Nitride-based semiconductor light emitting device and manufacturing method thereof
First Claim
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1. A method of manufacturing a nitride-based semiconductor light-emitting device comprising:
- providing a support substrate, a reflective layer, a p-type nitride-based semiconductor layer, a light-emitting layer, an n-type nitride-based semiconductor layer and an n-type InaGa1-aN (0≦
a≦
1) layer layered in this order, wherein the light-emitting layer, the n-type nitride-based semiconductor layer and the n-type InaGa1-aN (0≦
a≦
1) layer are formed using a growth substrate;
forming irregularities on a light extraction surface on an upper surface of said n-type InaGa1-aN(0≦
a≦
1) layer by removing the growth substrate; and
providing an n-type electrode on the upper surface of the n-type InaGa1-aN (0≦
a≦
1) layer;
wherein, the reflective layer is in ohmic contact with the p-type nitride-based semiconductor layer and functions as a p-type-use electrode; and
the p-type use electrode is a layer or a stack selected from a group consisting of a Pd layer, an Ag layer, a stack of a Pd layer and an Au layer, a stack of an Ag layer and an Au layer, and a stack of a Pd layer, an Ag layer and an Au layer.
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Abstract
The nitride-based semiconductor light-emitting device and manufacturing method thereof are disclosed: the nitride-based semiconductor light-emitting device includes a reflective layer formed on a support substrate, a p-type nitride-based semiconductor layer, a light-emitting layer and an n-type nitride-based semiconductor layer successively formed on the reflective layer, wherein irregularities are formed on a light extracting surface located above the n-type nitride-based semiconductor layer.
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Citations
3 Claims
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1. A method of manufacturing a nitride-based semiconductor light-emitting device comprising:
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providing a support substrate, a reflective layer, a p-type nitride-based semiconductor layer, a light-emitting layer, an n-type nitride-based semiconductor layer and an n-type InaGa1-aN (0≦
a≦
1) layer layered in this order, wherein the light-emitting layer, the n-type nitride-based semiconductor layer and the n-type InaGa1-aN (0≦
a≦
1) layer are formed using a growth substrate;forming irregularities on a light extraction surface on an upper surface of said n-type InaGa1-aN(0≦
a≦
1) layer by removing the growth substrate; andproviding an n-type electrode on the upper surface of the n-type InaGa1-aN (0≦
a≦
1) layer;wherein, the reflective layer is in ohmic contact with the p-type nitride-based semiconductor layer and functions as a p-type-use electrode; and the p-type use electrode is a layer or a stack selected from a group consisting of a Pd layer, an Ag layer, a stack of a Pd layer and an Au layer, a stack of an Ag layer and an Au layer, and a stack of a Pd layer, an Ag layer and an Au layer. - View Dependent Claims (2, 3)
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