Methods of thin film process
First Claim
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1. A method for forming a semiconductor structure, comprising:
- forming a plurality of features across a surface of a substrate, at least one space being between two adjacent features;
forming a first dielectric layer on the features and within the at least one space, wherein the first dielectric layer forms a narrower gap above the opening of the at least one space than a lateral gap deeper within the at least one space;
interacting a portion of the first dielectric layer with a reactant, the reactant derived from a first precursor and a second precursor, to form a first solid product, wherein the solid product comprises material from both the reactant and the first dielectric layer;
decomposing the first solid product to substantially remove the portion of the first dielectric layer; and
forming a second dielectric layer to substantially fill the at least one space.
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Abstract
A method for forming a semiconductor structure includes forming a plurality of features across a surface of a substrate, with at least one space being between two adjacent features. A first dielectric layer is formed on the features and within the at least one space. A portion of the first dielectric layer interacts with a reactant derived from a first precursor and a second precursor to form a first solid product. The first solid product is decomposed to substantially remove the portion of the first dielectric layer. A second dielectric layer is formed to substantially fill the at least one space.
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Citations
25 Claims
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1. A method for forming a semiconductor structure, comprising:
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forming a plurality of features across a surface of a substrate, at least one space being between two adjacent features; forming a first dielectric layer on the features and within the at least one space, wherein the first dielectric layer forms a narrower gap above the opening of the at least one space than a lateral gap deeper within the at least one space; interacting a portion of the first dielectric layer with a reactant, the reactant derived from a first precursor and a second precursor, to form a first solid product, wherein the solid product comprises material from both the reactant and the first dielectric layer; decomposing the first solid product to substantially remove the portion of the first dielectric layer; and forming a second dielectric layer to substantially fill the at least one space. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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19. A method of depositing a dielectric material in a semiconductor structure having a bottom and sidewalls, the method comprising:
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forming a first dielectric layer on the bottom and sidewalls of the structure, wherein the layer partially fills the structure and forms a narrower gap above the opening of the structure than a lateral gap deeper within the structure; interacting a portion of the first dielectric layer with a reactant derived from a first precursor and a second precursor to form a first solid product, wherein the solid product comprises material from both the reactant and the first dielectric layer; thermally treating the first solid product to substantially sublimate the first solid product and form a slanted opening in the structure; and forming a second dielectric layer to substantially fill the spaces. - View Dependent Claims (20, 21, 22, 23, 24, 25)
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Specification