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SOI device having a substrate diode with process tolerant configuration and method of forming the SOI device

  • US 7,943,442 B2
  • Filed: 09/27/2007
  • Issued: 05/17/2011
  • Est. Priority Date: 01/31/2007
  • Status: Active Grant
First Claim
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1. A method, comprising:

  • forming a first opening and a second opening in a first device region of an SOI substrate while covering a second device region, said first and second openings extending through a buried insulating layer to a crystalline substrate material, said second device region having formed therein a first transistor and a second transistor each comprising an extension region;

    forming drain and source regions in said first transistor and a first doped region in said crystalline substrate material exposed by said first opening in a common first drain/source implantation process;

    forming drain and source regions in said second transistor and a second doped region in said crystalline substrate material exposed by said second opening in a common second drain/source implantation process;

    forming a first spacer element on sidewalls of said first and second openings after said common first and second drain/source implantation processes and performing a further common drain/source implantation process for said first opening and said first transistor and a further common drain/source implantation process for said second opening and said second transistor; and

    forming a metal silicide in said first and second transistors and said first and second doped regions.

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