Ultra low-loss CMOS compatible silicon waveguides

• US 7,941,023 B2
• Filed: 08/03/2007
• Issued: 05/10/2011
• Est. Priority Date: 12/21/2004
• Status: Active Grant

• Current Assignee: Cisco Technology, Inc. (Cisco Systems, Inc.)
• Original Assignee: Lightwire, Inc. (Cisco Systems, Inc.)
• Inventors: Patel, Vipulkumar, Piede, David, Ghiron, Margaret, Gothoskar, Prakash
• Primary Examiner(s): Le; Uyen-Chau N
• Assistant Examiner(s): TRAN, HOANG Q
• Application Number:
  US11/890,123
• Publication Number:
  US 20070280616A1
• Time in Patent Office: 1,376 Days
• Field of Search: 385/129
• US Class Current: 385/129
• CPC Class Codes: G02B 2006/12061 Silicon
• CPC Class Codes: G02B 2006/12097 Ridge, rib or the like
• CPC Class Codes: G02B 6/122 Basic optical elements, e.g. light-guiding paths
• CPC Class Codes: G02B 6/1228 Tapered waveguides, e.g. integrated spot-size transformers for coupling with fibres G02B6/305
• CPC Class Codes: G02F 1/025 in an optical waveguide structure G02F1/017, G02F1/2257 take precedence

Abstract

A low loss optical waveguiding structure for silicon-on-insulator (SOI)-based arrangements utilizes a tri-material configuration including a rib/strip waveguide formed of a material with a refractive index less than silicon, but greater than the refractive index of the underlying insulating material. In one arrangement, silicon nitride may be used. The index mismatch between the silicon surface layer (the SOI layer) and the rib/strip waveguide results in a majority of the optical energy remaining within the SOI layer, thus reducing scattering losses from the rib/strip structure (while the rib/strip allows for guiding along a desired signal path to be followed). Further, since silicon nitride is an amorphous material without a grain structure, this will also reduce scattering losses. Advantageously, the use of silicon nitride allows for conventional CMOS fabrication processes to be used in forming both passive and active devices.

Claims

1. A method of forming a low loss SOI-based optical waveguiding structure, the method comprising the steps of:

a) providing an SOI structure including a silicon substrate, an insulating layer disposed over the silicon substrate and a relatively thin silicon surface layer disposed over the insulating layer;

b) forming a relatively thick oxide layer over the relatively thin silicon surface layer;

c) depositing an oxide-resistant layer over the relatively thick oxide layer formed in step b);

d) patterning the oxide-resistant layer to define a portion to be used to form the optical waveguiding structure;

e) removing the oxide resistant layer outside of the defined portion patterned in step d) to expose the underlying relatively thick oxide layer;

f) oxidizing the structure of step e), consuming a portion of the relatively thin silicon layer with preferential growth of the relatively thick oxide layer beyond the defined waveguiding portion to the structure, transforming the relatively thin silicon surface layer in the waveguiding portion to exhibit a relatively rounded and smooth profile; and

g) removing the remaining oxide-resistant layer and the relatively thick oxide layer to expose the relatively rounded and smooth, low loss optical waveguiding structure formed within the relatively thin silicon surface layer.

2. The method as defined in claim 1, wherein in performing step b), a thermal oxidation process is used.

3. The method as defined in claim 1, wherein in performing step c), a silicon nitride layer is used as the oxide-resistant layer.

4. The method as defined in claim 1, wherein in performing step f), a local oxidation process is used.

5. The method as defined in claim 4, wherein the local oxidation process is LOCOS.