Surface-emission laser diode and surface-emission laser array, optical interconnection system, optical communication system, electrophotographic system, and optical disk system

• US 7,940,825 B2
• Filed: 04/24/2009
• Issued: 05/10/2011
• Est. Priority Date: 11/27/2003
• Status: Expired due to Fees

• Current Assignee: Ricoh Company Limited
• Original Assignee: Ricoh Company Limited
• Inventors: Jikutani, Naoto
• Primary Examiner(s): Rodriguez; Armando
• Application Number:
  US12/429,614
• Publication Number:
  US 20090268769A1
• Time in Patent Office: 746 Days
• Field of Search: 372/43.01, 372/44.01, 372/46.013, 372/46.015, 372/50.1, 372/50.11, 372/50.124
• US Class Current: 372/46.013
• CPC Class Codes: H01S 2301/166 Single transverse or lateral mode
• CPC Class Codes: H01S 5/0655 Single transverse or lateral mode emission
• CPC Class Codes: H01S 5/18308 having a special structure for lateral current or light confinement
• CPC Class Codes: H01S 5/18311 using selective oxidation
• CPC Class Codes: H01S 5/18319 comprising a periodical structure in lateral directions
• CPC Class Codes: H01S 5/18333 only above the active layer
• CPC Class Codes: H01S 5/1835 Non-circular mesa
• CPC Class Codes: H01S 5/18355 having a defined polarisation
• CPC Class Codes: H01S 5/18358 containing spacer layers to adjust the phase of the light wave in the cavity
• CPC Class Codes: H01S 5/205 Antiguided structures
• CPC Class Codes: H01S 5/2063 obtained by particle bombardment
• CPC Class Codes: H01S 5/423 having a vertical cavity

Abstract

A surface-emission laser diode includes an active layer, a pair of cavity spacer layers formed at both sides of the active layer, a current confinement structure defining a current injection region into the active layer, and a pair of distributed Bragg reflectors opposing with each other across a structure formed of the active layer and the cavity spacer layers, the current confinement structure being formed by a selective oxidation process of a semiconductor layer, the pair of distributed Bragg reflectors being formed of semiconductor materials, wherein there is provided a region containing an oxide of Al and having a relatively low refractive index as compared with a surrounding region in any of the semiconductor distributed Bragg reflector or the cavity spacer layer in correspondence to a part spatially overlapping with the current injection region in a laser cavity direction.

Claims

1. A surface-emission laser diode, comprising:

an active layer;

a pair of cavity spacer layers formed at both sides of said active layer;

a current confinement structure defining a current injection region into said active layer; and

a pair of distributed Bragg reflectors opposing with each other across a structure formed of said active layer and said pair of cavity spacer layers,

said current confinement structure comprising a high resistance region formed by an ion implantation process,

said pair of distributed Bragg reflectors being formed of semiconductor materials,

wherein there is provided a region containing an oxide of Al and having a relatively low refractive index than a surrounding region in any of said semiconductor distributed Bragg reflector or said cavity spacer layer in correspondence to a part spatially overlapping with said current injection region in a laser cavity direction, and

wherein there is provided any of a GaAs layer or a GaInP mixed crystal layer adjacent with an AlGaAs mixed crystal layer constituting said region of relatively low refractive index with respect to said surrounding region not injected with said molecules containing oxygen and located on an identical plane of said part where said ion implantation of said molecules has been made.

3. A surface-emission laser diode according to claim 1, wherein said region of relatively low refractive index is provided in plural numbers.

4. A surface-emission laser diode according to claim 1, wherein said region of relatively low refractive index is provided inside an n-type distributed Bragg reflector constituting one of said pair of distributed Bragg reflectors.

8. A surface-emission laser diode according to claim 1, wherein said region of relatively low refractive index has an anisotropic shape.

9. A surface-emission laser diode according to claim 1, wherein said active layer comprises a group III-V compound semiconductor material, said group III element comprises at least one of Ga and In, and wherein said group V element comprises one or more of As, N, Sb and P.

10. A surface-emission laser array comprising a plurality of surface-emission laser diodes, said plurality of surface-emission laser diodes being arranged to form an array,

each of said plurality of surface-emission laser diodes comprising the surface-emission laser diode of claim 1.

11. An optical communication system that uses a surface-emission laser diode as a communication optical source,

said surface-emission laser diode comprising the surface-emission laser diode of claim 1.

2. A surface emission laser diode, comprising:

an active layer;

a pair of cavity spacer layers formed at both sides of said active layer;

a current confinement structure defining a current injection region into said active layer; and

a pair of distributed Bragg reflectors opposing with each other across a structure formed of said active layer and said pair of cavity spacer layers,

said current confinement structure comprising a high resistance region formed by an ion implantation process,

said pair of distributed Bragg reflectors being formed of semiconductor materials,

wherein there is provided a region containing an oxide of Al and having a relatively low refractive index than a surrounding region in any of said semiconductor distributed Bragg reflector or said cavity spacer layer in correspondence to a part spatially overlapping with said current injection region in a laser cavity direction, and

wherein an AlGaAs mixed crystal layer, constituting said region of relatively low refractive index with respect to said surrounding region not made with ion implantation of molecules containing oxygen and located on an identical plane perpendicular to said laser cavity direction, is provided at a location corresponding to an anti-node of a standing wave of laser oscillation occurring in said cavity structure, said AlGaAs mixed crystal layer being doped to a higher concentration level as compared with other AlGaAs mixed crystal layers constituting said surface-emission laser diode.

5. A surface-emission laser diode, comprising:

an active layer;

a pair of cavity spacer layers formed at both sides of said active layer;

a current confinement structure defining a current injection region into said active layer; and

a pair of distributed Bragg reflectors opposing with each other across a structure formed of said active layer and said pair of cavity spacer layers,

said current confinement structure comprising a high resistance region formed by an ion implantation process,

said pair of distributed Bragg reflectors being formed of semiconductor materials,

wherein there is provided a region containing an oxide of Al and having a relatively low refractive index than a surrounding region in any of said semiconductor distributed Bragg reflector or said cavity spacer layer in correspondence to a part spatially overlapping with said current injection region in a laser cavity direction, and

wherein there is further provided a region of relatively high refractive index around said region of relatively low refractive index provided in spatial overlapping with said laser cavity region in said laser cavity direction, and wherein there is further provided a cladding region of low refractive index with respect to said high refractive region such that said cladding region is located around said region of high refractive index.

6. A surface-emission laser diode according to claim 5, wherein there is provided an anisotropy in a width of said high refractive region surrounded by said cladding region.

7. A surface-emission laser diode according to claim 5, wherein said cladding region is provided in a pair in a direction perpendicular to said laser cavity direction across a laser cavity region.