Vertical floating body cell of a semiconductor device and method for fabricating the same
First Claim
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1. A method for fabricating a semiconductor device, the method comprising:
- forming a conductive pillar over a semiconductor substrate;
etching a portion of the conductive pillar and the semiconductor substrate to form a conductive tube;
forming an insulating film over an inner sidewall of the conductive tube;
forming a bias electrode connected to the semiconductor substrate to fill the conductive tube;
forming a gate insulating film over an outer surface of the conductive tube; and
forming a surrounding gate electrode over the gate insulating film.
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Abstract
A semiconductor device includes a tube-type channel formed over a semiconductor substrate. The tube-type channel is connected to first and second conductive lines. A bias electrode is formed in the tube-type channel. The bias electrode is connected to the semiconductor substrate. An insulating film is disposed between the tube-type channel and the bias electrode. A surrounding gate electrode is formed over the tube-type channel.
8 Citations
17 Claims
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1. A method for fabricating a semiconductor device, the method comprising:
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forming a conductive pillar over a semiconductor substrate; etching a portion of the conductive pillar and the semiconductor substrate to form a conductive tube; forming an insulating film over an inner sidewall of the conductive tube; forming a bias electrode connected to the semiconductor substrate to fill the conductive tube; forming a gate insulating film over an outer surface of the conductive tube; and forming a surrounding gate electrode over the gate insulating film. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A method for fabricating a semiconductor device, the method comprising:
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forming a conductive layer over the semiconductor substrate; forming a hard mask layer over the conductive layer; selectively etching the hard mask layer to form a hard mask pattern; forming a spacer over a sidewall of the hard mask pattern; selectively etching the conductive layer using the hard mask pattern and the spacer as an etching mask to form a conductive pillar; etching a portion of the conductive pillar and the semiconductor substrate to form a conductive tube, wherein a first conductive line is formed between the semiconductor substrate and the conductive tube; forming an insulating film over an inner sidewall of the conductive tube; forming a bias electrode connected to the semiconductor substrate to fill the conductive tube; forming a gate insulating film over an outer sidewall of the conductive tube; and forming a surrounding gate electrode over the gate insulating film. - View Dependent Claims (17)
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Specification