Rigid-backed, membrane-based chip tooling

• US 7,942,182 B2
• Filed: 01/10/2006
• Issued: 05/17/2011
• Est. Priority Date: 06/14/2005
• Status: Active Grant

• Current Assignee: Cufer Asset Ltd LLC (Intellectual Ventures LLC)
• Original Assignee: Cufer Asset Ltd LLC (Intellectual Ventures LLC)
• Inventors: Frushour, Ross, Trezza, John
• Primary Examiner(s): SELLS, JAMES D
• Application Number:
  US11/329,506
• Publication Number:
  US 20060281292A1
• Time in Patent Office: 1,953 Days
• Field of Search: 156/538, 156/539, 156/556, 156/580, 156/581, 156/583.1, 156/583.3
• US Class Current: 156/581
• CPC Class Codes: H01L 21/4853 Connection or disconnection of other leads to or from a metallisation, e.g. pins, wires, bumps
• CPC Class Codes: H01L 21/6835 using temporarily an auxiliary support
• CPC Class Codes: H01L 21/76898 formed through a semiconductor substrate
• CPC Class Codes: H01L 2221/68327 used during dicing or grinding
• CPC Class Codes: H01L 2221/68345 used as a support during the manufacture of self supporting substrates
• CPC Class Codes: H01L 2221/68363 used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
• CPC Class Codes: H01L 2221/68368 used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
• CPC Class Codes: H01L 2223/6616 Vertical connections, e.g. vias
• CPC Class Codes: H01L 2223/6622 Coaxial feed-throughs in active or passive substrates
• CPC Class Codes: H01L 2224/02372 connecting to a via connection in the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/114 by blanket deposition of the material of the bump connector
• CPC Class Codes: H01L 2224/1147 using a lift-off mask
• CPC Class Codes: H01L 2224/116 by patterning a pre-deposited material
• CPC Class Codes: H01L 2224/11912 the bump being used as a mask for patterning other parts
• CPC Class Codes: H01L 2224/13012 in top view
• CPC Class Codes: H01L 2224/13021 the bump connector being disposed in a recess of the surface
• CPC Class Codes: H01L 2224/1308 being stacked
• CPC Class Codes: H01L 2224/13082 Two-layer arrangements
• CPC Class Codes: H01L 2224/13083 Three-layer arrangements
• CPC Class Codes: H01L 2224/13084 : Four-layer arrangements
• CPC Class Codes: H01L 2224/13099 : Material
• CPC Class Codes: H01L 2224/13111 : Tin [Sn] as principal constituent
• CPC Class Codes: H01L 2224/13144 : Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/13147 : Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/13155 : Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/13166 : Titanium [Ti] as principal constituent
• CPC Class Codes: H01L 2224/13184 : Tungsten [W] as principal constituent
• CPC Class Codes: H01L 2224/1358 : being stacked
• CPC Class Codes: H01L 2224/136 : with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 2224/13609 : Indium [In] as principal constituent
• CPC Class Codes: H01L 2224/16146 : the bump connector connecting to a via connection in the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/16237 : the bump connector connecting to a bonding area disposed in a recess of the surface of the item
• CPC Class Codes: H01L 2224/24226 : the HDI interconnect connecting to the same level of the item at which the semiconductor or solid-state body is mounted, e.g. the item being planar
• CPC Class Codes: H01L 2224/45111 : Tin (Sn) as principal constituent
• CPC Class Codes: H01L 2224/75 : Apparatus for connecting with bump connectors or layer connectors
• CPC Class Codes: H01L 2224/75305 : comprising protrusions
• CPC Class Codes: H01L 2224/81001 : involving a temporary auxiliary member not forming part of the bonding apparatus
• CPC Class Codes: H01L 2224/81011 : Chemical cleaning, e.g. etching, flux
• CPC Class Codes: H01L 2224/81054 : Composition of the atmosphere
• CPC Class Codes: H01L 2224/81136 : involving guiding structures, e.g. spacers or supporting members
• CPC Class Codes: H01L 2224/81193 : wherein the bump connectors are disposed on both the semiconductor or solid-state body and another item or body to be connected to the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/81203 : Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
• CPC Class Codes: H01L 2224/81204 : with a graded temperature profile
• CPC Class Codes: H01L 2224/81825 : Solid-liquid interdiffusion
• CPC Class Codes: H01L 2224/81894 : Direct bonding, i.e. joining surfaces by means of intermolecular attracting interactions at their interfaces, e.g. covalent bonds, van der Waals forces
• CPC Class Codes: H01L 2224/83102 : using surface energy, e.g. capillary forces
• CPC Class Codes: H01L 2224/92125 : the second connecting process involving a layer connector
• CPC Class Codes: H01L 2225/06513 : Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
• CPC Class Codes: H01L 2225/06524 : Electrical connections formed on device or on substrate, e.g. a deposited or grown layer
• CPC Class Codes: H01L 2225/06531 : Non-galvanic coupling, e.g. capacitive coupling
• CPC Class Codes: H01L 2225/06534 : Optical coupling
• CPC Class Codes: H01L 2225/06541 : Conductive via connections through the device, e.g. vertical interconnects, through silicon via [TSV]
• CPC Class Codes: H01L 2225/06555 : Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking
• CPC Class Codes: H01L 2225/06589 : Thermal management, e.g. cooling
• CPC Class Codes: H01L 2225/06593 : Mounting aids permanently on device; arrangements for alignment
• CPC Class Codes: H01L 2225/06596 : Structural arrangements for testing
• CPC Class Codes: H01L 23/427 : Cooling by change of state, e.g. use of heat pipes by liquefied gas H01L23/445
• CPC Class Codes: H01L 23/48 : Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
• CPC Class Codes: H01L 23/481 : Internal lead connections, e.g. via connections, feedthrough structures
• CPC Class Codes: H01L 23/488 : consisting of soldered or bonded constructions bump connectors H01L24/01
• CPC Class Codes: H01L 23/49827 : Via connections through the substrates, e.g. pins going through the substrate, coaxial cables H01L23/49822, H01L23/49833, H01L23/4985, H01L23/49861 take precedence
• CPC Class Codes: H01L 23/5389 : the chips being integrally enclosed by the interconnect and support structures
• CPC Class Codes: H01L 23/552 : Protection against radiation, e.g. light or electromagnetic waves
• CPC Class Codes: H01L 23/66 : High-frequency adaptations
• CPC Class Codes: H01L 24/02 : Bonding areas on insulating substrates, e.g. chip carriers, H01L23/49816, H01L23/49838, H01L23/5389; Manufacturing methods related thereto
• CPC Class Codes: H01L 24/11 : Manufacturing methods for bumps on insulating substrates H01L21/4853
• CPC Class Codes: H01L 24/13 : of an individual bump connector
• CPC Class Codes: H01L 24/16 : of an individual bump connector
• CPC Class Codes: H01L 24/24 : of an individual high density interconnect connector
• CPC Class Codes: H01L 24/75 : Apparatus for connecting with bump connectors or layer connectors
• CPC Class Codes: H01L 24/81 : using a bump connector
• CPC Class Codes: H01L 25/0652 : the devices being arranged next and on each other, i.e. mixed assemblies
• CPC Class Codes: H01L 25/0657 : Stacked arrangements of devices
• CPC Class Codes: H01L 25/18 : the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
• CPC Class Codes: H01L 25/50 : Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00 H01L21/50 takes precedence
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00013 : Fully indexed content
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01002 : Helium [He]
• CPC Class Codes: H01L 2924/01004 : Beryllium [Be]
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01007 : Nitrogen [N]
• CPC Class Codes: H01L 2924/01012 : Magnesium [Mg]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01014 : Silicon [Si]
• CPC Class Codes: H01L 2924/01018 : Argon [Ar]
• CPC Class Codes: H01L 2924/01022 : Titanium [Ti]
• CPC Class Codes: H01L 2924/01023 : Vanadium [V]
• CPC Class Codes: H01L 2924/01024 : Chromium [Cr]
• CPC Class Codes: H01L 2924/01025 : Manganese [Mn]
• CPC Class Codes: H01L 2924/01027 : Cobalt [Co]
• CPC Class Codes: H01L 2924/01028 : Nickel [Ni]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/0103 : Zinc [Zn]
• CPC Class Codes: H01L 2924/01032 : Germanium [Ge]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01042 : Molybdenum [Mo]
• CPC Class Codes: H01L 2924/01046 : Palladium [Pd]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/01049 : Indium [In]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01051 : Antimony [Sb]
• CPC Class Codes: H01L 2924/01052 : Tellurium [Te]
• CPC Class Codes: H01L 2924/01073 : Tantalum [Ta]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01075 : Rhenium [Re]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/04953 : TaN
• CPC Class Codes: H01L 2924/05042 : Si3N4
• CPC Class Codes: H01L 2924/09701 : Low temperature co-fired ceramic [LTCC]
• CPC Class Codes: H01L 2924/10253 : Silicon [Si]
• CPC Class Codes: H01L 2924/10329 : Gallium arsenide [GaAs]
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/19041 : being a capacitor
• CPC Class Codes: H01L 2924/19043 : being a resistor
• CPC Class Codes: H01L 2924/30105 : Capacitance
• CPC Class Codes: H01L 2924/3011 : Impedance
• CPC Class Codes: H01L 2924/3025 : Electromagnetic shielding
• CPC Class Codes: H01S 2301/176 : Specific passivation layers on surfaces other than the emission facet
• CPC Class Codes: H01S 5/02345 : Wire-bonding
• CPC Class Codes: H01S 5/0237 : by soldering
• CPC Class Codes: H01S 5/0422 : with n- and p-contacts on the same side of the active layer
• CPC Class Codes: H01S 5/0425 : Electrodes, e.g. characterised by the structure
• CPC Class Codes: H01S 5/04254 : characterised by the shape
• CPC Class Codes: H01S 5/04257 : having positive and negative electrodes on the same side of the substrate
• CPC Class Codes: H01S 5/183 : having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
• CPC Class Codes: H01S 5/18308 : having a special structure for lateral current or light confinement

Abstract

An apparatus for use with multiple individual chips having a rigid plate, and a deformable membrane located on the plate, the deformable membrane having a thickness sufficient to allow the deformable membrane to peripherally conform to each of the individual multiple chips irrespective of any difference in height among the multiple individual chips and to prevent each of the multiple individual chips from moving in a lateral direction, the deformable membrane being configured to uniformly transfer a vertical force, applied to the rigid plate, to the chips so as to bring, under pressure, a bonding surface of each individual chip into contact with a bonding surface of an element to which the individual chips will be bonded during a connect and release cycle without causing damage to the individual chips or bonding surface.

Claims

1. An apparatus for use with multiple individual chips, the apparatus comprising:

a rigid plate; and

a deformable material located on the rigid plate, wherein a first surface of the deformable material is in contact with a surface of the rigid plate along its length, and wherein the deformable material includes a ceramic;

wherein a second surface of the deformable material, opposite the first surface, is configured to peripherally conform to only a top end portion of each of the multiple individual chips, irrespective of any difference in height among the multiple individual chips, to prevent each of the multiple individual chips from moving in a lateral direction, and to uniformly transfer a vertical force, applied to the rigid plate, to the multiple individual chips to bring, under pressure, a bonding surface of each individual chip into contact with a bonding surface of an element to which the multiple individual chips will be bonded during a connect-and-release cycle without causing damage to the multiple individual chips or the bonding surface.

2. The apparatus of claim 1, wherein the deformable material comprises aluminum oxide-based fibers.

3. The apparatus of claim 2, wherein the deformable material further comprises indentations, each of the indentations corresponding to one of the multiple individual chips.

4. The apparatus of claim 2, wherein the deformable material has a lifespan of at least two connect-and-release cycles.

5. The apparatus of claim 1, wherein the deformable material comprises a ceramic fiber reinforced material.

6. The apparatus of claim 1, wherein the deformable material comprises a composite material.

7. The apparatus of claim 1, wherein the composite material comprises fiber reinforcements.

8. The apparatus of claim 5, wherein the deformable material further comprises an alumina-based material.

9. The apparatus of claim 5, wherein the deformable material further comprises indentations, each of the indentations corresponding to one of the multiple individual chips.

10. The apparatus of claim 5, wherein the deformable material has a lifespan of at least two connect-and-release cycles.

11. The apparatus of claim 1, wherein the deformable material comprises a ceramic tape.

12. The apparatus of claim 1, wherein the deformable material is further configured to constrain the multiple individual chips during movement from a first location to a second location.

13. The apparatus of claim 1, wherein the deformable material comprises a porous deformable material.

14. The apparatus of claim 13, wherein the porous deformable material is configured to allow for application of a vacuum to the individual chips.

15. The apparatus of claim 1, wherein the deformable material is resistant to temperatures below 1000°

C.

21. The apparatus of claim 1, wherein there is substantially no space between the first surface of the deformable material and the rigid plate.

22. The apparatus of claim 1, wherein the first surface of the deformable material remains substantially flat.

16. A tooling system for a wafer bonding process, the system comprising:

a rigid plate; and

a membrane disposed on and in continuous contact with the rigid plate on a first side, wherein the membrane includes a deformable material that is configured to peripherally conform to only a top end portion of each of the plurality of chips on a second side, opposite the first side, irrespective of any difference in height among the plurality of chips, and further configured to prevent each of the plurality of chips from moving in a lateral direction;

wherein the membrane is further configured to uniformly transfer a vertical force from the rigid plate to the plurality of chips, and wherein the deformable material includes a ceramic.

17. The tooling system of claim 16, wherein the membrane comprises a reinforcement material, and wherein the reinforcement material comprises one of aluminum oxide-based fibers, a composite material, or a ceramic material.

18. The tooling system of claim 17, wherein the membrane further comprises indentations corresponding to the plurality of chips.

19. The tooling system of claim 16, wherein the membrane is further configured to allow for application of a vacuum to the plurality of chips.

20. The tooling system of claim 19, wherein the membrane comprises a porous portion.

23. The tooling system of claim 16, wherein there is substantially no space between the first side of the membrane and the rigid plate.

24. The tooling system of claim 16, wherein the first side of the membrane remains substantially flat.