer film according to claim 1, characterized in that:

said closed magnetic multilayer film is pinning closed ring magnetic multilayer film with double intermediate layers, including;

a buffering conductive layer, a first antiferromagnetic pinning layer, a first pinned magnetic layer, a first intermediate layer, a soft magnetic layer, a second intermediate layer, a second pinned magnetic layer, a second antiferromagnetic pinning layer, and a capping layer;

Said buffering conductive layer is composed of metal materials, and the thickness is 2-200 nm;

Said first and second anti-ferromagnetic pining layer are both composed of anti-ferromagnetic alloys, the thickness of which is 3-30 nm;

Said first and second pinned magnetic layer are composed of ferromagnetic metals with high spin polarizability, and the thickness is 2-20 nm;

Said first and second intermediate layer are composed of a non-magnetic metal layer or an insulation potential barrier layer, and the thickness of the intermediate layer is 0.5-10 nm;

Said soft magnetic layer is composed of ferromagnetic materials having high spin polarizability and low coercive force, and the thickness is 1-20 nm;

Said Capping layer is composed of non-oxidable metal materials, the thickness of which is 2-20 nm.

10. The magnetic multilayer film according to claim 9, characterized in that:

The component materials of said buffering conductive layer are Ta, Ru, Cr, Au, Ag, Pt, Ta, W, Ti, Cu, Al, or Si—

Al alloys;

The component materials of said first and second anti-ferromagnetic pinning layer are IrMn, FeMn, PtMn, CrMn or Pt (Cr, Mn) alloys;

The component materials of said first and second pinned magnetic layer are Fe, Co, Ni or the alloys thereof;

The component materials of the non-magnetic metal layer of said first and second intermediate layer are Ti, Zn, ZnMn, Cr, Ru, Cu, V or TiC;

the component materials of the insulation potential barrier layer of said intermediate layer are Al₂O₃, MgO, TiO, ZnO, (ZnMn)O, CrO, VO, or TiCO;

The component materials of said soft magnetic layer are Co, Fe, Ni or the alloys thereof, or non-crystal Co_100-x-yFe_xB_y, wherein 0<

x<

100, 0<

y≦

20, or NiFeSiB, or Heusler alloys;

The component materials of said capping layer are Ta, Cu, Ru, Pt, Ag, Au, Cr, or the alloys thereof.

11. A magnetic random access memory made of magnetic multilayer film magnetic memory cells according to claim 1, 3, 5, 7, or 9, including:

Memory reading and writing control unit array composed of transistor units, the reading and writing control unit array being integrated in the semiconductor substrate;

Memory cells and the array thereof;

A transitional metal layer connecting the said transistor units with the magnetic multilayer film memory cells;

And word line, bit line and ground line, said word line being also the grid of said transistor, said bit line being disposed above said magnetic multilayer film memory cells, vertical to said word line, and connecting to said magnetic multilayer film memory cells directly;

characterized in;

the cross section of the magnetic multilayer film in said magnetic multilayer film memory cells is a closed elliptic ring, the diameter of minor axis of the interior closed elliptic ring is 10-10000 nm, the ratio of minor axis vs. major axis is 1;

1-1;

5, the diameter of minor axis of the exterior closed elliptic ring is 20-200000 nm, the width of the ring is 10-100000 nm;

the elliptic ring whose ratio of minor axis vs. major axis is 1;

1 is a circular ring.

12. A method of accessing the magnetic random access memory of closed magnetic multilayer film of claim 11, which realizes the reading and writing operation of MRAM by control of the current magnitude and direction flowing through the memory cell RML, the method including the following steps:

controlling the current flowing through the memory cell RML of closed magnetic multilayer film smaller than the low threshold I.sub.C1, the magnetic state of bit layer will not change, thus the reading operation of MRAM is realized, said bit layer is soft magnetic layer;

controlling the current flowing through the memory cell RML of closed magnetic multilayer film to make it larger than the low threshold I.sub.C1, and smaller than high threshold I.sub.C2, the magnetic state of the bit layer in memory cell RML of closed magnetic multilayer film will be changed by the current direction, the magnetic state of its bit layer is oriented clockwise or counter-clockwise by the positive and negative spin polarized tunneling current, i.e, the combined effect of the driving action and spin torque of the ring shaped magnetic field induced by the polarized tunneling current, so that the magnetic states of the bit layer and pinned magnetic layer or hard magnetic layer are same or opposite along the clockwise or counter-clockwise direction, i.e, the magnetization are parallel or counter-parallel, thus two states of low and high resistance are obtained, i.e, the two states of high output voltage and low output voltage, thus, the writing operation of EM can be realized by control of the current magnitude and direction;

said low threshold I_C1=current density J_C1×

area of cross section of closed magnetic multilayer film, current density J_C1=10−

10² A/cm²;

said high threshold I_C2=current density J_C2×

area of cross section of closed magnetic multilayer film, current density J_C2=10²−

10⁶ A/cm².

13. Method of preparing said magnetic multilayer film in claim 1, including following steps:

1) Selecting a substrate, on which, after the cleaning with conventional method, depositing a bottom buffering conductive layer in a conventional film growth device;

2) Depositing each layer of the magnetic multilayer film in sequence on the bottom buffering conductive layer with conventional film growth method;

when depositing the magnetic layer, a plane inductive magnetic field of 50-50000e is selectively applied;

3) Processing the substrate on which the magnetic multilayer film is deposited in step

     2) into structure of closed circular ring or elliptic ring by techniques of micro-fabrication;

The detailed steps of said micro-fabrication are;

after coating resist and pre-baking, according to the required closed patterns the substrate is exposed on an ultra-violet, extreme ultra-violet exposing machine or electron beam exposing machine, then after developing, fixing and post-baking, the magnetic multilayer film is etched into closed shape by ion etching method, and at last, the resist is stripped off by dipping into stripping chemicals;

4) Depositing a 100-1000 nm insulation layer on the etching formed closed magnetic multilayer film of step

     3) by conventional film growth method to bury each closed ring shaped multilayer film and separated into different cells;

5) Etching the insulation layer at the position where the closed multilayer film is deposited, to expose the magnetic multilayer film buried under the insulation layer, by ultraviolet, extreme ultraviolet lithography or electron beam lithography of micro-fabrication techniques and focusing ion beam etching or chemical reaction dry etching or chemical reaction wet etching, so that the closed magnetic multilayer film of present invention is obtained.

14. A geometric shaped magnetic multilayer film including each layer of a conventional magnetic multilayer film deposited on a substrate, characterized in:

the cross section of said magnetic multilayer film is a closed elliptic ring, the geometric shaped magnetic multilayer film further includes a metal core which is positioned at the geometric center of said magnetic multilayer film and has a cross section of corresponding shape;

the magnetic moment or flux of the ferromagnetic thin film in the magnetic multilayer film is in clockwise or counter-clockwise closed state.

15. The magnetic multilayer film according to claim 14, characterized in:

the minor axis of said elliptic metal core is 5-50000 nm, the ratio of minor axis vs. major axis of the ellipse is 1;

1-1;

5.

16. The closed magnetic multilayer film with a metal core according to claim 15, characterized in:

the materials of said metal core are Au, Ag, Pt, Ta, W, Ti, Cu, Al or Si—

Al alloys.

17. Method of preparing closed magnetic multilayer film with a metal core according to claim 14, including following steps:

1) Selecting a substrate, and depositing the bottom buffering conductive layer in a conventional film growth device after the substrate being cleaned via conventional method, the bottom buffering conductive layer will become conductive electrodes in subsequent fabrication process;

2) Depositing each layer of the magnetic multilayer film in sequence on the bottom buffering conductive layer by conventional film growth method;

when depositing the magnetic layer, a plane inductive magnetic field of 50-50000e is selectively applied;

3) Processing the substrate on which the magnetic multilayer is deposited in step

     2) into structure of a closed circular ring or elliptic ring by techniques or method of micro-fabrication;

The detailed steps of micro-fabrication are;

after coating resist and pre-baking, according to the required closed patterns the substrate is exposed on an ultra-violet, extreme ultra-violet exposing machine or electron beam exposing machine, then after developing, fixing and post-baking, the magnetic multilayer film is etched into closed shape by ion etching method, and at last, the resist is stripped off by dipping into stripping chemicals;

4) Depositing 100-1000 nm insulation layer on the etching formed closed magnetic multilayer film of step

     3) by conventional film growth method to bury each closed ring shaped multilayer film and separated into different cells;

5) Preparing a metal core in the geometric center of closed ring multilayer film by micro-fabrication techniques, the shape of the metal core matches with that of the closed magnetic multilayer film, and its cross section is a circular ring or a elliptic ring;

6) Etching the insulation layer at the position where the closed multilayer film is deposited to expose the magnetic multilayer film buried under the insulation layer, by ultraviolet, extreme ultraviolet lithography or electron beam lithography of micro-fabrication techniques and focusing ion beam etching or chemical reaction dry etching or chemical reaction wet etching, so that the closed magnetic multilayer film with a metal core of present invention is obtained.

18. A magnetic random access memory made of the magnetic multilayer film magnetic memory cells according to claim 14, including:

Memory reading and writing control unit array composed of transistor units, the reading and writing control unit array being integrated in the semiconductor substrate;

Memory cells and the array thereof;

characterized in;

there is a metal core positioned at the geometric center of the magnetic multilayer film of said memory cell, and the cross section of the metal core has corresponding shape;

A transitional metal layer which connects said transistor units with memory cell of the closed magnetic multilayer film having a metal core;

And a word line and two bit lines, said word line being also the grid of said transistor, said two bit lines being disposed above said memory cell of closed magnetic multilayer film having a metal core, wherein the first bit line is vertical to said word line, and is directly connected to said memory cell of closed magnetic multilayer film having a metal core, the second bit line connects directly to the metal core in the memory cell of closed magnetic multilayer film having a metal core, and being separated with the first bit line by an insulation layer.

19. The method of accessing the magnetic random access memory of closed magnetic multilayer film of claim 18, which realizes the writing operation of MRAM by the current applied to the metal core in the memory cell RML, and the reading operation of MRAM by the tunneling current applied to the closed magnetic multilayer film in the memory cell RML, the method including the following steps:

controlling the current flowing through the memory cell of closed magnetic multilayer film having a metal core smaller than the low threshold I.sub.C1, the magnetic state of bit layer will not change, this the reading operation of MRAM is realized;

controlling the current flowing through the metal core in the memory cell of closed magnetic multilayer film having the metal core, since the magnetic field created by the current has a ring shaped distribution, the writing operation of MRAM can be realized by control of the magnetic state of the closed magnetic multilayer film, specifically;

when the current applied to the metal core in the memory cell RML of closed magnetic multilayer film having the metal core is larger than low threshold I.sub.C1, and smaller than high threshold I.sub.C2, the magnetic state of the bit layer in memory cell of closed magnetic multilayer film will be changed by the current direction, and the magnetic states of its bit layer is oriented clockwise or counter-clockwise by the clockwise or counter-clockwise magnetic field created by positive and negative driving current, so that the magnetic states of bit layer and the pinned magnetic layer or hard magnetic layer are same or opposite along the clockwise or counter-clockwise direction, respectively, thus, two states of low and high resistance are obtained, that is to say, the writing operation of MRAM can be realized by control the current direction.

20. A magnetic random access memory of said closed magnetic multilayer film having a metal core according to claim 14, including:

A memory reading and writing control unit array composed of a first and second transistor unit, the reading and writing control unit array being integrated in the semiconductor substrate;

the first transistor switch controls reading operation, the second transistor switch controls writing operation;

the grid of the first transistor acts also as the first word line, the grid of the second transistor acts the second word line;

Memory cell and the array thereof;

characterized in;

there is a metal core positioned at the geometric center of the magnetic multilayer film of said memory cell, and the cross section of the metal core has corresponding shape;

A first, second and third conductive contact hole are respectively disposed above the common drain of the transistor, the source of the first transistor and the source of the second transistor, and are connected to the transitional metal layer thereon, respectively;

the transitional metal layer on the first contact hole also acts as the ground line;

the fourth conductive contact hole connects to the third transitional metal layer;

said third transitional metal layer acts as bottom conductive electrode which connects to the lower end of said closed magnetic multilayer film having the metal core, the bit line is disposed on the top of closed magnetic multilayer film having the metal core and connected therewith;

the upper end of the metal core in the closed magnetic multilayer film having the metal core contacts with the bit line, and the lower end connects to the first transitional metal layer;

the fifth insulation layer covers the bit line.

21. The geometric shaped magnetic multilayer film according to claim 14, characterized in that:

the magnetic multilayer film whose cross section is elliptic shaped is non-pinning magnetic multilayer film, including a buffering conductive layer, a hard magnetic layer, an intermediate layer, a soft magnetic layer and a capping layer;

said buffering conductive layer is composed of metal materials, and the thickness is 2-200 nm;

said hard magnetic layer is composed of giant magneto resistance materials, and the thickness is 2-20 nm;

said intermediate layer comprising non-magnetic metal layer or insulation potential barrier layer, the thickness of the intermediate layer is 0.5-10 nm;

the component materials of said soft magnetic layer are ferromagnetic materials with high spin polarization and low coercive force, and the thickness of said soft magnetic layer is 1-20 nm;

said capping layer is composed of non-oxidable metal materials, and the thickness is 2-20 nm.

22. The geometric shaped magnetic multilayer film according to claim 21, characterized in that:

the component materials of said buffering conductive layer are Ta, Ru, Cr, Au, Ag, Pt, Ta, W, Ti, Cu, Al, or Si—

Al alloys;

the component materials of said hard magnetic layer are Co, Fe, Ni, CoFe, NiFeCo, CoFeB or CoFeSiB;

the non-magnetic metal layer of said intermediate layer is Ti, Zn, ZnMn, Cr, Ru, Cu, V or TiC;

said insulation potential barrier layer of the intermediate layer is Al2O3, MgO, TiO, ZnO, (ZnMn)O, CrO, VO, or TiCO;

the component materials of said soft magnetic layer are Co, Fe, Ni or the metal alloys thereof, the alloys are NiFe, CoFeSiB or NiFeSiB, or non-crystal Co100-x-yFexBy, wherein 0<

x<

100, 0<

y≦

20, or Co2MnSi, Co2Cr0.6Fe0.4Al;

the component materials of said capping layer are Ta, Cu, Ru, Pt, Ag, Au, Cr or the alloys thereof.

23. The geometric shaped magnetic multilayer film according to claim 14, characterized in that:

the closed magnetic multilayer film is pinning magnetic multilayer film, including a buffering conductive layer, an anti-ferromagnetic pinning layer, a pinned magnetic layer, an intermediate layer, a soft magnetic layer and a capping layer;

said buffering conductive layer is composed of metal materials, the thickness is 2-200 nm;

said anti-ferromagnetic pinning layer is composed of anti-ferromagnetic alloys, the thickness is 3-30 nm;

said pinned magnetic layer is composed of ferromagnetic metals of high spin polarization, and the thickness is 2-20 nm;

said intermediate layer is composed of non-magnetic metal layer or insulation potential barrier layer, the thickness of the intermediate layer is 0.5-10 nm;

said soft magnetic layer is composed of ferromagnetic materials of high spin polarizability and low coercive force, and the thickness is 1-20 nm;

said capping layer is composed of non-oxidable metal materials, and the thickness is 2-20 nm.

24. The geometric shaped magnetic multilayer film according to claim 23, characterized in that:

the component materials of said buffering conductive layer are Ta, Ru, Cr, Au, Ag, Pt, Ta, W, Ti, Cu, Al, or Si—

Al alloys;

the component materials of said antiferromagnetic pinning layer are IrMn, FeMn, PtMn, CrMn, or Pt (Cr, Mn) alloys;

the component materials of said pinned magnetic layer are Fe, Co, Ni or the alloys thereof;

the non-magnetic metal layer of said intermediate layer is Ti, Zn, ZnMn, Cr, Ru, Cu, V or TiC;

said insulation potential barrier layer of the intermediate layer is Al2O3, MgO, TiO, ZnO, (ZnMn)O, CrO, VO, or TiCO;

the component materials of said soft magnetic layer are Co, Fe, Ni or the metal alloys thereof, or non-crystal Co100-x-yFexBy, wherein 0<

x<

100, 0<

y≦

20, or NiFeSiB, or Heusler alloys;

the component materials of said capping layer are Ta, Cu, Ru, Pt, Ag, Au, Cr or the alloys thereof.

25. The magnetic multilayer film according to claim 14, characterized in that:

said closed magnetic multilayer film is non-pinning closed ring magnetic multilayer film with double intermediate layers, including;

a buffering conductive layer, a first hard magnetic layer, a first intermediate layer, a soft magnetic layer, a second intermediate layer, a second hard magnetic layer, and a capping layer;

said buffering conductive layer is composed of metal materials, and the thickness of which is 2-200 nm;

said first and second hard magnetic layers are composed of materials having large giant magneto resistance effect, and the thickness of which is 2-20 nm;

said first and second intermediate layers are composed of non-magnetic metal layer or insulation potential barrier layer, and the thickness of the intermediate layer is 0.5-10 nm;

said soft magnetic layer is composed of ferromagnetic materials having high spin polarizability and low coercive force, and the thickness of which is 1-20 nm;

said capping layer is composed of non-oxidable metal materials, and the thickness is 2-20 nm.

26. The magnetic multilayer film according to claim 25, characterized in that:

the component materials of said buffering conductive layer are Ta, Ru, Cr, Au, Ag, Pt, Ta, W, Ti, Cu, Al, or Si—

Al alloys;

the component materials of said first and second hard magnetic layer are Co, Fe, Ni, CoFe, NiFeCo, CoFeB or CoFeSiB;

the non-magnetic metal layer of said first and second intermediate layer are Ti, Zn, ZnMn, Cr, Ru, Cu, V, or TiC;

the insulation potential barrier layer of said intermediate layer is Al2O3, MgO, TiO, ZnO, (ZnMn)O, CrO, VO, or TiCO;

the component materials of said soft magnetic layer are Co, Fe, Ni or their metal alloy NiFe, CoFeSiB, NiFeSiB, or non-crystal Co100-x-yFexBy, where 0<

x<

100, 0<

y≦

20, or Co2MnSi, Co2Cr0.6Fe0.4Al;

the component materials of said capping layer are Ta, Cu, Ru, Pt, Ag, Au, Cr or the alloys thereof.

27. The magnetic multilayer film according to claim 14, characterized in that:

said closed magnetic multilayer film is pinning closed ring magnetic multilayer film with double intermediate layers, including;

a buffering conductive layer, a first antiferromagnetic pinning layer, a first pinned magnetic layer, a first intermediate layer, a soft magnetic layer, a second intermediate layer, a second pinned magnetic layer, a second antiferromagnetic pinning layer, and a capping layer;

said buffering conductive layer is composed of metal materials, and the thickness is 2-200 nm;

said first and second anti-ferromagnetic pining layer are both composed of anti-ferromagnetic alloys, the thickness of which is 3-30 nm;

said first and second pinned magnetic layer are composed of ferromagnetic metals with high spin polarizability, and the thickness is 2-20 nm;

said first and second intermediate layer are composed of a non-magnetic metal layer or an insulation potential barrier layer, and the thickness of the intermediate layer is 0.5-10 nm;

said soft magnetic layer is composed of ferromagnetic materials having high spin polarizability and low coercive force, and the thickness is 1-20 nm;

said Capping layer is composed of non-oxidable metal materials, the thickness of which is 2-20 nm.

28. The magnetic multilayer film according to claim 27, characterized in that:

the component materials of said buffering conductive layer are Ta, Ru, Cr, Au, Ag, Pt, Ta, W, Ti, Cu, Al, or Si—

Al alloys;

the component materials of said first and second anti-ferromagnetic pinning layer are IrMn, FeMn, PtMn, CrMn or Pt (Cr, Mn) alloys;

the component materials of said first and second pinned magnetic layer are Fe, Co, Ni or the alloys thereof;

the component materials of the non-magnetic metal layer of said first and second intermediate layer are Ti, Zn, ZnMn, Cr, Ru, Cu, V or TiC;

the component materials of the insulation potential barrier layer of said intermediate layer are Al2O3, MgO, TiO, ZnO, (ZnMn)O, CrO, VO, or TiCO;

the component materials of said soft magnetic layer are Co, Fe, Ni or the alloys thereof, or non-crystal Co100-x-yFexBy, wherein 0<

x<

100, 0<

y≦

20, or NiFeSiB, or Heusler alloys;

the component materials of said capping layer are Ta, Cu, Ru, Pt, Ag, Au, Cr, or the alloys thereof.

29. A geometric shaped magnetic multilayer film, including each layer of a conventional magnetic multilayer film deposited on a substrate, characterized in that:

the cross section of said magnetic multilayer film is a closed elliptic ring, the magnetic moment or flux of the ferromagnetic thin film in the magnetic multilayer film is in clockwise or counter-clockwise closed state;

wherein the interior minor axis of the elliptic ring shaped magnetic multilayer'"'"'s cross section is 10-100000 nm, the ratio of minor axis vs. major axis is 1;

1-1;

5, the exterior minor axis of the ellipse is 20-200000 nm, the width of the ring is 10-100000 nm, said magnetic multilayer film is non-pinning closed ring magnetic multilayer film with double intermediate layers, including a buffering conductive layer, a first hard magnetic layer, a first intermediate layer, a soft magnetic layer, a second intermediate layer, a second hard magnetic layer, and a capping layer;

said buffering conductive layer is composed of metal materials, and the thickness of which is 2-200 nm;

said first and second hard magnetic layers are composed of materials having large giant magneto resistance effect, and the thickness of which is 2-20 nm;

said first and second intermediate layers are composed of non-magnetic metal layer or insulation potential barrier layer, and the thickness of the intermediate layer is 0.5-10 nm;

said soft magnetic layer is composed of ferromagnetic materials having high spin polarizability and low coercive force, and the thickness of which is 1-20 nm; and

said capping layer is composed of non-oxidable metal materials, and the thickness is 2-20 nm.