E-beam inspection structure for leakage analysis
First Claim
1. A method of forming a device comprising:
- providing a test structure on a substrate which detects various types of leakage defects,the test structure capable of quantifying magnitude of leakage based on grey scale;
differentiating killer leakage defects comprising,forming a first level metal contacting contacts coupled to the test structure;
performing a voltage contrast (VC) test by scanning the test structure to obtain a VC test result, wherein the VC test is performed prior to forming the first level metal;
performing an electrical test on the test structure to obtain an electrical test result after forming the first level metal, andcorrelating the electrical test results and VC test results to determine which elements of the test structure are defective;
determining a solution for the killer defects; and
fabricating the device on the substrate incorporating the solution.
1 Assignment
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Accused Products
Abstract
A testing structure, and method of using the testing structure, where the testing structure comprised of at least one of eight test structures that exhibits a discernable defect characteristic upon voltage contrast scanning when it has at least one predetermined structural defect. The eight test structures being: 1) having an Active Area (AA)/P-N junction leakage; 2) having an isolation region to ground; 3) having an AA/P-N junction and isolation region; 4) having a gate dielectric leakage and gate to isolation region to ground; 5) having a gate dielectric leakage through AA/P-N junction to ground leakage; 6) having a gate dielectric to ground and gate/one side isolation region leakage to ground; 7) having an oversized gate dielectric through AA/P-N junction to ground leakage; and 8) having an AA/P-N junction leakage gate dielectric leakage.
93 Citations
20 Claims
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1. A method of forming a device comprising:
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providing a test structure on a substrate which detects various types of leakage defects, the test structure capable of quantifying magnitude of leakage based on grey scale; differentiating killer leakage defects comprising, forming a first level metal contacting contacts coupled to the test structure; performing a voltage contrast (VC) test by scanning the test structure to obtain a VC test result, wherein the VC test is performed prior to forming the first level metal; performing an electrical test on the test structure to obtain an electrical test result after forming the first level metal, and correlating the electrical test results and VC test results to determine which elements of the test structure are defective; determining a solution for the killer defects; and fabricating the device on the substrate incorporating the solution. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A method of forming a device comprising:
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providing a test structure on a substrate which detects various types of leakage defects, the test structure capable of quantifying magnitude of leakage based on grey scale; differentiating killer leakage defects comprising, forming a first level metal contacting contacts coupled to the test structure; performing a voltage contrast (VC) test by scanning the test structure to obtain VC test results, wherein the VC test is performed prior to forming the first level metal; performing an electrical test on the test structure to obtain electrical test results after forming the first level metal, and correlating the electrical test results and VC test results to determine which elements of the test structure are defective; determining a solution for the killer defects; and fabricating the device incorporating the solution, wherein the device is fabricated on a wafer comprising a plurality of devices. - View Dependent Claims (16, 17, 18, 19)
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20. A method of forming a device comprising:
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providing a test structure on a substrate which detects various types of leakage defects, the test structure capable of quantifying magnitude of leakage based on grey scale, wherein the test structure comprises at least two test structures selected from a plurality of test structures; differentiating killer leakage defects comprising, forming a first level metal contacting contacts coupled to the test structure; performing a voltage contrast (VC) test by scanning the test structure to obtain a VC test result, wherein the VC test is performed prior to forming the first level metal; performing an electrical test on the test structure to obtain a second test result after forming the first level metal, and correlating the VC and electrical test results to determine which elements of the test structure are defective; determining a solution for the killer defects; and fabricating the device incorporating the solution, wherein the device is fabricated on a wafer comprising a plurality of devices.
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Specification