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High output light emitting diode and method for fabricating the same

  • US 7,939,841 B2
  • Filed: 12/28/2005
  • Issued: 05/10/2011
  • Est. Priority Date: 12/31/2004
  • Status: Active Grant
First Claim
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1. A light emitting device having a vertical topology structure comprising:

  • a light emitting diode (LED) structure having a first surface, a second surface, inclined sidewalls and a first side surface, a second side surface, a third side surface, and a fourth side surface, the LED structure comprising a first-type semiconductor layer, an active layer and a second-type semiconductor layer, wherein the inclined sidewalls have grooves continuously and straightly extended along said sidewalls of said layers and are configured to increase the total light emitting area thereof, wherein grooves are respectively formed on the first side, the second side, the third side, and the fourth side surfaces, and each groove has substantially the same depth;

    a first electrode over the first surface of the LED structure;

    a second electrode over the second surface of the LED structure, wherein the first electrode and second electrode are located over the opposite surfaces of the LED structure, respectively;

    a reflective film disposed over the inclined sidewalls of the LED structure, the reflective film comprising an anti-reflection layer and a reflection layer, wherein the reflective film is configured to reflect light emitted from the active layer generally back through the first surface of the LED structure and also configured to serve as a passivation layer.

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