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Process of patterning small scale devices

  • US 7,939,247 B2
  • Filed: 08/29/2008
  • Issued: 05/10/2011
  • Est. Priority Date: 08/29/2008
  • Status: Expired due to Fees
First Claim
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1. A process comprising:

  • forming a first mask on an underlying layer, the first mask having two adjacent portions with an open gap therebetween; and

    depositing a second mask material within the open gap and at an inclined angle with respect to an upper surface of the underlying layer to form a second mask,wherein an edge of the first mask blocks the deposition of the second mask material on a portion of the open gap that is adjacent to the edge wherein sidewalls of the first mask forming the open gap extend in a substantially perpendicular manner from the upper surface of the underlying layer to the edge, andwherein the second mask formed within the open gap abuts the first mask on a side of the open gap opposite to the edge.

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