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Vertical floating body cell of a semiconductor device and method for fabricating the same

  • US 7,943,444 B2
  • Filed: 02/12/2010
  • Issued: 05/17/2011
  • Est. Priority Date: 07/27/2007
  • Status: Active Grant
First Claim
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1. A method for fabricating a semiconductor device, the method comprising:

  • forming a conductive pillar over a semiconductor substrate;

    etching a portion of the conductive pillar and the semiconductor substrate to form a conductive tube;

    forming an insulating film over an inner sidewall of the conductive tube;

    forming a bias electrode connected to the semiconductor substrate to fill the conductive tube;

    forming a gate insulating film over an outer surface of the conductive tube; and

    forming a surrounding gate electrode over the gate insulating film.

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