Process of patterning small scale devices
First Claim
1. A process comprising:
- forming a first mask on an underlying layer, the first mask having two adjacent portions with an open gap therebetween; and
depositing a second mask material within the open gap and at an inclined angle with respect to an upper surface of the underlying layer to form a second mask,wherein an edge of the first mask blocks the deposition of the second mask material on a portion of the open gap that is adjacent to the edge wherein sidewalls of the first mask forming the open gap extend in a substantially perpendicular manner from the upper surface of the underlying layer to the edge, andwherein the second mask formed within the open gap abuts the first mask on a side of the open gap opposite to the edge.
5 Assignments
0 Petitions
Accused Products
Abstract
A process is provided that includes forming a first mask on an underlying layer, where the mask has two adjacent portions with an open gap therebetween, and depositing a second mask material within the open gap and at an inclined angle with respect to an upper surface of the underlying layer to form a second mask. In another implementation, a process is provided that includes forming a first mask on an underlying layer, where the mask has a pattern that includes an open gap, and depositing a second mask material within the open gap to form a second mask, where particles of the second mask material are directed in parallel or substantially in parallel to a line at an inclined angle with respect to an upper surface of the underlying layer.
-
Citations
20 Claims
-
1. A process comprising:
-
forming a first mask on an underlying layer, the first mask having two adjacent portions with an open gap therebetween; and depositing a second mask material within the open gap and at an inclined angle with respect to an upper surface of the underlying layer to form a second mask, wherein an edge of the first mask blocks the deposition of the second mask material on a portion of the open gap that is adjacent to the edge wherein sidewalls of the first mask forming the open gap extend in a substantially perpendicular manner from the upper surface of the underlying layer to the edge, and wherein the second mask formed within the open gap abuts the first mask on a side of the open gap opposite to the edge. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
-
-
11. A process comprising:
-
forming a first mask on an underlying layer, the first mask having a pattern that includes an open gap; and depositing a second mask material within the open gap to form a second mask, wherein particles of the second mask material are directed in parallel or substantially in parallel to a line at an inclined angle with respect to an upper surface of the underlying layer, wherein an edge of the first mask blocks the deposition of the second mask material on a portion of the open gap that is adjacent to the edge, and wherein the second mask formed within the open gap abuts the first mask on a side of the open gap opposite to the edge wherein sidewalls of the first mask forming the open gap extend in a substantially perpendicular manner from the upper surface of the underlying layer to the edge. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20)
-
Specification