Apparatus and method for electronic fuse with improved ESD tolerance
First Claim
Patent Images
1. A method of making an electronic fuse blow resistor structure, comprising:
- forming an insulator film;
depositing a layer of conductor directly on the insulator film;
after the depositing, etching the layer of conductor to form a plurality of spaced apart non-conductive regions and a plurality of spaced-apart conductive regions; and
forming a fuse resistor structure including fuse leads formed on top of respective ends of the conductive regions,wherein the non-conductive regions and the conductive regions are arranged on a same layer,wherein the conductive regions comprise conductive strips which direct current flow along discrete paths distributed across a top of the insulator film,wherein the fuse resistor structure changes in resistance based on a number of the conductive regions that are blown,wherein the insulator film comprises a polysilicon film,wherein the fuse resistor structure provides for resistance that undergoes step changes based on the number of the conductive regions that electrically fail, andwherein the insulator film comprising the polysilicon film satisfies;
V(a)2=(12goxTm/gldpdox)(1−
F(a))/(30−
F(a));
F(a)=tanh(α
(a−
w)/2)/tanh(α
a/2); and
α
2=rSigox/dpdox,where V is voltage, r is resistance, Tmis temperature of a metal, w is width of a line, “
a”
is a parameter of constriction of the line, gox is gate conductance, gl is film conductance, dp is a thickness of the polysilicon and dox is a thickness of an oxide.
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Abstract
Method of making an electronic fuse blow resistor structure. In one embodiment, the method includes forming an insulator film, depositing a conductor on the insulator film, and after the depositing, etching the conductor to form a plurality of spaced apart non-conductive regions and a plurality of spaced-apart conductive regions. In another embodiment, the method includes forming the insulator film, forming a conductive sheet, and sub-dividing the conductive sheet into the plurality of conductive regions.
50 Citations
22 Claims
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1. A method of making an electronic fuse blow resistor structure, comprising:
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forming an insulator film; depositing a layer of conductor directly on the insulator film; after the depositing, etching the layer of conductor to form a plurality of spaced apart non-conductive regions and a plurality of spaced-apart conductive regions; and forming a fuse resistor structure including fuse leads formed on top of respective ends of the conductive regions, wherein the non-conductive regions and the conductive regions are arranged on a same layer, wherein the conductive regions comprise conductive strips which direct current flow along discrete paths distributed across a top of the insulator film, wherein the fuse resistor structure changes in resistance based on a number of the conductive regions that are blown, wherein the insulator film comprises a polysilicon film, wherein the fuse resistor structure provides for resistance that undergoes step changes based on the number of the conductive regions that electrically fail, and wherein the insulator film comprising the polysilicon film satisfies;
V(a)2=(12goxTm/gldpdox)(1−
F(a))/(30−
F(a));
F(a)=tanh(α
(a−
w)/2)/tanh(α
a/2); and
α
2=rSigox/dpdox,where V is voltage, r is resistance, Tmis temperature of a metal, w is width of a line, “
a”
is a parameter of constriction of the line, gox is gate conductance, gl is film conductance, dp is a thickness of the polysilicon and dox is a thickness of an oxide. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A method of making an electronic fuse blow resistor structure comprising an insulating film and a plurality of spaced-apart conductive regions arranged on the insulating film, the method comprising:
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forming the insulator film; forming a conductive sheet; sub-dividing the conductive sheet into a single layer having a plurality of conductive regions and non-conductive regions, such that each non-conductive region is arranged between two adjacent conductive regions; and forming a fuse resistor structure including first and second fuse leads formed at respective ends of the conductive regions, wherein the first fuse lead contacts a respective first end of each of the plurality of conductive regions, and the second fuse lead contacts a respective second end of each of the plurality of conductive regions, wherein the insulator film supports the first and second fuse leads, wherein the conductive regions comprise conductive strips which direct current flow along discrete paths distributed across a top of the insulator film, wherein the fuse resistor structure changes in resistance based on a number of the conductive regions that are blown, wherein the fuse resistor structure provides for resistance that undergoes step changes based on the number of the conductive regions that electrically fail, wherein each non conductive region comprises a combination of a gas, a liquid, and a solid, wherein the insulator film comprises a polysilicon film, and wherein each of the plurality of conductive regions is formed directly on the polysilicon film. - View Dependent Claims (17, 18, 19, 20)
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21. A method of making an electronic fuse blow resistor structure, comprising:
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forming an insulator film; depositing a conductor layer over the insulator layer; after the depositing, etching the conductor layer to form alternating non-conductive and conductive regions arranged on a common layer, wherein each of the conductive regions is formed directly on the insulator film; and forming a first fuse lead in electrical communication with a first end of each of the conductive regions and a second fuse lead in electrical communication with a second end of each of the conductive regions, wherein the conductive regions are configured to provide digitized resistance and comprise conductive strips which direct current flow along discrete paths distributed across a top of the insulator film, the insulator film comprises a polysilicon film, the insulator film supports the first and second fuse leads, the fuse resistor structure provides for resistance that undergoes step changes based on the number of the conductive regions that electrically fail, each non conductive region comprises a combination of a gas, a liquid, and a solid, and the insulator film comprising the polysilicon film satisfies;
V(a)2=(12goxTm/gldpdox)(1−
F(a))/(30−
F(a));
F(a)=tanh(α
(a−
w)/2)/tanh(α
a/2); and
α
2=rSigox/dpdox,where V is voltage, r is resistance, Tm is temperature of a metal, w is width of a line, “
a”
is a parameter of constriction of the line, gox is gate conductance, gl is film conductance, dp is a thickness of the polysilicon and dox is a thickness of an oxide.
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22. A method of making an electronic fuse blow resistor structure comprising an insulating film and a plurality of spaced-apart conductive regions arranged on the insulating film, the method comprising:
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forming the insulator film; forming a conductive sheet; sub-dividing the conductive sheet into a single layer having a plurality of conductive regions and non-conductive regions, such that each non-conductive region is arranged between two adjacent conductive regions; and forming a fuse resistor structure including first and second fuse leads formed at respective ends of the conductive regions, wherein the first fuse lead contacts a respective first end of each of the plurality of conductive regions, and the second fuse lead contacts a respective second end of each of the plurality of conductive regions, wherein the insulator film supports the first and second fuse leads, wherein the conductive regions comprise conductive strips which direct current flow along discrete paths distributed across a top of the insulator film, wherein the fuse resistor structure changes in resistance based on a number of the conductive regions that are blown, wherein the fuse resistor structure provides for resistance that undergoes step changes based on the number of the conductive regions that electrically fail, wherein each non conductive region comprises a combination of a gas, a liquid, and a solid, wherein the insulator film comprises a polysilicon film, wherein each of the plurality of conductive regions is formed directly on the polysilicon film, and wherein the insulator film comprising the polysilicon film satisfies;
V(a)2=(12goxTm/gldpdox)(1−
F(a))/(30−
F(a));
F(a)=tanh(α
(a−
w)/2)/tanh(α
a/2); and
α
2=rSigox/dpdox,where V is voltage, r is resistance, Tm, is temperature of a metal, w is width of a line, “
a”
is a parameter of constriction of the line, gox is gate conductance, gl is film conductance, dp is a thickness of the polysilicon and dox is a thickness of an oxide.
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Specification