Nanomembranes for remote sensing

• US 7,939,346 B2
• Filed: 05/25/2007
• Issued: 05/10/2011
• Est. Priority Date: 05/25/2007
• Status: Active Grant

• Current Assignee: Wisconsin Alumni Research Foundation (University of Wisconsin System)
• Original Assignee: Wisconsin Alumni Research Foundation (University of Wisconsin System)
• Inventors: Blick, Robert H., Nowak, Robert David
• Primary Examiner(s): ALEXANDER, LYLE
• Application Number:
  US11/753,919
• Publication Number:
  US 20080293152A1
• Time in Patent Office: 1,446 Days
• Field of Search: 436/527, 422/68.1
• US Class Current: 436/527
• CPC Class Codes: G01D 5/48 using wave or particle radiation means G01D5/26 takes precedence
• CPC Class Codes: G01N 21/77 by observing the effect on a chemical indicator

Abstract

The present invention provides sensors for use in detecting the presence or absence of analytes, systems incorporating the sensors, and methods for using the sensors. The sensors include thin membranes that undergo a detectable geometry change upon exposure to an analyte. In one exemplary embodiment, the sensors are small, thin-film membranes that include a stained semiconductor bilayer, wherein an interaction between the membrane and an analyte induces a detectable change in a strain-induced curvature of the membrane.

Claims

1. A method for detecting the presence of an analyte, the method comprising exposing a plurality of membranes to an environment comprising, or suspected of comprising, the analyte, and detecting a change in the geometry of the membranes caused by an interaction of the analyte with the plurality of membranes, wherein the membranes have a thickness of no greater than about 200 nm and lateral dimensions of no greater than about 2000 microns, wherein the membranes are made from strained semiconductor bilayers comprising at least two layers of semiconductor materials, wherein one layer is under strain with respect to the other layer due to a lattice mismatch between the two layers, and further wherein the change in the geometry of the membrane is a change in a strain-induced curvature of the membrane.

2. The method of claim 1, wherein the membranes have a thickness of no greater than about 100 nm and lateral dimensions of no greater than about 200 microns.

3. The method of claim 1, wherein the membranes have a substantially tubular or helical shape and the measured change in geometry is a change in the average radius of curvature of the substantially tubular membranes.

4. The method of claim 1, wherein the measured change in geometry is a change in a radius of curvature in a first state where the radius of curvature of at least some of the membranes is greater than one of the lateral dimensions of the membranes, and a second state where the radius of curvature of the membranes is less than a lateral dimension of the membranes.

5. The method of claim 1, wherein the strained semiconductor bilayer comprises a SiGe layer and a Si layer.

6. The method of claim 1, wherein the membranes have one or more analyte receptors bound thereto and the change in the geometry of the membranes is caused by the binding of the analyte to the analyte receptors.

7. The method of claim 1, wherein the step of detecting a change in the geometry of the membranes comprises irradiating the membranes with electromagnetic radiation and detecting an electromagnetic response.

8. The method of claim 1, wherein the measured change in geometry is a change in the curvature at one or more edges of the membrane.

9. The method of claim 8, wherein the membranes are anchored to a substrate.

10. The method of claim 1, wherein the environment is a liquid environment.

11. The method of claim 1, wherein the environment is a vapor environment.

12. The method of claim 1, wherein the membranes have a ratio of thickness to length and a ratio of thickness to width in the range from 1:

20 to 1;

500.

13. A system for detecting the presence of an analyte, the system comprising:

(a) a plurality of membranes, wherein the membranes have a thickness of no greater than about 200 nm and lateral dimensions of no greater than about 1000 microns and further wherein the membranes have one or more analyte receptors bound thereto, the analyte receptors characterized in that they specifically bind to an analyte, the membranes characterized in that they undergo a change in their radius of curvature when the analytes specifically bind to the analyte receptors, and further wherein the membranes are made from strained semiconductor bilayers comprising at least two layers of semiconductor materials wherein one layer is under strain with respect to the other layer due to a lattice mismatch between the two layers, and further wherein the change in the geometry of the membrane is a change in a strain-induced curvature of the membrane;

(b) an electromagnetic signal generator adapted to direct an electromagnetic signal onto the plurality of membranes; and

(c) a detector adapted to detect an electromagnetic signal reflected from the plurality of membranes.

14. The system of claim 13, wherein the membranes have a thickness of no greater than about 100 nm and lateral dimensions of no greater than about 200 microns.

15. The system of claim 13, wherein the membranes are anchored to a substrate.

16. A system for detecting the presence of an analyte, the system comprising:

(a) a plurality of membranes, wherein the membranes have a thickness of no greater than about 200 nm and lateral dimensions of no greater than about 1000 microns;

(b) an electromagnetic signal generator adapted to direct an electromagnetic signal onto the plurality of membranes; and

(c) a detector adapted to detect an electromagnetic signal reflected from the plurality of membranes, wherein the membranes are made from strained semiconductor bilayers comprising at least two layers of semiconductor materials, wherein one layer is under strain with respect to the other layer due to a lattice mismatch between the two layers, and further wherein the change in the geometry of the membrane is a change in a strain-induced curvature of the membrane.

17. The system of claim 16, wherein the strained semiconductor bilayer comprises a SiGe layer and a Si layer.