Inhibitors for selective deposition of silicon containing films
First Claim
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1. A method for depositing a single crystalline silicon film, comprising:
- providing a substrate disposed within a chamber;
introducing to the chamber under chemical vapor deposition conditions a silicon precursor, a chlorine-containing etchant and an inhibitor source that reacts to decelerate reactions between the silicon precursor and the chlorine-containing etchant; and
selectively depositing a crystalline Si-containing film onto the substrate.
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Abstract
A method for depositing a single crystalline silicon film comprises: providing a substrate disposed within a chamber; introducing to the chamber under chemical vapor deposition conditions a silicon precursor, a chlorine-containing etchant and an inhibitor source for decelerating reactions between the silicon precursor and the chlorine-containing etchant; and selectively depositing a doped crystalline Si-containing film onto the substrate.
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Citations
25 Claims
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1. A method for depositing a single crystalline silicon film, comprising:
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providing a substrate disposed within a chamber; introducing to the chamber under chemical vapor deposition conditions a silicon precursor, a chlorine-containing etchant and an inhibitor source that reacts to decelerate reactions between the silicon precursor and the chlorine-containing etchant; and selectively depositing a crystalline Si-containing film onto the substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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18. A method of depositing a crystalline Si-containing film, comprising:
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providing a substrate disposed within a chamber; introducing a silicon precursor and a chlorine gas (Cl2) to the chamber; decelerating reactions between the silicon precursor and the chlorine gas by introducing a carbon-containing inhibitor source to the chamber; and selectively depositing the single crystalline Si-containing film onto the substrate. - View Dependent Claims (19, 20, 21, 22, 23, 24, 25)
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Specification