Light-emitting-diode chip comprising a sequence of GAN-based epitaxial layers which emit radiation and a method for producing the same
First Claim
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1. A light-emitting diode chip comprising:
- a GaN-based, radiation-emitting epitaxial layer sequence comprising an active region, an n-doped layer and a p-doped layer; and
a reflective contact metallization assigned to said p-doped layer, said reflective contact metallization configured to reflect radiation emitted by the radiation-emitting layer sequence and comprising;
a radiation permeable contact layer and a reflective layer, wherein said radiation permeable contact layer is arranged between said p-doped layer and said reflective layer, and wherein said reflective layer comprises Ag,wherein the radiation-emitting epitaxial layer sequence is free of a growth substrate.
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Abstract
A light-emitting diode chip (1) comprises a GaN-based, radiation-emitting epitaxial layer sequence (3), an active region (19), an n-doped layer (4) and a p-doped layer (5). The p-doped layer (5) is provided, on its main surface (9) facing away from the active region (19), with a reflective contact metallization (6) comprising a radioparent contact layer (15) and a reflective layer (16). Methods for fabricating LED chips of this type by thin-film technology are provided, as are LED components containing such LED chips.
147 Citations
35 Claims
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1. A light-emitting diode chip comprising:
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a GaN-based, radiation-emitting epitaxial layer sequence comprising an active region, an n-doped layer and a p-doped layer; and a reflective contact metallization assigned to said p-doped layer, said reflective contact metallization configured to reflect radiation emitted by the radiation-emitting layer sequence and comprising; a radiation permeable contact layer and a reflective layer, wherein said radiation permeable contact layer is arranged between said p-doped layer and said reflective layer, and wherein said reflective layer comprises Ag, wherein the radiation-emitting epitaxial layer sequence is free of a growth substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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19. A light-emitting diode chip comprising:
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a GaN-based, radiation-emitting epitaxial layer sequence comprising an active region, an n-doped layer and a p-doped layer; and a reflective contact metallization assigned to said p-doped layer, said reflective contact metallization configured to reflect radiation emitted by the radiation-emitting layer sequence and comprising; a radiation permeable contact layer and a reflective layer, wherein said radiation permeable contact layer is arranged between said p-doped layer and said reflective layer, and wherein said reflective layer covers more than 50% of the main surface of said p-doped layer facing away from said active region, wherein the radiation-emitting epitaxial layer sequence is free of a growth substrate. - View Dependent Claims (20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35)
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Specification