Betavoltaic cell
First Claim
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1. A Betavoltaic cell comprising:
- a SiC substrate;
structures formed of semiconductor, wherein the structures comprise p-n junctions, and wherein there are voids proximal to the structures; and
electrical contacts formed on the structures, wherein the contacts are adapted to minimize beta radiation backscatter losses.
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Abstract
High aspect ratio micromachined structures in semiconductors are used to improve power density in Betavoltaic cells by providing large surface areas in a small volume. A radioactive beta-emitting material may be placed within gaps between the structures to provide fuel for a cell. The pillars may be formed of SiC. In one embodiment, SiC pillars are formed of n-type SiC. P type dopant, such as boron is obtained by annealing a borosilicate glass boron source formed on the SiC. The glass is then removed. In further embodiments, a dopant may be implanted, coated by glass, and then annealed. The doping results in shallow planar junctions in SiC.
31 Citations
29 Claims
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1. A Betavoltaic cell comprising:
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a SiC substrate; structures formed of semiconductor, wherein the structures comprise p-n junctions, and wherein there are voids proximal to the structures; and electrical contacts formed on the structures, wherein the contacts are adapted to minimize beta radiation backscatter losses. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A Betavoltaic cell comprising:
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a semiconductor substrate; at least one p-n junction formed of semiconductor; and at least one contact electrically coupled to the at least one p-n junction, wherein the at least one contact is adapted to minimize beta radiation backscatter losses. - View Dependent Claims (13, 14, 15, 16, 17, 18)
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19. A Betavoltaic cell comprising:
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a SiC substrate; high aspect ratio pillars supported by the substrate having voids between the pillars; cathode or anode contacts formed on the pillars, wherein the cathode or anode contacts are adapted to minimize beta radiation backscatter losses; an anode or cathode contact formed on a back side of the substrate; and a beta radiation fuel disposed in the voids. - View Dependent Claims (20, 21)
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22. A Betavoltaic cell comprising:
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a semiconductor substrate; structures formed of semiconductor, wherein the structures comprise p-n junctions, and wherein there are voids proximal to the structures; cathode or anode contacts formed on the structures, wherein the cathode or anode contacts are adapted to minimize beta radiation backscatter losses; an anode or cathode contact formed on a back side of the substrate; and a cap formed of semiconductor. - View Dependent Claims (23, 24, 25, 26, 27, 28, 29)
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Specification