Semiconductor device with forwardly tapered P-type FET gate electrode and reversely tapered N-type FET gate electrode and method of manufacturing same

• US 7,939,895 B2
• Filed: 09/04/2008
• Issued: 05/10/2011
• Est. Priority Date: 09/05/2007
• Status: Active Grant

• Current Assignee: Sony Corporation (Sony Group Corp.)
• Original Assignee: Sony Corporation (Sony Group Corp.)
• Inventors: Fukasaku, Katsuhiko
• Primary Examiner(s): Parker; Kenneth A
• Assistant Examiner(s): Kim; Jay C
• Application Number:
  US12/204,521
• Publication Number:
  US 20090057771A1
• Time in Patent Office: 978 Days
• Field of Search: 257/E21.635, 257/204, 257/206, 257/369, 257/E21.632, 257/E21.636, 257/E21.637, 257/E21.638, 257/E27.062, 257/E27.064, 257/E27.108, 257/E29.134, 257/E29.135
• US Class Current: 257/369
• CPC Class Codes: H01L 21/28097 the final conductor layer next to the insulator being a metallic silicide
• CPC Class Codes: H01L 21/28114 characterised by the sectional shape, e.g. T, inverted-T
• CPC Class Codes: H01L 21/823835 silicided or salicided gate conductors
• CPC Class Codes: H01L 21/823842 gate conductors with different gate conductor materials or different gate conductor implants, e.g. dual gate structures
• CPC Class Codes: H01L 21/82385 gate conductors with different shapes, lengths or dimensions
• CPC Class Codes: H01L 21/823864 with a particular manufacturing method of the gate sidewall spacers, e.g. double spacers, particular spacer material or shape
• CPC Class Codes: H01L 29/42376 characterised by the length or the sectional shape
• CPC Class Codes: H01L 29/4975 being a silicide layer, e.g. TiSi2
• CPC Class Codes: H01L 29/7845 the means being a conductive material, e.g. silicided S/D or Gate

Abstract

Disclosed herein is a semiconductor device including a semiconductor substrate provided with an N-type FET and P-type FET, with a gate electrode of the N-type FET and a gate electrode of the P-type FET having undergone full-silicidation, wherein the gate electrode of the P-type FET has such a sectional shape in the gate length direction that the gate length decreases as one goes upwards from a surface of the semiconductor substrate, and the gate electrode of the N-type FET has such a sectional shape in the gate length direction that the gate length increases as one goes upwards from the surface of the semiconductor substrate.

Claims

1. A semiconductor device comprising a semiconductor substrate with an N-type field effect transistor and a P-type field effect transistor, a gate electrode of said N-type field effect transistor and a gate electrode of said P-type field effect transistor having undergone full-silicidation,

wherein,

said gate electrode of said P-type field effect transistor has such a sectional shape in a gate length direction thereof that the gate length of said P-type field effect transistor decreases proceeding upwards from a surface of said semiconductor substrate, and

said gate electrode of said N-type field effect transistor has such a sectional shape in a gate length direction that the gate length of said N-type field effect transistor increases proceeding upwards from the surface of said semiconductor substrate.

3. The semiconductor device as set forth in claim 1, wherein said gate electrode of said P-type field effect transistor includes Ni₃Si.

4. The semiconductor device as set forth in claim 1, wherein said gate electrode of said N-type field effect transistor includes NiSi₂.

2. A semiconductor device comprising a semiconductor substrate with an N-type field effect transistor and a P-type field effect transistor, a gate electrode of said N-type field effect transistor and a gate electrode of said P-type field effect transistor having undergone full-silicidation,

wherein,

said gate electrode of said P-type field effect transistor has a section having a forwardly tapered shape in relation to a surface of said semiconductor substrate, and

said gate electrode of said N-type field effect transistor has a section having a reversely tapered shape in relation to the surface of said semiconductor substrate.